公开(公告)号：US06576507B1

公开(公告)日：2003-06-10

申请号：US09712510

申请日：2000-11-14

申请人： Kenneth A. Bandy ,  Stuart D. Cheney ,  Gary L. Milo ,  Yutong Wu

发明人： Kenneth A. Bandy ,  Stuart D. Cheney ,  Gary L. Milo ,  Yutong Wu

IPC分类号： H01L218249

CPC分类号： H01L21/8249

摘要： The present invention is intended for use on BiCMOS technology where the BJTs are formed after the FETs. A thin FET protection layer 26 is deposited on the raised and recessed regions 28 of the semiconductor substrate 10. A selectively removable filler layer 30 is then deposited on the FET protection layer 26 with a thickness to over-fill the recessed regions 28 of the gates 24 of the FETs. The selectively removable filler layer 30 is then planarized until the FET protection layer 26 on top of the gates 24 is exposed. The recessed regions 28 between the gates 24 are left substantially filled with selectively removable filler layer 30. The selectively removable filler layer 30 in the region where the BJT is formed is patterned and an opening 32 is made to allow for the depositing of layers of different materials 34, 36, 38, 40, 42, 44 used in the construction of the BJT. The layer of different materials 34, 36, 38, 40, 42, 44 are processed by methods known in the art to form polysilicon emitter 46 of the BJT. Due to selectively removable filler layer 30 creating a substantially planar surface in the recessed regions 28 of the FETs, little to none of the layers of different materials 34, 36, 38, 40, 42, 44 that are used in the construction of the BJT are deposited within the recessed regions 28. Thus, removal of the layers of different materials 34, 36, 38, 40 (40′), 42, 44 from the FET region is simplified. After removal of the layers of different materials 34, 36, 38, 40 (40′), 42, 44 from the FET region, the selectively removable filler layer 30 is removed selectively to the FET protection layer 26. The FET protection layer 26 is then removed. The recessed regions 28 between the gates 24 of the FETs are free from residual films.

摘要翻译： 本发明旨在用于在FET之后形成BJT的BiCMOS技术。 薄的FET保护层26沉积在半导体衬底10的凸起和凹陷区域28上。然后，可选择地移除的填充层30沉积在FET保护层26上，其厚度足以使栅极的凹陷区域28过度填充 24个FET。 然后可选择性地移除的填充层30被平坦化，直到露出栅极24顶部的FET保护层26为止。 门24之间的凹陷区域28基本上被可选择地移除的填充层30填充。形成BJT的区域中的可选择性地移除的填充层30被图案化并且形成开口32以允许沉积不同的层 用于建造BJT的材料34,36,38,40,42,44。 通过本领域已知的方法来处理不同材料层34,36,38,40,42,44的层以形成BJT的多晶硅发射器46。 由于选择性地可移除的填充层30在FET的凹陷区域28中产生基本平坦的表面，所以在BJT的构造中使用的不同材料34,36,38,40,42,44的层几乎不下降 沉积在凹陷区域28内。因此，从FET区域去除不同材料层34,36,38,40（40'），42,44的层被简化。 在从FET区域去除不同材料34,36,38,40（40'），42,44的层之后，可选择地移除的填充层30被选择性地去除到FET保护层26.FET保护层26是 然后删除。 FET的栅极24之间的凹陷区域28没有残留的膜。

公开(公告)号：US06793561B2

公开(公告)日：2004-09-21

申请号：US09948165

申请日：2001-09-06

申请人： David P. Bachand ,  Stuart D. Cheney ,  Harman S. Garvatt ,  Charles A. McKinney

发明人： David P. Bachand ,  Stuart D. Cheney ,  Harman S. Garvatt ,  Charles A. McKinney

IPC分类号： B24B5300

CPC分类号： B24B37/14 ,  B24B37/013

摘要： The present invention comprises a chemical mechanical polishing tool comprising a polishing platen and a removable, replaceable platen top mounted on a top surface of the platen. Preferably, the platen top comprises a material substantially impervious to the slurries used when planarizing an object. Most preferably, the platen top comprises aluminum alloy or glass. The platen top may be tailored to provide enhanced polishing conditions by acting as an insulator, a conductor or machined to be concave or convex. The invention may further include endpoint sensors attached to the platen top.

摘要翻译： 本发明包括一种化学机械抛光工具，其包括抛光压板和安装在压板的顶表面上的可移除的可替换的压板顶板。 优选地，压板顶部包括当平坦化物体时使用的浆料基本上不可渗透的材料。 最优选地，压板顶部包括铝合金或玻璃。 压板顶部可以被调整为通过充当绝缘体，导体或机械加工成凹凸的方式提供增强的抛光条件。 本发明还可以包括附接到压板顶部的端点传感器。

公开(公告)号：US06186873B1

公开(公告)日：2001-02-13

申请号：US09550079

申请日：2000-04-14

申请人： Kent R. Becker ,  Stuart D. Cheney ,  Scott R. Cline ,  Paul A. Manfredi ,  Eric J. White

发明人： Kent R. Becker ,  Stuart D. Cheney ,  Scott R. Cline ,  Paul A. Manfredi ,  Eric J. White

IPC分类号： B24B100

CPC分类号： H01L21/67046 ,  B08B1/00 ,  B24B9/065

摘要： In a chemical mechanical polishing process for planarization of semiconductor wafers, a pair of opposed grippers are used to move the wafer from one station to another. During this movement, the wafer is rotated and brushes along the periphery are placed in contact with the edge of the wafer to remove foreign material and residue which builds up along the edge of the wafer. Cleaning fluid may be introduced to flush away and/or breakup the residue buildup.

摘要翻译： 在用于半导体晶片的平坦化的化学机械抛光工艺中，使用一对相对的夹持器将晶片从一个工位移动到另一个工位。 在此运动期间，晶片旋转，并且沿着周边的刷子被放置成与晶片的边缘接触以去除沿着晶片边缘积聚的异物和残留物。 可以引入清洗液以冲洗和/或分解残留物积聚。