公开(公告)号：US20160308012A1

公开(公告)日：2016-10-20

申请号：US15059673

申请日：2016-03-03

申请人： Jae-yeol Song ,  Wan-don Kim ,  Sang-jin Hyun ,  Jin-wook Lee ,  Kee-sang Kwon ,  Ki-hyung Ko ,  Sung-woo Myung

发明人： Jae-yeol Song ,  Wan-don Kim ,  Sang-jin Hyun ,  Jin-wook Lee ,  Kee-sang Kwon ,  Ki-hyung Ko ,  Sung-woo Myung

IPC分类号： H01L29/423 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L29/42376 ,  H01L21/28088 ,  H01L21/823431 ,  H01L21/823456 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.

摘要翻译： 在包括具有相对窄的宽度和相对较小的间距的栅极线的半导体器件和制造该半导体器件的方法中，所述半导体器件包括具有鳍式有源区的衬底，覆盖上表面的栅极绝缘层 翅片型有源区的侧面以及覆盖翅片型有源区的上表面和两侧的鳍型有源区延伸并相交的栅极线，栅极线位于栅极绝缘层上 其特征在于，所述栅极线的上表面的与所述栅极线的延伸方向垂直的截面的中心部分具有凹形。