公开(公告)号：US06455233B1

公开(公告)日：2002-09-24

申请号：US09297577

申请日：1999-07-06

Applicant: Frank Watt ,  Stuart Victor Springham ,  Thomas Osipowicz ,  Mark Breese

Inventor： Frank Watt ,  Stuart Victor Springham ,  Thomas Osipowicz ,  Mark Breese

IPC: G03F720

CPC classification number: G03F7/2065 ,  H01J2237/31755

Abstract: Structures of microminiature dimensions are formed by scanning a nearly parallel beam of high energy light ions across the surface of a resist material such as PMMA in a predetermined pattern. The resulting chemical changes in the exposed resist material allows a chemical developer to remove the exposed material while leaving the unexposed material substantially unaffected. In addition because the ions have a well defined range in the material depending on their energy, the resist can be exposed to a predetermined well defined depth. By this method, resist structures of three dimensional complexity can be micromachined. This is achieved by simultaneously scanning the beam and orienting the resist layer in a controlled manner. Further enhancement may be achieved by the use of multiple deposition and exposure of resist layers. These resist microstructures may be further utilized to produce microstructures in other materials by the application of processes such as electroplating and micromoulding.

Abstract translation: 通过以预定图案扫描几乎平行的高能轻离子束穿过诸如PMMA的抗蚀剂材料的表面而形成微尺寸尺寸的结构。 暴露的抗蚀剂材料的所得化学变化允许化学显影剂除去暴露的材料，同时使未曝光的材料基本上不受影响。 此外，由于离子根据其能量在材料中具有良好限定的范围，所以抗蚀剂可以暴露于预定的良好限定的深度。 通过这种方法，三维复杂度的抗蚀结构可以被微加工。 这通过同时扫描光束并以受控的方式定向抗蚀剂层来实现。 可以通过使用多次沉积和抗蚀剂层的曝光来实现进一步的增强。 这些抗蚀剂微结构可以进一步用于通过应用诸如电镀和微成型的工艺在其它材料中产生微结构。

公开(公告)号：US08399849B1

公开(公告)日：2013-03-19

申请号：US12538138

申请日：2009-08-08

Applicant: Mahadevan Krishnan ,  Mahmud Vahdat Roshan ,  Paul Choon Keat Lee ,  Rajdeep Singh Rawat ,  Stuart Victor Springham

Inventor： Mahadevan Krishnan ,  Mahmud Vahdat Roshan ,  Paul Choon Keat Lee ,  Rajdeep Singh Rawat ,  Stuart Victor Springham

IPC: G01T5/00 ,  G01T1/00

CPC classification number: G01T3/06

Abstract: An activation detector for fast-neutrons has a yttrium target exposed to a neutron source. Fast-neutrons which have energy in excess of 1 MeV (above a threshold energy level) generate gamma rays from a nuclear reaction with the yttrium, the gamma rays having an energy level of 908.96 keV, and the resultant gamma rays are coupled to a scintillator which generates an optical response, the optical response of the scintillator is coupled to a photomultiplier tube which generates an electrical response. The number of counts from the photomultiplier tube provides an accurate indication of the fast-neutron flux, and the detector is exclusively sensitive to fast-neutrons with an energy level over 1 MeV, thereby providing a fast-neutron detector which does not require calibration or the setting of a threshold.

Abstract translation: 用于快中子的激活检测器具有暴露于中子源的钇靶。 具有超过1MeV（高于阈值能级）的能量的快中子产生与钇的核反应的伽马射线，伽马射线具有908.96keV的能级，并且所得到的伽马射线与闪烁体 其产生光学响应，闪烁体的光学响应耦合到产生电响应的光电倍增管。 来自光电倍增管的计数提供了快中子通量的精确指示，检测器对能量水平超过1 MeV的快中子是非常敏感的，从而提供不需要校准的快中子检测器 设置阈值。