公开(公告)号：US5482555A

公开(公告)日：1996-01-09

申请号：US234277

申请日：1994-04-28

申请人： Song J. Lee

发明人： Song J. Lee

IPC分类号： C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063

摘要： A liquid-phase epitaxy system having an LPE boat which consists of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by a proper temperature profile, since the solution for melt-etching and the remaining solution for the epitaxial growth are not deposited into the contact wells at the same time. This permits in-situ melt-etching and improvement in the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.

摘要翻译： 一种具有LPE船的液相外延系统，其由滑块部分，源保持部分和接触井部分组成，其中前两个接触井之间的距离与前两个源保持井之间的距离不同， 因此溶液的浓度可以通过适当的温度分布来控制，因为用于熔融蚀刻的溶液和用于外延生长的剩余溶液不会同时沉积到接触孔中。 这允许通过最小化衬底的熔融蚀刻表面的污染来原位熔融蚀刻和改善外延层的质量和外延产率。

公开(公告)号：US5362675A

公开(公告)日：1994-11-08

申请号：US995750

申请日：1992-12-24

申请人： Song J. Lee

发明人： Song J. Lee

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01L21/20

CPC分类号： H01S5/2232 ,  H01S2304/06 ,  H01S5/2235 ,  H01S5/4031

摘要： A manufacturing method of a laser diode and a laser diode array is disclosed. A current blocking layer is very thinly grown on the surface of a mesa-like structure provided in a semiconductor substrate due to certain growing characteristics when forming the current blocking layer on the surface of a semiconductor substrate. Therefore, a channel is formed by utilizing the characteristic that GaAs is etched faster than AlGaAs when melt-etched by an unsaturated melted source. A first cladding layer and epitaxial layers are subsequently formed. The channel is easily formed by melt-etching because the current blocking layer is thinly formed on the surface of a reverse mesa-like structure of the semiconductor substrate. Also, a desired operation mode is freely determinable by controlling the Al mole concentration of the current blocking layer. In manufacturing the laser diode and laser diode array, melt-etching for forming the current blocking layers is performed by one epitaxy step. Accordingly, the surface of a mesa-like structure on the substrate is protected from oxidation or defects after melt-etching, thereby improving the production yield and reliability of a given device.

摘要翻译： 公开了一种激光二极管和激光二极管阵列的制造方法。 当在半导体衬底的表面上形成电流阻挡层时，由于某些生长特性，电流阻挡层在半导体衬底中设置的台面状结构的表面上非常薄地生长。 因此，通过利用当通过不饱和熔融源进行熔融蚀刻时GaAs比AlGaAs蚀刻更快的特性形成沟道。 随后形成第一包层和外延层。 通过熔融蚀刻容易地形成通道，因为电流阻挡层被薄地形成在半导体衬底的反向台面状结构的表面上。 此外，通过控制电流阻挡层的Al摩尔浓度，可以自由确定期望的操作模式。 在制造激光二极管和激光二极管阵列时，通过一个外延步骤进行用于形成电流阻挡层的熔融蚀刻。 因此，在熔融蚀刻之后，保护基板上的台面状结构的表面免受氧化或缺陷，从而提高给定装置的产量和可靠性。

公开(公告)号：US5334278A

公开(公告)日：1994-08-02

申请号：US752856

申请日：1991-08-30

申请人： Song J. Lee

发明人： Song J. Lee

IPC分类号： C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063

摘要： The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time.Thus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.

摘要翻译： 具有LPE舟的液相外延系统由滑块部分，源支架部分和接触井部分组成，其中前两个接触井之间的距离与前两个源保持井之间的距离不同， 因此溶液的浓度可以通过适当的温度分布来控制，因为用于熔融蚀刻的溶液和用于外延生长的剩余溶液不会同时填充到接触孔中。 因此，本发明可以容易地进行原位熔融蚀刻，并且可以通过使衬底的熔融蚀刻表面的污染最小化来提高外延层的质量和外延产率。