公开(公告)号：US20090032873A1

公开(公告)日：2009-02-05

申请号：US11895125

申请日：2007-08-23

申请人： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

发明人： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L21/2007 ,  H01L29/78654

摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.

摘要翻译： 用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。