摘要:
A subterranean survey system includes a sensor string having a communications link and a plurality of survey sensors connected to the communications link. The sensor string has a loop connection to provide communications redundancy, and the survey sensors are used to detect signals affected by a subterranean structure. A first router is connected to the sensor string, and a transport network is connected to the first router. The first router communicates data from the survey sensors over the transport network.
摘要:
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.
摘要:
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
摘要:
Information from a network of seismic device is received, and a geographic representation of the network of seismic devices is generated. The geographic representation contains information regarding the seismic devices.
摘要:
A subterranean survey system includes a sensor string having a communications link and a plurality of survey sensors connected to the communications link. The sensor string has a loop connection to provide communications redundancy, and the survey sensors are used to detect signals affected by a subterranean structure. A first router is connected to the sensor string, and a transport network is connected to the first router. The first router communicates data from the survey sensors over the transport network.
摘要:
Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of alkaline earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.
摘要:
Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.