公开(公告)号：US11955773B2

公开(公告)日：2024-04-09

申请号：US16467719

申请日：2017-12-13

Applicant: Forschungsverbund Berlin e.V.

Inventor： Ivano Giuntoni ,  Lutz Geelhaar

IPC: H01S5/11 ,  H01S5/02 ,  H01S5/04 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/021 ,  H01S5/041 ,  H01S5/1021 ,  H01S5/1028 ,  H01S5/1042 ,  H01S5/1071 ,  H01S5/125 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/343 ,  H01S5/0208 ,  H01S5/101 ,  H01S2304/00

Abstract: The invention relates to a laser device (100) comprising a substrate (10), on the surface of which an optical waveguide (11) is arranged, which has an optical resonator (12, 13) with such a resonator length that at least one resonator mode forms a stationary wave in the resonator (12, 13), and an amplification medium that is arranged on a surface of the optical waveguide (11), wherein the amplification medium comprises a photonic crystal (20) having a plurality of column- and/or wall-shaped semiconductor elements (21) which are arranged periodically on the surface of the optical waveguide (11) while protruding from the optical waveguide (11), and wherein the photonic crystal (20) is designed to optically interact with the at least one resonator mode of the optical resonator (12, 13) and to amplify light having a wavelength of the at least one resonator mode of the optical resonator (12, 13). The invention also relates to methods for the operation and production of the laser device.

公开(公告)号：US20230361531A1

公开(公告)日：2023-11-09

申请号：US18335149

申请日：2023-06-15

Applicant: Phosertek Corporation

Inventor： Yu-Chen Chen ,  Chien-Hung Lin ,  Bo-Tsun Chou ,  Chih-Yuan Weng

IPC: H01S5/11 ,  H01S5/185 ,  H01S5/20 ,  H01S5/042 ,  H01S5/34

CPC classification number: H01S5/11 ,  H01S5/185 ,  H01S5/2018 ,  H01S5/0425 ,  H01S5/341 ,  H01S2301/17

Abstract: A laser device includes a first waveguiding layer, an active layer, a second waveguiding layer, a contact layer, a first insulating layer, a plurality of hole fillings, a first electrode, and a second electrode. The first waveguiding layer, the active layer, the second waveguiding layer, and the contact layer are stacked in sequence to form an epitaxy structure. The epitaxy structure has a first platform, the first platform has multiple holes to form a photonic crystal structure. The first insulating layer is over an upper surface and a sidewall surface of the first platform, wherein the first insulating layer has a first aperture corresponding to the photonic crystal structure. The hole fillings are respectively filled in the holes. The first electrode is over the photonic crystal structure. The second electrode is electrically connected to the first waveguiding layer.

公开(公告)号：US09871341B2

公开(公告)日：2018-01-16

申请号：US15156614

申请日：2016-05-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ning Li ,  Devendra K. Sadana ,  Jinghui Yang

IPC: H01S5/02 ,  H01S5/04 ,  H01S5/34

CPC classification number: H01S5/021 ,  H01L21/02381 ,  H01L21/02485 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02568 ,  H01S5/026 ,  H01S5/041 ,  H01S5/1032 ,  H01S5/1046 ,  H01S5/1071 ,  H01S5/34 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/341

Abstract: A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.

公开(公告)号：US20160365705A1

公开(公告)日：2016-12-15

申请号：US14737222

申请日：2015-06-11

Applicant: Sandia Corporation

Inventor： George T. Wang ,  Sheng Liu

IPC: H01S5/32 ,  H01S5/327 ,  H01S5/20 ,  H01S5/323

CPC classification number: H01S5/0607 ,  H01S5/0014 ,  H01S5/1042 ,  H01S5/32341 ,  H01S5/341

Abstract: A method for tuning the lasing wavelength of a semiconductor nano/microlaser uses mechanical strain to change the bandgap of the semiconductor material and the lasing wavelength. The method enables broad, dynamic, and reversible spectral tuning of single nano/microlasers with subnanometer resolution.

Abstract translation: 用于调整半导体纳米/微激光器的激光波长的方法使用机械应变来改变半导体材料的带隙和激光波长。 该方法能够实现具有亚纳米分辨率的单个纳米/微透镜的广泛，动态和可逆的光谱调谐。

公开(公告)号：US09130347B2

公开(公告)日：2015-09-08

申请号：US14071283

申请日：2013-11-04

Applicant: The Regents of the University of California

Inventor： Adam C. Scofield ,  Diana Huffaker

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/34 ,  H01S5/04

CPC classification number: H01S5/1042 ,  H01S5/041 ,  H01S5/105 ,  H01S5/341 ,  H01S2301/176

Abstract: A nanopillar photonic crystal laser includes a plurality of nanopillars and a support structure in contact with at least a portion of each of the nanopillars. Each nanopillar has an axial dimension and two mutually orthogonal cross dimensions. The axial dimension of each of the nanopillars is greater than the two mutually orthogonal cross dimensions, where there mutually orthogonal cross dimensions are less than about 1 μm and greater than about 1 nm. The support structure holds the plurality of nanopillars in preselected relative orientations and displacements relative to each other to form an array pattern that confines light of a preselected wavelength to a resonance region that intercepts at least one nanopillar of the plurality of nanopillars. The at least one nanopillar includes a lasing material to provide an output laser beam of light at the preselected wavelength.

Abstract translation: 纳米柱光子晶体激光器包括多个纳米柱和与每个纳米柱的至少一部分接触的支撑结构。 每个纳米柱具有轴向尺寸和两个相互正交的交叉尺寸。 每个纳米柱的轴向尺寸大于两个相互正交的交叉尺寸，其中相互正交的交叉尺寸小于约1μm并且大于约1nm。 支撑结构使多个纳米柱相对于彼此保持预选的相对取向和位移，以形成将预选波长的光限制在截取多个纳米柱的至少一个纳米柱的共振区域的阵列图案。 所述至少一个纳米柱包括激光材料，以提供预选波长的输出激光光束。

公开(公告)号：US09065253B2

公开(公告)日：2015-06-23

申请号：US12778857

申请日：2010-05-12

Applicant: Manjeri P. Anantram ,  Daryoush Shiri

Inventor： Manjeri P. Anantram ,  Daryoush Shiri

IPC: H01S5/00 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/06 ,  H01L33/18 ,  H01S5/022 ,  H01S5/04

CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01L33/18 ,  H01S5/02248 ,  H01S5/041 ,  H01S5/0607 ,  H01S5/0612 ,  H01S5/3403

Abstract: Strain modulated nanostructures for optoelectronic devices and associated systems and methods are disclosed. A semiconductor laser in accordance with one embodiment of the disclosure, for example, comprises an active region having a nanowire structure formed from a semiconductor material. The nanowire structure of the semiconductor material has a bandgap that is indirect in a first strain state. The laser further includes a straining unit coupled to the active region. The straining unit is configured to modulate the nanowire structure such that the nanowire structure reaches a second strain state in which the bandgap becomes direct or substantially direct and, in operation, emits photons upon electron-hole recombination.

Abstract translation: 公开了用于光电器件和相关系统和方法的应变调制纳米结构。 根据本公开的一个实施例的半导体激光器例如包括具有由半导体材料形成的纳米线结构的有源区。 半导体材料的纳米线结构具有在第一应变状态下是间接的带隙。 激光器还包括耦合到有源区域的应变单元。 应变单元被配置为调制纳米线结构，使得纳米线结构达到第二应变状态，其中带隙变得直接或基本上直接，并且在操作中，电子 - 空穴复合发射光子。

公开(公告)号：US09020005B2

公开(公告)日：2015-04-28

申请号：US14171231

申请日：2014-02-03

Applicant: Sandia Corporation

Inventor： Jeremy B. Wright ,  Igal Brener ,  Ganapathi S. Subramania ,  George T. Wang ,  Qiming Li

IPC: H01S5/00 ,  H01S5/187 ,  H01S5/18 ,  H01S5/183 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S5/42

CPC classification number: H01S5/187 ,  H01S5/10 ,  H01S5/105 ,  H01S5/1228 ,  H01S5/18 ,  H01S5/18319 ,  H01S5/341 ,  H01S5/3428 ,  H01S5/34333 ,  H01S5/42

Abstract: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Abstract translation: 多色光子晶体激光器阵列包括具有不同发射中心波长的单片生长增益部分的像素。 作为示例，使用新颖的自顶向下纳米线制造方法制造包括宽增益带宽III族氮化物多量子阱轴向异质结构的二维表面发射光子晶体激光器。 在具有60nm调谐（或标称中心波长的16％）的蓝紫色光谱区域中获得单模激光，其仅由光子晶体几何形状确定。 这种方法可以扩展到覆盖整个可见光谱。

公开(公告)号：US08787416B2

公开(公告)日：2014-07-22

申请号：US13518440

申请日：2010-09-10

Applicant: Sang Wuk Lee ,  Tae Won Kang ,  Gennady Panin ,  Hak Dong Cho

Inventor： Sang Wuk Lee ,  Tae Won Kang ,  Gennady Panin ,  Hak Dong Cho

IPC: H01S3/14 ,  H01S5/00

CPC classification number: H01S5/327 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/341

Abstract: Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.

Abstract translation: 提供了使用氧化锌纳米棒的激光二极管及其制造方法。 根据本公开的一个实施例的使用氧化锌纳米棒的激光二极管包括：晶片; 形成在晶片上的电极层; 包括在所述电极层上生长的多个n掺杂的氧化锌纳米棒的纳米棒层; 以及物理地与氧化锌纳米棒的端部接触的p掺杂单晶半导体层。

公开(公告)号：US08509276B2

公开(公告)日：2013-08-13

申请号：US13668248

申请日：2012-11-03

Applicant: The Regents of the University of California

Inventor： Xiang Zhang ,  Volker Jendrik Sorger ,  Rupert Francis Maximillian Oulton ,  Ren-Min Ma

IPC: H01S5/00

CPC classification number: H01S5/30 ,  B82Y20/00 ,  H01S5/0206 ,  H01S5/041 ,  H01S5/1046 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/341 ,  H01S5/4031

Abstract: Hybrid plasmonic waveguides are described that employ a high-gain semiconductor nanostructure functioning as a gain medium that is separated from a metal substrate surface by a nanoscale thickness thick low-index gap. The waveguides are capable of efficient generation of sub-wavelength high intensity light and have the potential for large modulation bandwidth >1 THz.

Abstract translation: 描述了采用高增益半导体纳米结构的混合等离子体波导，该高增益半导体纳米结构用作通过纳米级厚度厚的低折射率间隙从金属衬底表面分离的增益介质。 波导能够有效地产生亚波长高强度光，并且具有大于1THz的大调制带宽的潜力。

公开(公告)号：US08390005B2

公开(公告)日：2013-03-05

申请号：US12243105

申请日：2008-10-01

Applicant: Shih-Yuan Wang ,  Nobuhiko Kobayashi

Inventor： Shih-Yuan Wang ,  Nobuhiko Kobayashi

IPC: H01L33/00

CPC classification number: H01L33/20 ,  B82Y20/00 ,  H01L33/105 ,  H01L33/32 ,  H01S5/10 ,  H01S5/125 ,  H01S5/20 ,  H01S5/204 ,  H01S5/2045 ,  H01S5/341

Abstract: An optical emitter includes at least one nanowire connected in a circuit such that current selectively flows into the nanowire. The nanowire has a length-to-diameter ratio of ten or less. A method for generating optical emission includes applying a voltage across a nanowire to inject charge carriers into the nanowire, the nanowire having a length-to-diameter ratio of ten or less; and confining the charge carriers within the nanowire by placing a high bandgap material at each end of the nanowire, wherein the charge carriers recombine to emit optical energy.

Abstract translation: 光发射器包括在电路中连接的至少一个纳米线，使得电流选择性地流入纳米线。 纳米线的长径比为10以下。 一种用于产生光发射的方法包括在纳米线上施加电压以将电荷载流子注入到纳米线中，纳米线的长径比为10或更小; 并且通过在纳米线的每个端部放置高带隙材料来限制纳米线内的电荷载流子，其中电荷载流子复合以发射光能。