公开(公告)号：US20180082820A1

公开(公告)日：2018-03-22

申请号：US15599552

申请日：2017-05-19

Applicant: Yongseok JUNG ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

Inventor： Yongseok JUNG ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

IPC: H01J37/302 ,  G06F17/50 ,  G01Q30/06 ,  G03F1/36

CPC classification number: H01J37/3026 ,  G01Q30/06 ,  G03F1/36 ,  G03F1/72 ,  G06F17/50 ,  G06F17/5081 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.

公开(公告)号：US09952502B2

公开(公告)日：2018-04-24

申请号：US14993237

申请日：2016-01-12

Applicant: Hwanchul Jeon ,  Munja Kim ,  Sungwon Kwon ,  Byunggook Kim ,  Roman Chalykh ,  Yongseok Jung ,  Jaehyuck Choi

Inventor： Hwanchul Jeon ,  Munja Kim ,  Sungwon Kwon ,  Byunggook Kim ,  Roman Chalykh ,  Yongseok Jung ,  Jaehyuck Choi

IPC: G03F1/62 ,  G03F1/64

CPC classification number: G03F1/64 ,  G03F1/62

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

公开(公告)号：US20160334698A1

公开(公告)日：2016-11-17

申请号：US14993237

申请日：2016-01-12

Applicant: Hwanchul JEON ,  Munja KIM ,  Sungwon KWON ,  Byunggook KIM ,  Roman CHALYKH ,  Yongseok JUNG ,  Jaehyuck CHOI

Inventor： Hwanchul JEON ,  Munja KIM ,  Sungwon KWON ,  Byunggook KIM ,  Roman CHALYKH ,  Yongseok JUNG ,  Jaehyuck CHOI

IPC: G03F1/64

CPC classification number: G03F1/64 ,  G03F1/62

Abstract: A pellicle for lithography processes, including extreme ultraviolet (EUV) lithography may mitigate thermal accumulation in a membrane of the pellicle. The pellicle includes a membrane and at least one thermal buffer layer on at least one surface of the membrane. An emissivity of the thermal buffer layer may be greater than an emissivity of the membrane. A carbon content of the thermal buffer layer may be greater than a carbon content of the membrane. Multiple thermal buffer layers may be on separate surfaces of the membrane, and the thermal buffer layers may have different properties. A capping layer may be on at least one thermal buffer layer, and the capping layer may include a hydrogen resistant material. A thermal buffer layer may extend over some or all of a surface of the membrane. A thermal buffer layer may be between at least two membranes.

Abstract translation: 用于光刻工艺的防护薄膜，包括极紫外（EUV）光刻术可以减轻防护薄膜中的热积聚。 防护薄膜组件包括膜和膜的至少一个表面上的至少一个热缓冲层。 热缓冲层的发射率可以大于膜的发射率。 热缓冲层的碳含量可以大于膜的碳含量。 多个热缓冲层可以在膜的分开的表面上，并且热缓冲层可以具有不同的性质。 封盖层可以在至少一个热缓冲层上，并且封盖层可以包括耐氢材料。 热缓冲层可以在膜的一些或全部表面上延伸。 热缓冲层可以在至少两个膜之间。

公开(公告)号：US10224178B2

公开(公告)日：2019-03-05

申请号：US15599552

申请日：2017-05-19

Applicant: Yongseok Jung ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

Inventor： Yongseok Jung ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

IPC: G06F17/50 ,  G03F1/36 ,  H01J37/302 ,  G01Q30/06 ,  G03F1/72

Abstract: A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.