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公开(公告)号：US20080032895A1
公开(公告)日：2008-02-07
申请号：US11717596
申请日：2007-03-12
Applicant: Robert Hammond , Jonathan Sun , Douglas Scalapino , Timothy James , Lincoln Bourne
Inventor： Robert Hammond , Jonathan Sun , Douglas Scalapino , Timothy James , Lincoln Bourne
IPC: H01P7/00
CPC classification number: H01G4/008 , G01R33/34007 , G01R33/34023 , G01R33/34053 , G01R33/341 , G01R33/3642 , G01R33/3671 , H01F6/06 , H01P1/203 , H01P7/08 , H01P7/088 , H01Q1/364 , H03K17/78 , H03K17/92 , H03K2217/0036
Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.
Abstract translation: 调谐高温超导体（HTS）谐振器的方法包括提供HTS电感器和HTS电容器的步骤，HTS电容器电连接到HTS电感器。 调谐体靠近HTS电感和HTS电容。 改变调谐体相对于HTS电感器和HTS电容器的相对位置，以调谐谐振器。 提供了包括具有平坦表面的基板的可调谐谐振电路。 由HTS材料形成的至少一个谐振器设置在基板上，谐振器具有一个或多个匝，当组合时，该谐振器转过大于360°。
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2.发明申请SPIN-CURRENT SWITCHABLE MAGNETIC MEMORY ELEMENT AND METHOD OF FABRICATING THE MEMORY ELEMENT 有权旋转电流可切换磁记忆元件和制作记忆元件的方法公开(公告)号：US20080025082A1
公开(公告)日：2008-01-31
申请号：US11869593
申请日：2007-10-09
Applicant: Jonathan Sun , Stuart Parkin
Inventor： Jonathan Sun , Stuart Parkin
CPC classification number: G11C11/16 , G11C11/161
Abstract: A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
Abstract translation: 自旋电流可切换磁存储元件（及其制造方法）包括具有垂直磁各向异性分量的多个磁性层，所述多个磁性层中的至少一个包括稀土类金属和 过渡金属以及与所述多个磁性层中的至少一个相邻形成的至少一个阻挡层。
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公开(公告)号：US20050189943A1
公开(公告)日：2005-09-01
申请号：US10823273
申请日：2004-04-12
Applicant: Robert Hammond , Jonathan Sun , Douglas Scalapino , Timothy James , Lincoln Bourne
Inventor： Robert Hammond , Jonathan Sun , Douglas Scalapino , Timothy James , Lincoln Bourne
IPC: G01R33/34 , H01F6/06 , H01G4/008 , H01L39/16 , H01P1/203 , H01P7/08 , H01Q1/36 , H03K17/00 , H03K17/78 , H03K17/92 , G01V3/00
CPC classification number: H01G4/008 , G01R33/34007 , G01R33/34023 , G01R33/34053 , G01R33/341 , G01R33/3642 , G01R33/3671 , H01F6/06 , H01P1/203 , H01P7/08 , H01P7/088 , H01Q1/364 , H03K17/78 , H03K17/92 , H03K2217/0036
Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.
Abstract translation: 调谐高温超导体（HTS）谐振器的方法包括提供HTS电感器和HTS电容器的步骤，HTS电容器电连接到HTS电感器。 调谐体靠近HTS电感和HTS电容。 改变调谐体相对于HTS电感器和HTS电容器的相对位置，以调谐谐振器。 提供了包括具有平坦表面的基板的可调谐谐振电路。 由HTS材料形成的至少一个谐振器设置在基板上，谐振器具有一个或多个匝，当组合时，该谐振器转过大于360°。
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4.发明申请Enhanced Programming Performance in a Nonvolatile Memory Device Having a Bipolar Programmable Storage Element 审中-公开具有双极可编程存储元件的非易失性存储器件中的增强的编程性能公开(公告)号：US20070274125A1
公开(公告)日：2007-11-29
申请号：US11839239
申请日：2007-08-15
Applicant: Johannes Bednorz , John DeBrosse , Chung Lam , Gerhard Meijer , Jonathan Sun
Inventor： Johannes Bednorz , John DeBrosse , Chung Lam , Gerhard Meijer , Jonathan Sun
IPC: G11C11/411
CPC classification number: G11C11/16 , G11C11/5685 , G11C13/0007 , G11C2213/31 , G11C2213/79
Abstract: A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
Abstract translation: 非易失性存储单元包括可操作地存储存储单元的逻辑状态的双极可编程存储元件和包括第一和第二源极/漏极和栅极的金属氧化物半导体器件。 双极可编程存储元件的第一端子适于连接到第一位线。 第一源极/漏极连接到双极可编程存储元件的第二端子，第二源极/漏极适于连接到第二位线，并且栅极适于连接到字线。
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5.发明申请Phase-change memory cell and method of fabricating the phase-change memory cell 失效相变存储单元和相变存储单元的制造方法公开(公告)号：US20050227177A1
公开(公告)日：2005-10-13
申请号：US11150184
申请日：2005-06-13
Applicant: Jonathan Sun , Simone Raoux , Hemantha Wickramasinghe
Inventor： Jonathan Sun , Simone Raoux , Hemantha Wickramasinghe
IPC: G11B7/24 , H01L27/095 , H01L29/06 , H01L29/47 , H01L29/812 , H01L39/00 , H01L45/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
Abstract translation: 存储单元和存储单元的制造方法包括形成在第一电极层上的绝缘层，所述绝缘层具有第一开口，形成在所述绝缘层上的模板层，并且具有第二开口，所述第二开口形成在所述第一开口 在第一开口中形成在第一电极层的表面上的相变材料层和导电层，导电层包括形成在模板层上的第一部分，并且限定形成在相位上的第二电极层和第二部分 交换材料层。
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Patent Agency Ranking
6.发明申请PHASE-CHANGE MEMORY CELL AND METHOD OF FABRICATING THE PHASE-CHANGE MEMORY CELL 失效相变存储器单元和相变存储器单元的制作方法公开(公告)号：US20050167656A1
公开(公告)日：2005-08-04
申请号：US10766936
申请日：2004-01-30
Applicant: Jonathan Sun , Simone Raoux , Hemantha Wichramasinghe
Inventor： Jonathan Sun , Simone Raoux , Hemantha Wichramasinghe
IPC: G11B7/24 , H01L27/095 , H01L29/06 , H01L29/47 , H01L29/812 , H01L39/00 , H01L45/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C2213/52 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/144 , H01L45/1625 , H01L45/1666
Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
Abstract translation: 存储单元和存储单元的制造方法包括形成在第一电极层上的绝缘层，所述绝缘层具有第一开口，形成在所述绝缘层上的模板层，并且具有第二开口，所述第二开口形成在所述第一开口 在第一开口中形成在第一电极层的表面上的相变材料层和导电层，导电层包括形成在模板层上的第一部分，并且限定形成在相位上的第二电极层和第二部分 交换材料层。
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7.发明申请Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element 有权适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法公开(公告)号：US20050104101A1
公开(公告)日：2005-05-19
申请号：US10715376
申请日：2003-11-19
Applicant: Jonathan Sun , Rolf Allenspach , Stuart Stephen Parkin , John Slonczewski , Bruce Terris
Inventor： Jonathan Sun , Rolf Allenspach , Stuart Stephen Parkin , John Slonczewski , Bruce Terris
CPC classification number: H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
Abstract translation: 通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层 的磁性层（例如，两层磁性层之间）。 存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。
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8.发明授权Robust self-aligned process for sub-65nm current-perpendicular junction pillars 有权用于sub-65nm电流垂直连接柱的鲁棒自对准工艺公开(公告)号：US07993535B2
公开(公告)日：2011-08-09
申请号：US11627824
申请日：2007-01-26
Applicant: Xin Jiang , Stuart Stephen Papworth Parkin , Jonathan Sun
Inventor： Xin Jiang , Stuart Stephen Papworth Parkin , Jonathan Sun
IPC: H01B13/00 , C03C15/00 , C03C25/68 , C23F1/00 , B44C1/22 , H01L21/302 , H01L21/461
CPC classification number: H01L43/12
Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.
Abstract translation: 一种用于制造器件的方法包括形成第一绝缘层以覆盖可去除的掩模和由掩模限定的器件结构。 器件结构在掩模之下。 提起面罩以露出装置结构的顶部。 在第一绝缘层和器件结构的暴露顶部上形成导电岛结构。 第一绝缘层和导电岛结构被第二绝缘层覆盖。 通过第二绝缘层向导电岛结构形成接触。
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9.发明申请公开(公告)号：US20060104110A1
公开(公告)日：2006-05-18
申请号：US10990401
申请日：2004-11-18
Applicant: Jonathan Sun , Stuart Papworth Parkin
Inventor： Jonathan Sun , Stuart Papworth Parkin
IPC: G11C11/15
CPC classification number: G11C11/16 , G11C11/161
Abstract: A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
Abstract translation: 自旋电流可切换磁存储元件（及其制造方法）包括具有垂直磁各向异性分量的多个磁性层，所述多个磁性层中的至少一个包括稀土类金属和 过渡金属以及与所述多个磁性层中的至少一个相邻形成的至少一个阻挡层。
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10.发明申请Robust Self-Aligned Process for Sub-65nm Current-Perpendicular Junction Pillars 有权用于子65nm电流 - 垂直接合柱的稳健自对准过程公开(公告)号：US20100330707A1
公开(公告)日：2010-12-30
申请号：US11627824
申请日：2007-01-26
Applicant: Xin Jiang , Stuart Stephen Papworth Parkin , Jonathan Sun
Inventor： Xin Jiang , Stuart Stephen Papworth Parkin , Jonathan Sun
CPC classification number: H01L43/12
Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.
Abstract translation: 一种用于制造器件的方法包括形成第一绝缘层以覆盖可去除的掩模和由掩模限定的器件结构。 器件结构在掩模之下。 提起面罩以露出装置结构的顶部。 在第一绝缘层和器件结构的暴露顶部上形成导电岛结构。 第一绝缘层和导电岛结构被第二绝缘层覆盖。 通过第二绝缘层向导电岛结构形成接触。
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