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1.发明授权Hybrid semiconductor-ferromagnet device with a junction structure of positive and negative magnetic-field regions 有权具有正，负磁场区结结构的混合半导体 - 铁磁体器件公开(公告)号：US07872321B2
公开(公告)日：2011-01-18
申请号：US11557326
申请日：2006-11-07
申请人： Kyung-Ho Shin , Jim-Ki Hong , Sung-Jung Joo , Kung-Won Rhie
发明人： Kyung-Ho Shin , Jim-Ki Hong , Sung-Jung Joo , Kung-Won Rhie
IPC分类号： H01L29/82
CPC分类号： H01L43/06 , G01R33/07 , G01R33/095 , H01L43/065 , H01L43/08
摘要： A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.
摘要翻译： 混合半导体 - 铁磁体器件是具有沉积在半导体（InAs）二维电子上的微磁体（Co）的器件，并且使用由微型磁体产生的杂散场具有正和负磁场区域的结结构。 在混合半导体 - 铁磁体器件中测量的磁阻具有不对称的霍尔电阻分布，并且其磁阻的变化非常大。 测量数据与使用扩散模式和弹道模型的计算结果非常一致。
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公开(公告)号：US08329478B2
公开(公告)日：2012-12-11
申请号：US12707047
申请日：2010-02-17
申请人： Il-Jae Shi , Byoung-Chul Min , Kyung-Ho Shin
发明人： Il-Jae Shi , Byoung-Chul Min , Kyung-Ho Shin
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/22 , H01F41/307 , H01L43/12
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁隧道结装置包括：i）具有可切换磁化方向的第一磁性层，ii）设置在第一磁性层上的非磁性层，iii）设置在非磁性层上并具有固定磁化方向的第二磁性层，iv） 设置在所述第二磁性层上的氧化防止层，v）设置在所述防氧化层上的第三磁性层，并且通过与所述第二磁性层的磁耦合来固定所述第二磁性层的磁化方向，以及vi）反铁磁层 设置在第三磁性层上并固定第三磁性层的磁化方向。
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公开(公告)号：US06800177B2
公开(公告)日：2004-10-05
申请号：US10369534
申请日：2003-02-21
申请人： Kyung-Ho Shin , Steven Kim
发明人： Kyung-Ho Shin , Steven Kim
IPC分类号： C23C1434
CPC分类号： H01J37/3414 , C23C14/0605 , C23C14/34 , H01J37/34
摘要： An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.
摘要翻译： 在本发明中公开了一种用于制造碳薄膜的装置和方法。 该装置包括：真空室，其中安装有基板，位于真空室内的溅射靶，面向基板的真空室;位于真空室内的铯供应单元，其形状为屏蔽物至目标周围，并将铯蒸气供应到 通过多个开口的溅射靶的表面，以及围绕铯供应单元并将铯供应单元保持在恒定压力的加热丝。
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4.发明授权Electromagnetic sensor element and methods and apparatus for making and using same 失效电磁传感器元件及其制造和使用的方法和装置
公开(公告)号：US5029291A
公开(公告)日：1991-07-02
申请号：US506775
申请日：1990-04-10
CPC分类号： G08B13/2408 , G08B13/2411 , G08B13/2437 , G08B13/244 , G08B13/2442 , G08B13/2471 , G08B13/2474 , G08B13/2488 , H01F1/15316 , H01F1/15341 , H01F1/0009 , Y10S428/90
摘要： A novel sensor element having low magnetic coercivity and an asymmetric hysteresis characteristic is formed by heating a strip of cobalt alloy in an exidizing atmosphere to form an oxide coating thereon and then the strip is cooled in the presence of a magnetic field of about 0.3 oersteds along its length. The strip is detected by subjecting it to an alternating magnetic interrogation field and passing the resulting magnetic disturbances through signal processing circuits which select pulses produced only once in each interrogation field cycle. The element is deactivated by subjecting it to a magnetic field which eliminates its asymmetry.
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公开(公告)号：US20070296406A1
公开(公告)日：2007-12-27
申请号：US11718389
申请日：2005-10-28
申请人： Kyung-Ho Shin , Nguyen Hoany Yen , Hyun-Jung Yi
发明人： Kyung-Ho Shin , Nguyen Hoany Yen , Hyun-Jung Yi
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/15 , H01F10/3259
摘要： The present invention provides for a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device of the present invention provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.
摘要翻译： 本发明提供了一种电流感应开关磁阻器件，其包括由第一铁磁层，非铁磁层和第二铁磁层组成的磁性多层，其中第一铁磁层具有上电极，第二铁磁层由反铁磁体 ，其中所述反铁磁体在其下部包含下电极，并且所述第二铁磁层内嵌有纳米氧化物层。 优选使下电极的至少一部分与第二铁磁层接触。 本发明的磁阻装置为磁化反转提供了较低的临界电流（Ic），并具有增加的电阻。
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公开(公告)号：US06848169B2
公开(公告)日：2005-02-01
申请号：US10145167
申请日：2002-05-13
申请人： Kyung-Ho Shin , Woo-Young Lee , Young-Joon Park , Kyung-Il Lee , Jae-Geun Ha
发明人： Kyung-Ho Shin , Woo-Young Lee , Young-Joon Park , Kyung-Il Lee , Jae-Geun Ha
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/307 , H01L43/12 , Y10T29/49044
摘要： A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.
摘要翻译： 磁性隧道结的制造方法包括以下步骤：形成具有第一磁性层的磁性隧道结，形成在第一磁性层的上表面的隧道势垒和形成在第一磁性层的上表面的第二磁性层 隧道屏障 并在200〜600℃的温度下快速热处理接头5秒〜10分钟，使隧道势垒中的氧再分配，使隧道势垒与磁性层之间的界面均匀。 通过快速热退火可以提高磁隧道结的隧道磁阻和热稳定性。
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公开(公告)号：US20110084347A1
公开(公告)日：2011-04-14
申请号：US12707047
申请日：2010-02-17
申请人： Il-Jae Shin , Byoung-Chul Min , Kyung-Ho Shin
发明人： Il-Jae Shin , Byoung-Chul Min , Kyung-Ho Shin
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/22 , H01F41/307 , H01L43/12
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁隧道结装置包括：i）具有可切换磁化方向的第一磁性层，ii）设置在第一磁性层上的非磁性层，iii）设置在非磁性层上并具有固定磁化方向的第二磁性层，iv） 设置在所述第二磁性层上的氧化防止层，v）设置在所述防氧化层上的第三磁性层，并且通过与所述第二磁性层的磁耦合来固定所述第二磁性层的磁化方向，以及vi）反铁磁层 设置在第三磁性层上并固定第三磁性层的磁化方向。
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公开(公告)号：US07626857B2
公开(公告)日：2009-12-01
申请号：US11718389
申请日：2005-10-28
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/15 , H01F10/3259
摘要： Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.
摘要翻译： 提供了一种电流感应开关磁阻器件，包括由第一铁磁层，非铁磁层和第二铁磁层组成的磁性多层，其中第一铁磁层具有上电极，第二铁磁层由反铁磁体固定，其中， 反铁磁体在其下部包含下电极，第二铁磁层埋设有纳米氧化物层。 优选使下电极的至少一部分与第二铁磁层接触。 磁阻器件为磁化反转提供较低的临界电流（Ic），并具有增加的电阻。
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公开(公告)号：US06228515B1
公开(公告)日：2001-05-08
申请号：US09175475
申请日：1998-10-20
申请人： Kyung-Ho Shin , Taek-Dong Lee , Soo-Youl Hong
发明人： Kyung-Ho Shin , Taek-Dong Lee , Soo-Youl Hong
IPC分类号： G11B564
CPC分类号： G11B5/732 , G11B5/7325
摘要： The present invention relates to an underlayer for use in a high density magnetic recording media. More particularly, the invention relates to an underlayer for use in a high density magnetic recording media comprising A1Pd or CoTi intermetallic compound having B2 crystal structure, or Co50Ti50-xMxmetal alloy in which Ti in CoTi intermetallic compound is partly substituted by other substitutional elements while maintaining its B2 crystal structure, or CoTi/Cr of a double thin film structure in which a Cr seed layer is introduced. The underlayer provided by the present invention has a crystal structure and microstructure suitable for a high density magnetic recording media, which makes a good texture structure with a Co-based magnetic layer deposited thereon and shows fine grain size distribution, high coercity and high coercity squareness.
摘要翻译： 本发明涉及一种用于高密度磁记录介质的底层。 更具体地说，本发明涉及一种用于包含具有B2晶体结构的AlPd或CoTi金属间化合物的高密度磁记录介质的底层，或CoTiTi-xM x金属合金，其中CoTi金属间化合物中的Ti部分地被其它取代元素取代，同时保持 其B2晶体结构，或其中引入Cr种子层的双重薄膜结构的CoTi / Cr。由本发明提供的底层具有适合于高密度磁记录介质的晶体结构和微结构，这使得良好 纹理结构，其上沉积有Co基磁性层，并显示出细小的粒度分布，高强度和高强度矩形度。
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10.发明授权Multiple pulse responder and detection system and method of making and using same 失效多脉冲响应器和检测系统及其制作和使用方法
公开(公告)号：US5304983A
公开(公告)日：1994-04-19
申请号：US803330
申请日：1991-12-04
申请人： Peter Y. Zhou , John Dunn , Charles D. Graham , Kyung-Ho Shin
发明人： Peter Y. Zhou , John Dunn , Charles D. Graham , Kyung-Ho Shin
CPC分类号： G08B13/2408 , G08B13/2442 , G08B13/2471
摘要： A responder for electronic article surveillance apparatus is made by subjecting a plurality of magnetizable elements to heating in the presence of a magnetic field and maintaining the field at a different intensity for each element as it is cooled to provide different magnetic characteristics so that when the responder is subjected to a cyclically varying magnetic interrogation field its several elements produce spaced apart pulses in each cycle.
摘要翻译： 电子物品监视装置的响应者是通过在存在磁场的情况下对多个可磁化元件进行加热而制成的，并且在冷却时将该场保持不同的强度，以提供不同的磁特性，使得当响应者 经受周期性变化的磁询问场，其几个元件在每个周期中产生间隔开的脉冲。
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