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公开(公告)号：US20240032441A1
公开(公告)日：2024-01-25
申请号：US17892162
申请日：2022-08-22
Applicant: United Microelectronics Corp.
Inventor： Chih-Wei Kuo , Hung-Chan Lin , Chung Yi Chiu
CPC classification number: H01L43/04 , H01L27/222 , H01L43/06 , H01L43/10 , H01L43/14
Abstract: Provided is a magnetoresistive random access memory (MRAM) device including a bottom electrode, a magnetic tunnel junction (MTJ) structure, a first spin orbit torque (SOT) layer, a cap layer, a second SOT layer, an etch stop layer, and an upper metal line layer. The MTJ structure is disposed on the bottom electrode. The first SOT layer is disposed on the MTJ structure. The cap layer is disposed on the first SOT layer. The second SOT layer is disposed on the cap layer. The etch stop layer is disposed on the second SOT layer. The upper metal line layer penetrates though the etch stop layer and is landed on the second SOT layer.
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公开(公告)号：US20230337551A1
公开(公告)日：2023-10-19
申请号：US17743459
申请日：2022-05-13
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Jia-Rong Wu , Chi-Hsuan Cheng , Rai-Min Huang , Po-Kai Hsu
CPC classification number: H01L43/14 , H01L27/222 , H01L43/04 , H01L43/06
Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, forming a first hard mask on the second SOT layer, patterning the first hard mask along a first direction, and then patterning the first hard mask along a second direction.
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公开(公告)号：US20190244651A1
公开(公告)日：2019-08-08
申请号：US16333176
申请日：2018-07-24
Applicant: TDK CORPORATION
Inventor： Yohei SHIOKAWA , Tomoyuki SASAKI
CPC classification number: G11C11/1673 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L21/8239 , H01L27/105 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/06 , H01L43/08 , H01L43/10
Abstract: A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point.
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公开(公告)号：US10326073B1
公开(公告)日：2019-06-18
申请号：US15858808
申请日：2017-12-29
Applicant: Spin Memory, Inc.
Inventor： Michail Tzoufras , Marcin Gajek , Kadriye Deniz Bozdag , Eric Michael Ryan
CPC classification number: H01L43/02 , G11C11/161 , H01L27/222 , H01L43/06 , H01L43/12 , H01L43/14
Abstract: The various implementations described herein include methods, devices, and systems for operating magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a core; (2) a plurality of layers that surround the core in succession; (3) a first input terminal coupled to the core and configured to receive a first current, where: (a) the first current flows radially from the core through the plurality of layers; and (b) the radial flow of the first current imparts a torque on, at least, a magnetization of an inner layer of the plurality of layers; and (4) a second input terminal coupled to the core and configured to receive a second current, where: (i) the second current imparts a Spin Hall Effect (SHE) around a perimeter of the core; and (ii) the SHE contributes to the torque imparted on the magnetization of the inner layer by the first current.
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公开(公告)号：US20190088302A1
公开(公告)日：2019-03-21
申请号：US15915654
申请日：2018-03-08
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naoharu SHIMOMURA , Tomoaki INOKUCHI , Katsuhiko KOUI , Yuzo KAMIGUCHI , Hiroaki YODA , Hideyuki SUGIYAMA
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/228 , H01L43/06 , H01L43/08
Abstract: According to one embodiment, a magnetic memory includes: magnetoresistive effect elements arranged on an conductive layer; and a first circuit which passes a write current through the conductive layer and applies a control voltage to the magnetoresistive effect elements, to write data including a first value and a second value into the magnetoresistive effect elements. The first circuit adjusts at least one of a write sequence of the first value and the second value, a current value of the write current, and a pulse width of the write current, on the basis of an arrangement of the first value and the second value in the data.
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Patent Agency Ranking
公开(公告)号：US10003010B2
公开(公告)日：2018-06-19
申请号：US15448612
申请日：2017-03-03
Applicant: RIKEN
Inventor： Naoto Nagaosa , Wataru Koshibae , Junichi Iwasaki , Masashi Kawasaki , Yoshinori Tokura , Yoshio Kaneko
CPC classification number: H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1653 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/08 , G11C19/0808 , G11C19/085 , G11C19/0866 , H01F7/20 , H01F10/3254 , H01L27/105 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/06 , H01L43/08
Abstract: Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≥λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≥λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.
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公开(公告)号：US20180166197A1
公开(公告)日：2018-06-14
申请号：US15836421
申请日：2017-12-08
Applicant: Regents of the University of Minnesota
Inventor： Jian-Ping Wang , Mahendra DC , Mahdi Jamali , Andre Mkhoyan , Danielle Hickey
CPC classification number: H01F10/329 , G11C11/161 , G11C11/1675 , G11C11/18 , H01F10/123 , H01F10/30 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/10
Abstract: A material may include at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of BixSe(1-x), BixTe(1-x), or SbxTe(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.
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公开(公告)号：US20180123028A1
公开(公告)日：2018-05-03
申请号：US15793523
申请日：2017-10-25
Applicant: TDK CORPORATION
Inventor： Yohei SHIOKAWA , Tomoyuki SASAKI , Tohru OIKAWA
CPC classification number: H01L43/08 , H01F10/324 , H01L43/04 , H01L43/06 , H01L43/10
Abstract: A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.
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公开(公告)号：US20180059759A1
公开(公告)日：2018-03-01
申请号：US15687698
申请日：2017-08-28
Applicant: Rohm Co., Ltd.
Inventor： Kiyotaka UMEMOTO
CPC classification number: G06F1/28 , G05B15/02 , G05B2219/2208 , G06F1/26 , G06F12/0284 , G06F12/0646 , G06F13/10 , G06F2212/1048 , H01L22/34 , H01L23/3114 , H01L23/34 , H01L23/4952 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L25/10 , H01L43/06 , H01L2224/45144 , H01L2224/48245
Abstract: A semiconductor package includes a plurality of chips, which include a plurality of corresponding functional blocks having the same function among the chips, and only one of the corresponding functional blocks having the same function among the chips enables function, and one or more functional blocks enable function in each of the chips, so that the functional blocks are distributed among the chips.
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公开(公告)号：US09891084B2
公开(公告)日：2018-02-13
申请号：US15467084
申请日：2017-03-23
Applicant: International Business Machines Corporation
Inventor： Michael Engel , Rodrigo Neumann Barros Ferreira , Mathias Steiner
CPC classification number: G01R33/072 , G01F1/708 , G01F1/7088 , G01N27/745 , G01R33/07 , G01R33/1269 , H01L43/04 , H01L43/06 , H01L43/10 , H01L43/14
Abstract: A method of detecting a particle comprises magnetizing a particle using an AC magnetic field; generating an AC voltage in a sensing device having a conductive substantially 2-dimensional lattice structure from the magnetized particle; superimposing a DC magnetic field on the generated AC voltage in the sensing device; and measuring an AC Hall voltage at the sensing device.
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