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1.发明申请Monitoring plasma ion implantation systems for fault detection and process control 失效监测等离子体离子注入系统进行故障检测和过程控制公开(公告)号：US20080026133A1
公开(公告)日：2008-01-31
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。
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2.发明授权Monitoring plasma ion implantation systems for fault detection and process control 失效监测等离子体离子注入系统进行故障检测和过程控制公开(公告)号：US07878145B2
公开(公告)日：2011-02-01
申请号：US10858582
申请日：2004-06-02
申请人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
发明人： Ziwei Fang , Sung-Cheon Ko , Edmund J. Winder , Daniel Distaso , Ludovic Godet , Bon Woong Koo , Jay T. Scheuer
IPC分类号： C23C16/00
CPC分类号： H01J37/32412
摘要： A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
摘要翻译： 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的源，用于在处理室中保持衬底的压板和用于产生用于将等离子体离子加速到衬底中的用于产生注入脉冲的脉冲源。 在一个方面，该系统包括配置成测量处理室中的离子质量和能量的等离子体监测器，以及配置成响应于测量的质量和能量来确定系统的操作状态的分析器。 在另一方面，该系统包括：数据获取单元，被配置为获取植入脉冲的样本和被配置为基于获取的样本来确定系统的操作条件的分析器。
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