公开(公告)号：US5134091A

公开(公告)日：1992-07-28

申请号：US678434

申请日：1991-04-01

Applicant: Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

Inventor： Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

IPC: H01L21/368 ,  H01S5/34 ,  H01S5/347

CPC classification number: B82Y20/00 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02628 ,  H01L21/02661 ,  H01S5/3412 ,  H01S5/347 ,  Y10S438/962

Abstract: A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.

Abstract translation: 公开了一种量子有效装置及其制造方法，其中所述装置包括由半导体衬底和半导体衬底的表面上的化合物半导体构成的量子阱盒，该半导体衬底至少包括第一和第二元素组件和半导体覆层 所述量子阱盒和暴露的半导体衬底的表面部分，并且其中量子阱盒具有外延生长的单晶结构，其通过在半导体衬底的表面上沉积由第一元素组分构成的液相的微小液滴而被加热 然后加入与所述液滴中的第一元素成分不同的第二元素成分。

公开(公告)号：US5132247A

公开(公告)日：1992-07-21

申请号：US589921

申请日：1990-09-28

Applicant: Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

Inventor： Toyohiro Chikyou ,  Sinya Hashimoto ,  Satoshi Takahashi ,  Nobuyuki Koguchi

IPC: H01L21/208 ,  H01L21/20 ,  H01L29/06 ,  H01S5/00 ,  H01S5/34

CPC classification number: B82Y20/00 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02513 ,  H01L21/02628 ,  H01L21/02661 ,  H01S5/341 ,  Y10S438/962

Abstract: A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a first and a second elemental component and a semiconductor overlayer overlying said quantum well boxes and the surface portion of the exposed semiconductor substrate and wherein the quantum well boxes have an epitaxially grown single crystal structure obtained by depositing fine droplets of liquid phase composed of the first elemental component on the surface of the semiconductor substrate in the heated state and then incorporating a second elemental component different from the first elemental component in said droplets.