Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
    1.
    发明申请
    Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates 有权
    通过气相化学渗透薄化多孔基板的致密化方法和装载这种基板的装置

    公开(公告)号:US20080152803A1

    公开(公告)日:2008-06-26

    申请号:US11884597

    申请日:2006-02-16

    CPC classification number: C23C16/045 C23C16/45578 C23C16/4587

    Abstract: To densify thin porous substrates (1) by chemical vapor infiltration, the invention proposes using loading tooling (10) comprising a tubular duct (10) disposed between first and second plates (12, 13) and around which the thin substrates for densification are disposed radially. The tooling as loaded in this way is then placed inside a reaction chamber (20) in an infiltration oven having a reactive gas admission inlet (21) connected to the tubular duct (11) to enable a reactive gas to be admitted into the duct which distributes the gas along the main faces on the substrates (1) in a flow direction that is essentially radial. The reactive gas can also flow in the opposite direction, i.e. it can be admitted into the tooling (10) from its outer envelope (16) and can be removed via the duct (11).

    Abstract translation: 为了通过化学气相渗透致密化多孔基底(1),本发明提出使用装载工具(10),其包括设置在第一和第二板(12,13)之间的管状管道(10),并且用于致密化的薄基底 径向地 然后以这种方式装载的工具然后放置在具有连接到管状管道(11)的反应气体进入入口(21)的浸入式烘箱中的反应室(20)内,以使反应气体能够进入管道 沿着基本上径向的流动方向沿着基板(1)上的主面分布气体。 反应气体也可以在相反的方向上流动,即可以从其外壳(16)进入工具(10),并且可以经由管道(11)移除。

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