公开(公告)号：US20220267924A1

公开(公告)日：2022-08-25

申请号：US17552524

申请日：2021-12-16

申请人： Stephen T. Schaefer ,  Marko S. Milosavljevic ,  Rajeev Reddy Kosireddy ,  Shane R. Johnson

发明人： Stephen T. Schaefer ,  Marko S. Milosavljevic ,  Rajeev Reddy Kosireddy ,  Shane R. Johnson

IPC分类号： C30B23/02 ,  C22C28/00 ,  C30B29/52 ,  C23C14/22 ,  C23C14/14 ,  C23C14/54

摘要： The invention relates in part to a growth model for the growth of Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE) based on the kinetics of adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of the Group V elements. The invention also relates to methods to optimize MBE growth conditions used to produce a target III-V alloy composition. The invention is further related to methods of predicting III-V alloy compositions resulting from a set of MBE growth conditions.