公开(公告)号：US20170073839A1

公开(公告)日：2017-03-16

申请号：US15123556

申请日：2015-02-26

申请人： OSAKA UNIVERSITY ,  ITOCHU PLASTICS INC.

发明人： Yusuke MORI ,  Masashi YOSHIMURA ,  Mamoru IMADE ,  Masashi ISEMURA ,  Akira USUI ,  Masatomo SHIBATA ,  Takehiro YOSHIDA

IPC分类号： C30B29/40 ,  C30B19/06 ,  C30B25/18 ,  C30B25/20 ,  C30B33/00 ,  B28D5/00 ,  H01L21/78 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  C30B19/02 ,  H01L21/02

CPC分类号： C30B29/406 ,  B28D5/00 ,  C30B19/02 ,  C30B19/061 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3013 ,  H01S2304/06

摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。

公开(公告)号：US06272161B1

公开(公告)日：2001-08-07

申请号：US09248550

申请日：1999-02-08

申请人： Iuliah Basarab Petrescu-Prahova

发明人： Iuliah Basarab Petrescu-Prahova

IPC分类号： H01S516

CPC分类号： H01S5/164 ,  H01S5/20 ,  H01S5/2004 ,  H01S2304/06

摘要： Diode type laser devices (diode layers) with nonabsorbing windows that are obtained in low confinement asymmetric structures, that consist of a waveguide and an active region, the action region being situated asymmetrically relative to the waveguide, at an extremity of the waveguide central layer, outside, at the margin or inside the waveguide central layer. The nonabsorbing mirrors can be obtained by the partial etching of the diode lasers layered structures, by this etching the active region being removed but in a large extent the layered structure remaining unaffected, and by the regrowth of a material with an adequate crystalline structure and nonabsorbing for the radiation emitted by the laser. By such a process the optical properties of the waveguide are reconstructed in a large extent, so that the radiation propagates to the mirror into a waveguide similar with the waveguide of the rest of the laser.

摘要翻译： 具有非限制性不对称结构的非吸收窗口的二极管型激光器件（二极管层）由波导和有源区域组成，该作用区域在波导中心层的末端位于相对于波导的不对称位置， 外侧，边缘处或波导中心层内部。 非吸收镜可以通过二极管激光器分层结构的部分蚀刻来获得，通过这种蚀刻去除有源区域，但是在很大程度上保持不受影响的层状结构，以及具有足够的结晶结构和不吸收的材料的再生长 用于激光发射的辐射。 通过这样的处理，波导的光学特性在很大程度上重建，使得辐射传播到反射镜成为与激光的其余部分的波导类似的波导。

公开(公告)号：US6009113A

公开(公告)日：1999-12-28

申请号：US210564

申请日：1998-12-15

申请人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

发明人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

IPC分类号： H01L33/30 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32308 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/305 ,  H01S2304/06 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32316

摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

摘要翻译： 提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。 包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。 然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层， 存在于接触层中的电阻部分和载流子浓度低。 用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。

公开(公告)号：US20030005880A1

公开(公告)日：2003-01-09

申请号：US10156349

申请日：2002-05-28

发明人： Manijeh Razeghi

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  H01L021/311

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3216 ,  H01S5/3409 ,  H01S5/3425 ,  H01S5/343 ,  H01S5/3432 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

摘要： A method for making of an optoelectronic device and the device therefor comprising confinement layers, waveguides and active layers, all of which comprise a superlattice of binary III-V compounds.

公开(公告)号：US20020175324A1

公开(公告)日：2002-11-28

申请号：US10147017

申请日：2002-05-16

发明人： Manijeh Razeghi

IPC分类号： H01L029/06

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (Xnull0null1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

公开(公告)号：US06459096B1

公开(公告)日：2002-10-01

申请号：US09526134

申请日：2000-03-15

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

公开(公告)号：US5707892A

公开(公告)日：1998-01-13

申请号：US560714

申请日：1995-11-20

申请人： Tae Kyung Yoo ,  Meoung Whan Cho ,  Ju Ok Seo ,  Shi Jong Leem ,  Min Soo Noh

发明人： Tae Kyung Yoo ,  Meoung Whan Cho ,  Ju Ok Seo ,  Shi Jong Leem ,  Min Soo Noh

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01L21/20

CPC分类号： H01S5/227 ,  H01S5/164 ,  H01S2304/06 ,  H01S5/22 ,  H01S5/2275

摘要： A method for fabricating a semiconductor laser diode includes the steps of forming a double hetero structured semiconductor layer on a substrate, forming a dielectric layer on the double hetero structured semiconductor layer, selectively etching the dielectric layer to expose a portion of the double hetero structured semiconductor layer, selectively removing the exposed semiconductor layer using the dielectric layer as a mask by liquid phase etching, and re growing a semiconductor layer on the etched portion by liquid phase epitaxy.

摘要翻译： 一种制造半导体激光二极管的方法包括以下步骤：在衬底上形成双异质结构半导体层，在双异质结构半导体层上形成电介质层，选择性地蚀刻电介质层以暴露双异质结构半导体的一部分 层，通过液相蚀刻使用电介质层作为掩模选择性地去除暴露的半导体层，并且通过液相外延再生长在蚀刻部分上的半导体层。

公开(公告)号：US06605485B2

公开(公告)日：2003-08-12

申请号：US10147017

申请日：2002-05-16

申请人： Manijeh Razeghi

发明人： Manijeh Razeghi

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

公开(公告)号：US5932004A

公开(公告)日：1999-08-03

申请号：US861762

申请日：1997-05-22

申请人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

发明人： Taiji Morimoto ,  Zenkichi Shibata ,  Takashi Ishizumi ,  Keisuke Miyazaki ,  Toshio Hata ,  Yoshinori Ohitsu

IPC分类号： H01S5/00 ,  H01L33/30 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  C30B19/06

CPC分类号： H01S5/305 ,  H01L33/305 ,  H01S5/0421 ,  H01S5/32308 ,  H01S2304/06 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32316

摘要： A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.

摘要翻译： 提供了具有高性能，低工作电压和长使用寿命的半导体激光器件及其制造方法。 包括用于激光束振荡的有源层的半导体多层膜堆叠在基板上。 然后，通过LPE生长法生长由掺杂有p型杂质Mg的p型AlGaAs构成的包层和由Mg掺杂的由p型GaAs构成的接触层， 存在于接触层中的电阻部分和载流子浓度低。 用于激光束振荡的有源层被布置在发射激光束的端面的大致中心。

公开(公告)号：US5362675A

公开(公告)日：1994-11-08

申请号：US995750

申请日：1992-12-24

申请人： Song J. Lee

发明人： Song J. Lee

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/40 ,  H01L21/20

CPC分类号： H01S5/2232 ,  H01S2304/06 ,  H01S5/2235 ,  H01S5/4031

摘要： A manufacturing method of a laser diode and a laser diode array is disclosed. A current blocking layer is very thinly grown on the surface of a mesa-like structure provided in a semiconductor substrate due to certain growing characteristics when forming the current blocking layer on the surface of a semiconductor substrate. Therefore, a channel is formed by utilizing the characteristic that GaAs is etched faster than AlGaAs when melt-etched by an unsaturated melted source. A first cladding layer and epitaxial layers are subsequently formed. The channel is easily formed by melt-etching because the current blocking layer is thinly formed on the surface of a reverse mesa-like structure of the semiconductor substrate. Also, a desired operation mode is freely determinable by controlling the Al mole concentration of the current blocking layer. In manufacturing the laser diode and laser diode array, melt-etching for forming the current blocking layers is performed by one epitaxy step. Accordingly, the surface of a mesa-like structure on the substrate is protected from oxidation or defects after melt-etching, thereby improving the production yield and reliability of a given device.

摘要翻译： 公开了一种激光二极管和激光二极管阵列的制造方法。 当在半导体衬底的表面上形成电流阻挡层时，由于某些生长特性，电流阻挡层在半导体衬底中设置的台面状结构的表面上非常薄地生长。 因此，通过利用当通过不饱和熔融源进行熔融蚀刻时GaAs比AlGaAs蚀刻更快的特性形成沟道。 随后形成第一包层和外延层。 通过熔融蚀刻容易地形成通道，因为电流阻挡层被薄地形成在半导体衬底的反向台面状结构的表面上。 此外，通过控制电流阻挡层的Al摩尔浓度，可以自由确定期望的操作模式。 在制造激光二极管和激光二极管阵列时，通过一个外延步骤进行用于形成电流阻挡层的熔融蚀刻。 因此，在熔融蚀刻之后，保护基板上的台面状结构的表面免受氧化或缺陷，从而提高给定装置的产量和可靠性。