公开(公告)号：US5611888A

公开(公告)日：1997-03-18

申请号：US657586

申请日：1996-06-07

申请人： William F. Bosch ,  Helen Zhu ,  Syed A. Haider

发明人： William F. Bosch ,  Helen Zhu ,  Syed A. Haider

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116

摘要： A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.

公开(公告)号：US5626716A

公开(公告)日：1997-05-06

申请号：US537309

申请日：1995-09-29

申请人： William F. Bosch ,  Helen H. Zhu ,  Syed A. Haider

发明人： William F. Bosch ,  Helen H. Zhu ,  Syed A. Haider

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： A dry etching process for use in the manufacture of silicon integrated circuit devices uses a mixture of about eight parts neon to one part CHF.sub.3 (Freon 23) to form the etching plasma. The process etches doped oxides of silicon, such as BPSG and BPTEOS, in preference to undoped oxides of silicon, silicon nitride, silicides and silicon.

摘要翻译： 用于制造硅集成电路器件的干蚀刻工艺使用大约八分之一氖与一部分CHF 3（氟利昂23）的混合物来形成蚀刻等离子体。 该工艺优先考虑硅，氮化硅，硅化物和硅的未掺杂氧化物掺杂掺杂的硅氧化物，如BPSG和BPTEOS。