摘要:
A method of controlling a pre-charge process of a data line (21, 22) in an integrated circuit (100) comprises the step of monitoring a rate of change of a voltage applied to the data line (21, 22) for enhancing the security. Further a respective integrated circuit (100) is disclosed.
摘要:
The invention relates to a sensor, in particular for detecting attacks on at least one signal-carrying line (11), in particular of chip cards (1), said sensor having a circuit arrangement (10) which comprises a first circuit arrangement (13) for detecting an instantaneous voltage value above a first supply voltage and a second circuit arrangement (14) for detecting an instantaneous voltage value below a second supply voltage, wherein, when a voltage value outside the range between the first and second supply voltages is detected, a signal (19) is generated and can be taken as a basis for initiating a protective measure.
摘要:
The invention relates to a method and to a semiconductor device, comprising means for detecting an unauthorized access to the semiconductor device, wherein the semiconductor device carries out an initialization of the semiconductor device following detection of an unauthorized access, wherein an information item relating to the unauthorized access can be stored by the semiconductor device prior to the initialization, and wherein the stored information item relating to the unauthorized access remains intact following the initialization of the semiconductor device. It is advantageously provided that the stored information item remains intact for a predetermined period of time following disconnection of the semiconductor device from a power supply.
摘要:
In order to develop an electronic memory component or memory module (100), having at least one memory cell area (10) in which physical states (P) representing regular data are mapped by means of at least one mapping function (A) that describes at least one error correction code, for example at least one Hamming code, and also a method of operating at least one electronic memory component or memory module (100) of the abovementioned type, such that on the one hand the error detection probability is considerably increased and on the other hand unwritten memory blocks can be reliably distinguished from memory blocks that have already been written to once before, it is proposed that at least one further physical state in the form of at least one exceptional or special state (L, S) in the error correction code can be detected, encoded and/or indicated by means of the mapping function (A).
摘要:
A method of controlling a pre-charge process of a data line (21, 22) in an integrated circuit (100) comprises the step of monitoring a rate of change of a voltage applied to the data line (21, 22) for enhancing the security. Further a respective integrated circuit (100) is disclosed.
摘要:
In order to provide an error detection/correction circuit (100; 100′) as well as a method for detecting and/or for correcting at least one error of at least one data word, said data word comprising—information in the form of at least one information bit or at least one pay load data bit, and—redundancy in the form of at least one check bit or at least one redundant bit, wherein the number of the one or more check bits or redundant bits being supplemented to the respective data word is optimized, in particular wherein at least one physical memory space can be used in an optimized way depending on the requirements of the application, it is proposed—to perform at least one first error correction scheme being assigned to at least one first data path (30; 30′), and—to perform at least one second error correction scheme—being assigned to at least one second data path (40; 40), and—being designed for increasing the information and/or the redundancy, in particular—for increasing the number of the one or more information bits or of the one or more pay load data bits and/or—for increasing the number of the one or more check bits or of the one or more redundant bits, of the respective data word being transmitted through the second data path (40; 40).