公开(公告)号：US07700488B2

公开(公告)日：2010-04-20

申请号：US11623354

申请日：2007-01-16

Applicant: Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

Inventor： Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/02032 ,  H01L21/02013

Abstract: A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes removing the dopant layer from the semiconductor wafer. No chemical etching is performed on the dopant layer before said removing the dopant layer is performed.

Abstract translation: 晶圆加工方法。 该方法包括提供半导体晶片。 半导体晶片包括（i）半导体层和（ii）半导体层顶部上的掺杂剂层。 掺杂层包括掺杂剂。 该方法还包括从半导体晶片去除掺杂剂层。 在执行所述去除掺杂剂层之前，不对掺杂剂层进行化学蚀刻。

公开(公告)号：US07732303B2

公开(公告)日：2010-06-08

申请号：US12023224

申请日：2008-01-31

Applicant: Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

Inventor： Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

IPC: H01L21/322

CPC classification number: H01L21/26513 ,  H01L21/02032

Abstract: A method of recycling monitor wafers. The method includes: (a) providing a semiconductor wafer which includes a dopant layer extending from a top surface of the wafer into the wafer a distance less than a thickness of the wafer, the dopant layer containing dopant species; after (a), (b) attaching an adhesive tape to a bottom surface of the wafer; after (b), (c) removing the dopant layer; and after (c), (d) removing the adhesive tape.

Abstract translation: 监测晶圆回收方法。 该方法包括：（a）提供半导体晶片，其包括掺杂剂层，该掺杂剂层从晶片的顶表面延伸到晶片的距离小于晶片的厚度，所述掺杂剂层含有掺杂剂物质; （a）之后，（b）将粘合带附着在晶片的底面上; （b）之后，（c）去除掺杂剂层; （c）之后，（d）去除胶带。

公开(公告)号：US20080171439A1

公开(公告)日：2008-07-17

申请号：US11623354

申请日：2007-01-16

Applicant: Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

Inventor： Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

IPC: H01L21/302

CPC classification number: H01L21/02032 ,  H01L21/02013

Abstract: A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes removing the dopant layer from the semiconductor wafer. No chemical etching is performed on the dopant layer before said removing the dopant layer is performed.

Abstract translation: 晶圆加工方法。 该方法包括提供半导体晶片。 半导体晶片包括（i）半导体层和（ii）半导体层顶部上的掺杂剂层。 掺杂层包括掺杂剂。 该方法还包括从半导体晶片去除掺杂剂层。 在执行所述去除掺杂剂层之前，不对掺杂剂层进行化学蚀刻。

公开(公告)号：US20090197400A1

公开(公告)日：2009-08-06

申请号：US12023224

申请日：2008-01-31

Applicant: Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

Inventor： Steven Ross Codding ,  Joseph R. Greco ,  Timothy Charles Krywanczyk

IPC: H01L21/22

CPC classification number: H01L21/26513 ,  H01L21/02032

Abstract: A method of recycling monitor wafers. The method includes: (a) providing a semiconductor wafer which includes a dopant layer extending from a top surface of the wafer into the wafer a distance less than a thickness of the wafer, the dopant layer containing dopant species; after (a), (b) attaching an adhesive tape to a bottom surface of the wafer; after (b), (c) removing the dopant layer; and after (c), (d) removing the adhesive tape.

Abstract translation: 监测晶圆回收方法。 该方法包括：（a）提供半导体晶片，其包括掺杂剂层，该掺杂剂层从晶片的顶表面延伸到晶片的距离小于晶片的厚度，所述掺杂剂层含有掺杂剂物质; （a）之后，（b）将粘合带附着在晶片的底面上; （b）之后，（c）去除掺杂剂层; （c）之后，（d）去除胶带。