公开(公告)号：US4950621A

公开(公告)日：1990-08-21

申请号：US795447

申请日：1985-11-06

Applicant: Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

Inventor： Stuart J. Irvine ,  John B. Mullin ,  Jean Giess

IPC: C30B25/02 ,  C30B25/10 ,  C30B29/40 ,  C30B29/48 ,  H01L21/365

CPC classification number: C30B25/02 ,  C30B25/105 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/048 ,  Y10S148/064 ,  Y10S148/094

Abstract: A method of growing an epitaxial crystalline layer on a substrate which comprises the steps of(a) providing in the reaction zone of a reaction vessel a heated substrate(b) establishing a gas stream, provided by a carrier gas which gas stream comprises at least 50% by volume of a gas which suppresses the homogeneous nucleation of particles in the vapor phase which contains, in the vapor phase, at least one alkyl of an element selected from Group 15 and Group 16 of the Periodic Table,(c) passing the gas stream through the reaction zone into contact with the heated substrate, and(d) irradiating at least a major part of the surface of the substrate with electromagnetic radiation to provide photolytic decomposition of the at least one alkyl and consequential epitaxial deposition of the layer containing the said element across at least a major part of the surface of the substrate.

Abstract translation: 一种在衬底上生长外延晶体层的方法，其包括以下步骤：（a）在反应区的反应区中提供加热衬底（b），建立由载气提供的气流，该气流至少包括 50体积％的气体，其抑制在汽相中含有至少一种选自元素周期表第15族和第16族的元素的至少一种烷基的气相中颗粒的均匀成核，（c）使 通过反应区的气流与加热的基底接触，以及（d）用电磁辐射照射基底的表面的至少大部分，以提供含有至少一种烷基和伴随的外延沉积的层的光解分解 所述元件穿过衬底表面的至少大部分。