公开(公告)号：US06912078B2

公开(公告)日：2005-06-28

申请号：US10098830

申请日：2002-03-15

申请人： Thomas David Kudrle ,  Carlos Horacio Mastrangelo ,  Marc Waelti ,  ChuanChe Wang ,  Gordon M. Shedd ,  Gregory A. Kirkos ,  Mirela Gabriela Bancu ,  James Ching-Ming Hsiao

发明人： Thomas David Kudrle ,  Carlos Horacio Mastrangelo ,  Marc Waelti ,  ChuanChe Wang ,  Gordon M. Shedd ,  Gregory A. Kirkos ,  Mirela Gabriela Bancu ,  James Ching-Ming Hsiao

IPC分类号： B81B3/00 ,  G02B6/35 ,  G02B26/08 ,  G01C19/04 ,  G02B7/182 ,  G02B26/00

CPC分类号： G02B6/357 ,  B81B3/0062 ,  G02B6/3518 ,  G02B6/3556 ,  G02B6/3584 ,  G02B26/0841 ,  H01L2924/19107 ,  Y10S359/904

摘要： One embodiment is directed to a gimbal mechanism for a MEMS mirror device having folded flexure hinges. Another embodiment is directed to a gimbal mechanism having a frame with through-holes or recesses distributed thereabout to reduce weight of said frame. Other embodiments are directed to improved electrode structures for electrostatically actuated MEMS devices. Other embodiments are directed to methods for fabricating electrodes for electrostatically actuated MEMS devices. Other embodiments are directed to methods of fabricating through-wafer interconnect devices. Other embodiments are directed to MEMS mirror array packaging. Other embodiments are directed to electrostatically actuated MEMS devices having driver circuits integrated therewith. Other embodiments are directed to methods of patterning wafers with a plurality of through-holes. Other embodiments are directed to methods of forming moveable structures in MEMS devices. Other embodiments are directed to methods of depositing a thin film on the back of a MEMS device.

摘要翻译： 一个实施例涉及一种具有折叠的弯曲铰链的MEMS反射镜装置的万向节机构。 另一个实施例涉及一种万向节机构，其具有在其周围分布有通孔或凹部的框架，以减轻所述框架的重量。 其他实施例涉及用于静电致动MEMS装置的改进的电极结构。 其他实施例涉及用于制造用于静电致动MEMS器件的电极的方法。 其他实施例涉及制造跨晶片互连器件的方法。 其他实施例涉及MEMS反射镜阵列封装。 其他实施例涉及具有与其集成的驱动电路的静电致动MEMS器件。 其他实施例涉及用多个通孔图案化晶片的方法。 其他实施例涉及在MEMS器件中形成可移动结构的方法。 其他实施例涉及在MEMS器件的背面上沉积薄膜的方法。

公开(公告)号：US20100327354A1

公开(公告)日：2010-12-30

申请号：US12865006

申请日：2009-01-27

申请人： Jin Jang ,  Carlo Anthony Kosik Williams ,  ChuanChe Wang

发明人： Jin Jang ,  Carlo Anthony Kosik Williams ,  ChuanChe Wang

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78621 ,  H01L27/3262

摘要： Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications.

摘要翻译： 用于制造薄膜晶体管（TFT）的方法和设备导致：玻璃或玻璃陶瓷衬底; 单晶半导体层; 设置在单晶半导体层上的源极结构; 设置在单晶半导体层上的漏极结构; 以及相对于在其中限定轻掺杂漏极区的漏极结构定位的栅结构，其中轻掺杂漏极区的横向长度使得TFT表现出相对较低的载流子迁移率和适合于OLED显示的适度亚阈值斜率 应用程序。

公开(公告)号：US20090032873A1

公开(公告)日：2009-02-05

申请号：US11895125

申请日：2007-08-23

申请人： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

发明人： Jeffrey Scott Cites ,  Jin Jang ,  ChuanChe Wang ,  Carlo Anthony Kosik Williams ,  Sung Eun Ahn

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78603 ,  H01L21/2007 ,  H01L29/78654

摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.

摘要翻译： 用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

公开(公告)号：US20100276736A1

公开(公告)日：2010-11-04

申请号：US12771544

申请日：2010-04-30

申请人： Mark Frederick Bocko ,  Zeljko Ignjatovic ,  Carlo Anthony Kosik Williams ,  Donnell Thaddeus Walton ,  ChuanChe Wang ,  James Matthew Zavislan

发明人： Mark Frederick Bocko ,  Zeljko Ignjatovic ,  Carlo Anthony Kosik Williams ,  Donnell Thaddeus Walton ,  ChuanChe Wang ,  James Matthew Zavislan

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14647 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469

摘要： Methods and apparatus for producing a CMOS image sensor result in a plurality of photo sensitive layers, each layer including: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including a plurality of semiconductor islands, at least one island operating as a color sensitive photo-detector sensitive to a respective range of light wavelengths, wherein the plurality of photo sensitive layers are stacked one on the other, such that incident light enters the CMOS image sensor through the first spaced-apart surface of the glass or glass ceramic substrate of one of the plurality of photo sensitive layers, and subsequently passes into further photo sensitive layers if one or more wavelengths of the incident light are sufficiently long.

摘要翻译： 用于制造CMOS图像传感器的方法和装置产生多个感光层，每个层包括：具有第一和第二间隔表面的玻璃或玻璃陶瓷基片; 设置在玻璃或玻璃陶瓷基板的第一表面上的半导体层; 以及形成在所述半导体层中的多个像素结构，每个像素结构包括多个半导体岛，至少一个岛作为对各个光波长范围敏感的感光光敏检测器，其中所述多个光敏层 彼此堆叠，使得入射光通过多个光敏层中的一个的玻璃或玻璃陶瓷基板的第一间隔开的表面进入CMOS图像传感器，并且随后进入另外的光敏层，如果一个 或更多波长的入射光足够长。