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公开(公告)号：US09297063B2
公开(公告)日：2016-03-29
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
IPC分类号： H01J37/317 , H01J37/16 , C23C14/48 , C23C16/04 , H01J37/32
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。
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公开(公告)号：US08916056B2
公开(公告)日：2014-12-23
申请号：US13649159
申请日：2012-10-11
申请人： Bon-Woong Koo , Richard M. White
发明人： Bon-Woong Koo , Richard M. White
IPC分类号： B44C1/22 , H01L21/302 , C23C16/503
CPC分类号： H01J37/32862 , H01J37/32422 , H01J37/32706
摘要： A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurring after the first processing time interval.
摘要翻译： 等离子体处理装置包括限定处理室的处理室壳体，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源和偏置系统。 偏置系统被配置为偏压压板以在第一处理时间间隔期间从等离子体离开工件以吸引离子，并且构造成在清洁时间间隔期间偏压压板以从压板排向离开处理室壳体的内表面。 清洁时间间隔与第一处理时间间隔分开，并且在第一处理时间间隔之后发生。
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公开(公告)号：US20140021373A1
公开(公告)日：2014-01-23
申请号：US13555910
申请日：2012-07-23
IPC分类号： G21K5/02
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J2237/24564
摘要： An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.
摘要翻译： 公开了一种离子注入系统和方法，其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。 调制电源系统包括传统电源和与每个电源相关联的控制单元，其中如果检测到毛刺或电弧，则使用控制单元将电源与电极隔离。 然后，控制单元在毛刺状态被修正之后恢复连通性。
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公开(公告)号：US20130287964A1
公开(公告)日：2013-10-31
申请号：US13457451
申请日：2012-04-26
申请人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
发明人： Svetlana B. Radovanov , Victor M. Benveniste , Bon-Woong Koo , Richard M. White , Kevin M. Daniels
CPC分类号： C23C14/48 , C23C16/042 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0817 , H01J2237/083
摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。
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公开(公告)号：US08329055B2
公开(公告)日：2012-12-11
申请号：US12244017
申请日：2008-10-02
申请人： Bon-Woong Koo
发明人： Bon-Woong Koo
IPC分类号： C03C15/00
CPC分类号： G21K5/02 , C23C14/48 , H01J37/32412 , H01J37/32623 , H01J37/32706
摘要： Apparatus and method for improving the plasma uniformity in a plasma based system are described. The apparatus may include a plurality of electrical conductors, to which one or more types of electrical potentials may be applied. The conductors may be arranged in an array and may preferably be positioned near the plasma. By applying the bias voltages to the various electrically conductors, the plasma can be manipulated. For example, the conductors may extract or confine the electrons in the plasma, thereby locally adjusting the plasma density near the conductors. In the process, uniformity of the plasma density or ion concentration in the plasma may be improved. In a further embodiment, a magnetic field is included in the same direction as the electric field created by the bias voltage so as to better confine the charged particles.
摘要翻译： 描述了用于改善基于等离子体的系统中的等离子体均匀性的装置和方法。 该装置可以包括可施加一种或多种类型的电位的多个电导体。 导体可以排列成阵列，并且优选地位于等离子体附近。 通过将偏置电压施加到各种电导体，可以操纵等离子体。 例如，导体可以提取或限制等离子体中的电子，从而局部地调节导体附近的等离子体密度。 在该过程中，等离子体中的等离子体密度或离子浓度的均匀性可以得到改善。 在另一个实施例中，磁场包括在与由偏置电压产生的电场相同的方向上，以便更好地限制带电粒子。
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6.发明申请TECHNIQUE AND APPARATUS FOR MONITORING ION MASS, ENERGY, AND ANGLE IN PROCESSING SYSTEMS 有权用于监控处理系统中离子质量，能量和角度的技术和装置公开(公告)号：US20120175518A1
公开(公告)日：2012-07-12
申请号：US12987950
申请日：2011-01-10
IPC分类号： H01J49/00
CPC分类号： H01J49/40 , H01J37/244 , H01J37/3171 , H01J37/32935 , H01J49/04 , H01J2237/24528 , H01J2237/24542
摘要： A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.
摘要翻译： 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。
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公开(公告)号：US20120168622A1
公开(公告)日：2012-07-05
申请号：US12981002
申请日：2010-12-29
IPC分类号： H01J49/30
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/20 , H01J49/30 , H01J2237/055 , H01J2237/057 , H01J2237/20221
摘要： An implantation system includes an ion extraction plate having a set of apertures configured to extract ions from an ion source to form a plurality of beamlets. A magnetic analyzer is configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to a principle axis of the beamlets. A mass analysis plate includes a set of apertures wherein first ion species having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species having a second mass/charge ratio are blocked by the mass analysis plate. A workpiece holder is configured to move with respect to the mass analysis plate in a second direction perpendicular to the first direction, wherein a pattern of ions transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate.
摘要翻译： 植入系统包括具有一组孔口的离子提取板，其被配置为从离子源提取离子以形成多个子束。 磁分析器被配置为提供磁场，以在大体上垂直于子束的主轴的第一方向上偏转子束中的离子。 质量分析板包括一组孔，其中具有第一质量/荷率的第一离子种类通过质量分析板传输，具有第二质量/荷重比的第二离子种被质量分析板阻挡。 工件保持器构造成在与第一方向垂直的第二方向上相对于质量分析板移动，其中通过质量分析板传输的离子图案在衬底处沿着第一方向形成连续的离子束电流。
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公开(公告)号：US08188448B2
公开(公告)日：2012-05-29
申请号：US12754381
申请日：2010-04-05
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译： 提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。 离子源包括具有限定内表面的壁的室。 衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。 在室壁的内表面的至少一部分和衬垫之间限定间隙。 第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。 第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。
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公开(公告)号：US07820988B2
公开(公告)日：2010-10-26
申请号：US12244001
申请日：2008-10-02
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3007 , H01J2237/0041 , H01J2237/047 , H01J2237/24507 , H01J2237/24535 , H01J2237/30472 , H01J2237/30477 , H01J2237/31701 , H01J2237/31703
摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要翻译： 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。
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公开(公告)号：US20090314951A1
公开(公告)日：2009-12-24
申请号：US12143247
申请日：2008-06-20
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/024 , H01J2237/0458 , H01J2237/061
摘要： In a cleaning process for an ion source chamber, an electrode positioned outside of the ion source chamber includes a suppression plug. When the cleaning gas is introduced into the source chamber, the suppression plug may engage an extraction aperture of the source chamber to adjust the gas pressure within the chamber to enhance chamber cleaning via. plasma-enhanced chemical reaction. The gas conductance between the source chamber aperture and the suppression plug can be adjusted during the cleaning process to provide optimum cleaning conditions and to exhaust unwanted deposits.
摘要翻译： 在离子源室的清洁处理中，位于离子源室外的电极包括抑制塞。 当清洁气体被引入源室中时，抑制塞可以接合源室的提取孔以调节室内的气体压力以增强室清洁。 等离子体增强化学反应。 在清洁过程中可以调节源室孔和抑制塞之间的气体传导，以提供最佳的清洁条件并排出不需要的沉积物。
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