公开(公告)号：US5711812A

公开(公告)日：1998-01-27

申请号：US469401

申请日：1995-06-06

申请人： David LeRoy Chapek ,  Susan Benjamin Felch ,  Michael William Kissick ,  Shamim Muhammad Malik ,  Tienyu Terry Sheng

发明人： David LeRoy Chapek ,  Susan Benjamin Felch ,  Michael William Kissick ,  Shamim Muhammad Malik ,  Tienyu Terry Sheng

IPC分类号： H01J37/317 ,  C23C14/48 ,  H01J37/32 ,  H01L21/22 ,  H01L21/265 ,  C23C16/00

CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/32697

摘要： An apparatus for improving dose uniformity in the PLAsma Doping (PLAD) ion implantation of a target material is described. By providing means for simultaneously biasing both the electrode, upon which the target is disposed, and a separately biasable concentric structure introduced about the electrode and sufficiently close to the target, together with means for adjustable bias variation between the electrode and the structure one can sufficiently adjust the shape of the implantation plasma, e.g. induced electric field and plasma sheath thickness, in order to effectively provide a uniform dose distribution during PLAD ion implantation processes.

摘要翻译： 描述了用于改善目标材料的PLAsma掺杂（PLAD）离子注入中的剂量均匀性的装置。 通过提供用于同时偏置设置目标的电极和在电极周围引入并且足够靠近靶的单独可偏心的同心结构的装置，以及用于电极和结构之间的可调节偏置变化的装置，可以充分地 调整注入等离子体的形状，例如 感应电场和等离子体鞘厚度，以便在PLAD离子注入过程中有效提供均匀的剂量分布。