公开(公告)号：US09904168B2

公开(公告)日：2018-02-27

申请号：US15205250

申请日：2016-07-08

Applicant: FUJIFILM Corporation

Inventor： Natsumi Yokokawa ,  Shuhei Yamaguchi ,  Koutarou Takahashi

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/20 ,  H01L21/027 ,  C08F220/20 ,  C08F220/28 ,  G03F7/00 ,  C08F220/30 ,  C08F12/24 ,  C08F12/30 ,  C08F112/14 ,  C09D125/18 ,  C08F116/10 ,  C08F214/18 ,  C08F216/10 ,  C08F220/16 ,  C08F224/00 ,  G03F7/32 ,  G03F7/039 ,  C08F12/18 ,  C08F12/20

CPC classification number: G03F7/038 ,  B41C2210/04 ,  B41C2210/06 ,  B41C2210/22 ,  B41C2210/24 ,  C08F12/18 ,  C08F12/20 ,  C08F12/24 ,  C08F12/30 ,  C08F112/14 ,  C08F116/10 ,  C08F214/186 ,  C08F216/10 ,  C08F220/16 ,  C08F220/20 ,  C08F220/28 ,  C08F220/30 ,  C08F224/00 ,  C09D125/18 ,  G03F7/0015 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2059 ,  G03F7/2065 ,  G03F7/322 ,  G03F7/325 ,  H01L21/0274 ,  C08F212/14 ,  C08F212/32 ,  C08F212/34

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L1 in General Formula (3).

公开(公告)号：US20170123304A1

公开(公告)日：2017-05-04

申请号：US15065105

申请日：2016-03-09

Applicant: SK hynix Inc.

Inventor： Choong Han RYU

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/78 ,  G03F7/2063 ,  G03F7/2065

Abstract: A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

公开(公告)号：US20130157198A1

公开(公告)日：2013-06-20

申请号：US13706908

申请日：2012-12-06

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi YOSHIKAWA ,  Munehiro Ogasawara

IPC: G03F7/20 ,  G21K5/10

CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

Abstract: A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

Abstract translation: 根据实施例的多带电粒子束写入装置包括设置单元，用于设置第二区域，使得除了缺陷光束通过的开口之外的剩余开口中的更多开口包括在第二区域中，选择单元选择 通过使用在第二区域中通过的开口的多个光束将图案写在目标物体上的第一模式的模式以及通过使用剩余多个光束中的至少一个来移动位置的同时进行多次写入的第二模式 在有缺陷的光束被控制为光束关闭的状态下，并且对于应该由缺陷光束写入的位置执行附加写入;以及写入处理控制单元，用于控制以所选择的模式写入。

公开(公告)号：US08337712B2

公开(公告)日：2012-12-25

申请号：US12120461

申请日：2008-05-14

Applicant: Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

Inventor： Kenji Tamamori ,  Masahiko Okunuki ,  Shinan Wang ,  Taiko Motoi ,  Haruhito Ono ,  Toshiaki Aiba

IPC: B29D11/00 ,  B44C1/22

CPC classification number: B29D11/00 ,  G02B2006/1213 ,  G03F7/2065 ,  H01S5/105 ,  H01S5/2081

Abstract: A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.

Abstract translation: 形成蚀刻掩模的方法包括将聚焦的离子束照射到衬底的表面上，并且在照射区域中形成用于包括含离子的部分的倾斜蚀刻的蚀刻掩模。 制造三维结构的方法包括：准备衬底，将聚焦的离子束照射到衬底的表面上，并在照射区域中形成包括含离子的部分的蚀刻掩模，并从对角线对衬底进行干蚀刻 方向，并形成多个孔。

公开(公告)号：US06787759B1

公开(公告)日：2004-09-07

申请号：US10421192

申请日：2003-04-23

Applicant: Mark E. Saffman

Inventor： Mark E. Saffman

IPC: H05H503

CPC classification number: G03F7/70375 ,  G03F7/2065 ,  G03F7/70 ,  G21K1/06 ,  H05H3/02

Abstract: Atomic lithography for depositing atoms on a substrate is carried out by forming an atomic beam, and directing it toward a substrate, and providing converging laser beams above a surface of the substrate, wherein the laser beams are modulated by at least one spatial light modulator through which the laser beam passes to form at least one high intensity optical spot by interference to selectively focus the atomic beam. The optical spot and focused atomic beam can be translated in a selected pattern by appropriate control of the individual pixel elements in the spatial light modulator. An atomic lithography system that can be configured to form arbitrary two-dimensional nanostructures on a substrate may include at least one spatial light modulator and lenses positioned adjacent the at least one spatial light modulator. The lenses and the at least one spatial light modulator are configured to selectively form a high intensity optical spot to focus atoms from an atomic beam onto the substrate.

Abstract translation: 通过形成原子束并将其引导到衬底并且在衬底的表面上方提供会聚的激光束来进行用于在衬底上沉积原子的原子光刻，其中激光束被至少一个空间光调制器 激光束通过干涉而形成至少一个高强度光点，以选择性地聚焦原子束。 通过适当地控制空间光调制器中的各个像素元件，可以将光点和聚焦原子束转换成选定的图案。 可以配置成在衬底上形成任意二维纳米结构的原子光刻系统可以包括至少一个空间光调制器和位于至少一个空间光调制器附近的透镜。 透镜和至少一个空间光调制器被配置为选择性地形成高强度光点以将来自原子束的原子聚焦到衬底上。

公开(公告)号：US06455233B1

公开(公告)日：2002-09-24

申请号：US09297577

申请日：1999-07-06

Applicant: Frank Watt ,  Stuart Victor Springham ,  Thomas Osipowicz ,  Mark Breese

Inventor： Frank Watt ,  Stuart Victor Springham ,  Thomas Osipowicz ,  Mark Breese

IPC: G03F720

CPC classification number: G03F7/2065 ,  H01J2237/31755

Abstract: Structures of microminiature dimensions are formed by scanning a nearly parallel beam of high energy light ions across the surface of a resist material such as PMMA in a predetermined pattern. The resulting chemical changes in the exposed resist material allows a chemical developer to remove the exposed material while leaving the unexposed material substantially unaffected. In addition because the ions have a well defined range in the material depending on their energy, the resist can be exposed to a predetermined well defined depth. By this method, resist structures of three dimensional complexity can be micromachined. This is achieved by simultaneously scanning the beam and orienting the resist layer in a controlled manner. Further enhancement may be achieved by the use of multiple deposition and exposure of resist layers. These resist microstructures may be further utilized to produce microstructures in other materials by the application of processes such as electroplating and micromoulding.

Abstract translation: 通过以预定图案扫描几乎平行的高能轻离子束穿过诸如PMMA的抗蚀剂材料的表面而形成微尺寸尺寸的结构。 暴露的抗蚀剂材料的所得化学变化允许化学显影剂除去暴露的材料，同时使未曝光的材料基本上不受影响。 此外，由于离子根据其能量在材料中具有良好限定的范围，所以抗蚀剂可以暴露于预定的良好限定的深度。 通过这种方法，三维复杂度的抗蚀结构可以被微加工。 这通过同时扫描光束并以受控的方式定向抗蚀剂层来实现。 可以通过使用多次沉积和抗蚀剂层的曝光来实现进一步的增强。 这些抗蚀剂微结构可以进一步用于通过应用诸如电镀和微成型的工艺在其它材料中产生微结构。

公开(公告)号：US20010027029A1

公开(公告)日：2001-10-04

申请号：US09772858

申请日：2001-05-09

Inventor： Akifumi Kamijima

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/0337 ,  G03F7/093 ,  G03F7/2065

Abstract: At least one strippable film on a surface of a thin film to be patterned is formed, then the at least one strippable film and the thin film to be patterned is patterned by using FIB, and thereafter the at least one strippable film is removed.

Abstract translation: 形成待图案化薄膜表面上的至少一个可剥离薄膜，然后使用FIB对待图案化的至少一个可剥离薄膜和薄膜进行图案化，然后除去至少一个可剥离薄膜。

公开(公告)号：US6048671A

公开(公告)日：2000-04-11

申请号：US195255

申请日：1998-11-18

Applicant: Masahiro Hatakeyama ,  Katsunori Ichiki ,  Yotaro Hatamura

Inventor： Masahiro Hatakeyama ,  Katsunori Ichiki ,  Yotaro Hatamura

IPC: G03F1/00 ,  G03F1/20 ,  G03F7/00 ,  G03F7/20 ,  H01J9/02 ,  H01L21/033 ,  H01L21/308 ,  G03C5/58 ,  B44C1/22

CPC classification number: H01L21/3086 ,  G03F7/00 ,  G03F7/001 ,  G03F7/2065 ,  G03F7/70358 ,  H01J9/025 ,  H01L21/0331 ,  H01L21/0337 ,  H01J2209/0223

Abstract: An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basis technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. Applications of devices having the fine structures produced by the method include wavelength shifting in optical communications, quantum effect devices and intensive laser devices.

公开(公告)号：US5357116A

公开(公告)日：1994-10-18

申请号：US980371

申请日：1992-11-23

Applicant: Christopher G. Talbot ,  Thomas M. Trexler

Inventor： Christopher G. Talbot ,  Thomas M. Trexler

IPC: G03F1/74 ,  G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/30

CPC classification number: G03F1/74 ,  G03F7/093 ,  G03F7/2065

Abstract: Focused ion beam (FIB) systems are used for IC mask or reticle repair and imaging and other applications. The impinging ions can cause an undesirable charge build-up on the specimen. Prior to beginning repair operations in a FIB system, a fluid containing a conductive material such as dimethyl ammonium salt is applied to the reticle, mask or device and allowed to dry, leaving a thin conductive layer on the specimen. A leakage path is preferably provided from the thin conductive layer to ground, to prevent charge buildup on the specimen. The FIB is used to cut through the conductive layer before commencing FIB deposition, to assure proper bonding of the deposited material. The technique also has application with electron beam imaging systems.

Abstract translation: 聚焦离子束（FIB）系统用于IC掩模或掩模版修复和成像等应用。 撞击的离子会导致样品上不希望的电荷积聚。 在FIB系统开始修复操作之前，将含有导电材料如二甲基铵盐的流体施加到掩模版，掩模或器件上，并使其干燥，在样品上留下薄的导电层。 优选地，从薄导电层到地面提供泄漏路径，以防止样品上的电荷累积。 在开始FIB沉积之前，FIB用于切割导电层，以确保沉积材料的正确结合。 该技术还具有电子束成像系统的应用。

公开(公告)号：US5175075A

公开(公告)日：1992-12-29

申请号：US443972

申请日：1989-11-30

Applicant: Gary A. Frazier ,  Keith Bradshaw

Inventor： Gary A. Frazier ,  Keith Bradshaw

IPC: G03F7/20

CPC classification number: G03F7/2065

Abstract: Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.

Abstract translation: 抗蚀剂（402）由正电子束曝光（320）是类似于电子束光刻机的设备（300）。