公开(公告)号：US07872321B2

公开(公告)日：2011-01-18

申请号：US11557326

申请日：2006-11-07

申请人： Kyung-Ho Shin ,  Jim-Ki Hong ,  Sung-Jung Joo ,  Kung-Won Rhie

发明人： Kyung-Ho Shin ,  Jim-Ki Hong ,  Sung-Jung Joo ,  Kung-Won Rhie

IPC分类号： H01L29/82

CPC分类号： H01L43/06 ,  G01R33/07 ,  G01R33/095 ,  H01L43/065 ,  H01L43/08

摘要： A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

摘要翻译： 混合半导体 - 铁磁体器件是具有沉积在半导体（InAs）二维电子上的微磁体（Co）的器件，并且使用由微型磁体产生的杂散场具有正和负磁场区域的结结构。 在混合半导体 - 铁磁体器件中测量的磁阻具有不对称的霍尔电阻分布，并且其磁阻的变化非常大。 测量数据与使用扩散模式和弹道模型的计算结果非常一致。

公开(公告)号：US08237236B2

公开(公告)日：2012-08-07

申请号：US12762839

申请日：2010-04-19

申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

IPC分类号： H01L29/82

CPC分类号： H01L29/82

摘要： An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

摘要翻译： 提供了一种基于InSb的开关装置，其通过使用用于应用于磁逻辑元件的磁场控制雪崩处理在室温下操作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

公开(公告)号：US20100308378A1

公开(公告)日：2010-12-09

申请号：US12762839

申请日：2010-04-19

申请人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

发明人： Jin Dong Song ,  Sung Jung Joo ,  Jin Ki Hong ,  Sang Hoon Shin ,  Kyung Ho Shin ,  Tae Yueb Kim ,  Ju Young Lim ,  Jin Seo Lee ,  Kung Won Rhie

IPC分类号： H01L29/82

CPC分类号： H01L29/82

摘要： The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

摘要翻译： 本发明提供一种基于InSb的开关装置，其通过使用用于施加到磁逻辑元件的磁场控制雪崩处理在室温下工作。 一个实施例的开关器件包括p型半导体层; n型半导体层; 以及设置在p型和n型半导体层中的一个上的接触层，p型半导体层与n型半导体层接触，使得可以通过接触层将电流施加到p型 和n型半导体层，以使电流从一个接触层流向p型和n型半导体层，并从p型和n型半导体层到另一个接触层，由此， 可以通过施加到基本垂直于其的p型和n型半导体层的磁场的强度来控制电流。

公开(公告)号：US20080048179A1

公开(公告)日：2008-02-28

申请号：US11557326

申请日：2006-11-07

申请人： Kyung-Ho SHIN ,  Jin-Ki Hong ,  Sung-Jung Joo ,  Kung-Won Rhie

发明人： Kyung-Ho SHIN ,  Jin-Ki Hong ,  Sung-Jung Joo ,  Kung-Won Rhie

IPC分类号： H01L51/00

CPC分类号： H01L43/06 ,  G01R33/07 ,  G01R33/095 ,  H01L43/065 ,  H01L43/08

摘要： A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

摘要翻译： 混合半导体 - 铁磁体器件是具有沉积在半导体（InAs）二维电子上的微磁体（Co）的器件，并且使用由微型磁体产生的杂散场具有正和负磁场区域的结结构。 在混合半导体 - 铁磁体器件中测量的磁阻具有不对称的霍尔电阻分布，并且其磁阻的变化非常大。 测量数据与使用扩散模式和弹道模型的计算结果非常一致。