公开(公告)号：US08582248B2

公开(公告)日：2013-11-12

申请号：US12929198

申请日：2011-01-06

申请人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

发明人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

摘要翻译： MR传感器包括第一屏蔽层，第二屏蔽层，MR元件和夹在其间的一对硬磁体层，以及形成在MR元件的远离空气轴承表面的一侧的非磁性绝缘层 滑块 MR传感器还包括形成在第一屏蔽层和MR元件之间的第一非磁性导电层，并且第一非导电层嵌入第一屏蔽层中并与ABS分离。 本发明的MR传感器可以获得更窄的读取间隙，以提高分辨率和提高读取性能，并获得强的纵向偏置场以稳定MR传感器，从而增加总传感器面积，从而获得 提高可靠性和性能。 本发明还公开了一种磁头，HGA和盘驱动单元。

公开(公告)号：US08664950B2

公开(公告)日：2014-03-04

申请号：US13067887

申请日：2011-07-01

申请人： Siuman Mok ,  Hokei Lam ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Cheukman Lui ,  Chiuming Lueng

发明人： Siuman Mok ,  Hokei Lam ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Cheukman Lui ,  Chiuming Lueng

IPC分类号： G01R33/12

CPC分类号： G01R33/098

摘要： A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.

摘要翻译： 一种用于测量磁头的隧道磁阻传感器中的纵向偏置磁场的方法，所述方法包括以下步骤：将外部纵向时变磁场施加到隧道磁阻传感器上; 在外部纵向时变磁场的应用下，确定隧道磁阻传感器的屏蔽饱和度值; 将外部横向时变磁场和外部纵向直流磁场施加到隧道磁阻传感器上; 在外部横向时变磁场的应用和外部纵向直流磁场的不同场强值的应用中确定多个不同的输出幅度; 根据不同的输出幅度和不同的场强值绘制图形; 并根据曲线图和屏蔽饱和度值确定纵向偏置磁场的强度。

公开(公告)号：US20120249130A1

公开(公告)日：2012-10-04

申请号：US13067887

申请日：2011-07-01

申请人： Siuman MOK ,  Hokei LAM ,  Cheukwing LEUNG ,  Juren DING ,  Rongkwang NI ,  Wanyin KWAN ,  Cheukman LUI ,  Chiuming LUENG

发明人： Siuman MOK ,  Hokei LAM ,  Cheukwing LEUNG ,  Juren DING ,  Rongkwang NI ,  Wanyin KWAN ,  Cheukman LUI ,  Chiuming LUENG

IPC分类号： G01R33/18

CPC分类号： G01R33/098

摘要： A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.

摘要翻译： 一种用于测量磁头的隧道磁阻传感器中的纵向偏置磁场的方法，所述方法包括以下步骤：将外部纵向时变磁场施加到隧道磁阻传感器上; 在外部纵向时变磁场的应用下，确定隧道磁阻传感器的屏蔽饱和度值; 将外部横向时变磁场和外部纵向直流磁场施加到隧道磁阻传感器上; 在外部横向时变磁场的应用和外部纵向直流磁场的不同场强值的应用中确定多个不同的输出幅度; 根据不同的输出幅度和不同的场强值绘制图形; 并根据曲线图和屏蔽饱和度值确定纵向偏置磁场的强度。

公开(公告)号：US20120099227A1

公开(公告)日：2012-04-26

申请号：US12929198

申请日：2011-01-06

申请人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

发明人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

IPC分类号： G11B5/33 ,  G01R33/02 ,  G11B5/48

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

摘要翻译： MR传感器包括第一屏蔽层，第二屏蔽层，MR元件和夹在其间的一对硬磁体层，以及形成在MR元件的远离空气轴承表面的一侧的非磁性绝缘层 滑块 MR传感器还包括形成在第一屏蔽层和MR元件之间的第一非磁性导电层，并且第一非导电层嵌入第一屏蔽层中并与ABS分离。 本发明的MR传感器可以获得更窄的读取间隙，以提高分辨率和提高读取性能，并获得强的纵向偏置场以稳定MR传感器，从而增加总传感器面积，从而获得 提高可靠性和性能。 本发明还公开了一种磁头，HGA和盘驱动单元。