公开(公告)号：US06448105B1

公开(公告)日：2002-09-10

申请号：US09647046

申请日：2000-11-22

申请人： Steffen Sterk

发明人： Steffen Sterk

IPC分类号： H01L2100

CPC分类号： H01L31/1804 ,  H01L21/2256 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/923

摘要： A method for doping one side of a semiconductor substrate, such as in a silicon wafer, wherein an oxide layer is deposited on both the side to be doped and the non-doped side of the semiconductor substrate. A doping layer, containing a doping agent, is deposited onto the oxide layer on the side to be doped. The doping agent passes through the oxide layer on the side to be doped and into the semiconductor substrate. The oxide layer on the non-doped side serves as a protective layer, preventing diffusion of the doping agent into the undoped side of the substrate.

摘要翻译： 一种用于掺杂半导体衬底的一侧的方法，例如在硅晶片中，其中氧化物层沉积在半导体衬底的待掺杂侧和非掺杂侧。 含有掺杂剂的掺杂层沉积在待掺杂侧的氧化物层上。 掺杂剂通过待掺杂侧的氧化物层进入半导体衬底。 非掺杂侧的氧化物层用作保护层，防止掺杂剂扩散到衬底的未掺杂侧。