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公开(公告)号：US20220267924A1
公开(公告)日：2022-08-25
申请号：US17552524
申请日：2021-12-16
摘要： The invention relates in part to a growth model for the growth of Group III-Group V (III-V) alloys by molecular beam epitaxy (MBE) based on the kinetics of adsorption, desorption, incorporation, anion exchange, anion-assisted removal, and surface droplet accumulation of the Group V elements. The invention also relates to methods to optimize MBE growth conditions used to produce a target III-V alloy composition. The invention is further related to methods of predicting III-V alloy compositions resulting from a set of MBE growth conditions.
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2.发明授权Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap 失效用于测量具有温度依赖带隙的衬底材料的温度的光学装置和方法
公开(公告)号：US5388909A
公开(公告)日：1995-02-14
申请号：US121521
申请日：1993-09-16
CPC分类号： G01K11/14
摘要： An optical method and apparatus for measuring the temperature of a substrate material with a temperature dependent bandgap. The substrate is illuminated with a broad spectrum lamp and the bandgap is determined from the spectrum of the diffusely scattered light. The spectrum of the light from the lamp is sufficiently broad that it covers the spectral range above and below the bandgap of the substrate. Wavelengths corresponding to photon energies less than the bandgap of the substrate are transmitted through the substrate and are reflected from the back surface of the substrate as well as from the front surface while the wavelengths corresponding to photon energies larger than the bandgap are reflected only from the front surface. If the front surface is polished the front surface reflection will be specular while if the back surface is rough the reflection from the back surface will be non-specular. The back surface reflection is detected with a detector in a non-specular location. From the wavelength of the onset of the non-specular reflection the bandgap can be determined which gives the temperature. The temperature is determined from the knee in the diffuse reflectance spectrum near the bandgap.
摘要翻译： 一种用于测量具有温度依赖带隙的衬底材料的温度的光学方法和装置。 用广谱灯照射衬底，并从扩散散射光的光谱确定带隙。 来自灯的光的光谱足够宽，以使其覆盖在衬底的带隙之上和之下的光谱范围。 对应于小于衬底的带隙的光子能量的波长透射通过衬底，并且从衬底的背面以及从正面反射，而对应于大于带隙的光子能量的波长仅从 前面 如果前表面被抛光，则前表面反射将是镜面的，而如果背面粗糙，则背面的反射将是非镜面的。 用非镜面位置的检测器检测背面反射。 从非镜面反射的起始波长可以确定给出温度的带隙。 在带隙附近的漫反射光谱中，从膝盖确定温度。
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3.发明授权Method for determining the temperature of semiconductor substrates from bandgap spectra 失效从带隙光谱确定半导体衬底的温度的方法
公开(公告)号：US6116779A
公开(公告)日：2000-09-12
申请号：US814599
申请日：1997-03-10
申请人： Shane R. Johnson , J. Thomas Tiedje
发明人： Shane R. Johnson , J. Thomas Tiedje
CPC分类号： G01K11/14
摘要： An optical method for measuring the temperature of a substrate material with a temperature dependent band edge. In this method both the position and the width of the knee of the band edge spectrum of the substrate are used to determine temperature. The width of the knee is used to correct for the spurious shifts in the position of the knee caused by: (i) thin film interference in a deposited layer on the substrate; (ii) anisotropic scattering at the back of the substrate; (iii) the spectral variation in the absorptance of deposited layers that absorb in the vicinity of the band edge of the substrate; and (iv) the spectral dependence in the optical response of the wavelength selective detection system used to obtain the band edge spectrum of the substrate. The adjusted position of the knee is used to calculate the substrate temperature from a predetermined calibration curve. This algorithm is suitable for real-time applications as the information needed to correct the knee position is obtained from the spectrum itself. Using a model for the temperature dependent shape of the absorption edge in GaAs and InP, the effect of substrate thickness and the optical geometry of the method used to determine the band edge spectrum, are incorporated into the calibration curve.
摘要翻译： 一种用于测量具有温度依赖带边缘的衬底材料的温度的光学方法。 在该方法中，使用衬底的带边缘光谱的膝盖的位置和宽度来确定温度。 膝盖的宽度用于校正由于以下原因引起的膝盖位置的杂散位移：（i）基底上沉积层中的薄膜干扰; （ii）衬底背面的各向异性散射; （iii）在衬底的带边缘附近吸收的沉积层的吸收率的光谱变化; 和（iv）用于获得衬底的带边缘光谱的波长选择性检测系统的光学响应中的光谱依赖性。 使用膝部的调整位置从预定的校准曲线计算衬底温度。 该算法适用于实时应用，因为从频谱本身获得了修正膝盖位置所需的信息。 在GaAs和InP中使用吸收边缘的温度依赖形状的模型，将基板厚度和用于确定带边缘光谱的方法的光学几何形状的影响结合到校准曲线中。
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4.发明授权Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap 失效用于测量具有温度依赖带隙的衬底材料的温度的光学装置和方法
公开(公告)号：US5568978A
公开(公告)日：1996-10-29
申请号：US343097
申请日：1994-11-21
CPC分类号： G01K11/14
摘要： An optical method for measuring the temperature of a substrate material with a temperature dependent bandgap. The substrate is illuminated with a broad spectrum lamp and the bandgap is determined from the spectrum of the diffusely scattered light. The spectrum of the light from the lamp is sufficiently broad that it covers the spectral range above and below the bandgap of the substrate. Wavelengths corresponding to photon energies less than the bandgap of the substrate are transmitted through the substrate and are reflected from the back surface of the substrate as well as from the front surface while the wavelengths corresponding to photon energies larger than the bandgap are reflected only from the front surface. If the front surface is polished the front surface reflection will be specular while if the back surface is rough the reflection from the back surface will be non-specular. The back surface reflection is detected with a detector in a non-specular location. From the wavelength of the onset of the non-specular reflection the bandgap can be determined which gives the temperature. The temperature is determined from the knee in the diffuse reflectance spectrum near the bandgap.
摘要翻译： 一种用于测量具有温度依赖带隙的衬底材料的温度的光学方法。 用广谱灯照射衬底，并从扩散散射光的光谱确定带隙。 来自灯的光的光谱足够宽，以使其覆盖在衬底的带隙之上和之下的光谱范围。 对应于小于衬底的带隙的光子能量的波长透射通过衬底，并且从衬底的背面以及从正面反射，而对应于大于带隙的光子能量的波长仅从 前面 如果前表面被抛光，则前表面反射将是镜面的，而如果背面粗糙，则背面的反射将是非镜面的。 用非镜面位置的检测器检测背面反射。 从非镜面反射的起始波长可以确定给出温度的带隙。 在带隙附近的漫反射光谱中，从膝盖确定温度。
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5.发明授权Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy 有权用于使用镜面反射光谱测量晶片的温度的装置公开(公告)号：US07234862B2
公开(公告)日：2007-06-26
申请号：US10398652
申请日：2001-10-12
CPC分类号： G01K11/125 , G01K11/00
摘要： An apparatus (295) using specular reflection spectroscopy to measure a temperature of a substrate (135). By reflecting light (100) from a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the substrate. This in situ apparatus can be used as a feedback control in combination with a variable temperature substrate holder to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites, the variation of the temperature across the substrate can also be measured.
摘要翻译： 一种使用镜面反射光谱测量基板（135）的温度的装置（295）。 通过从衬底反射光（100），可以使用衬底的带边特性来确定衬底的温度。 该原位装置可以用作与可变温度衬底保持器组合的反馈控制，以更精确地控制衬底的处理条件。 通过利用多个测量点，也可以测量跨衬底温度的变化。
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