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公开(公告)号:US11673798B2
公开(公告)日:2023-06-13
申请号:US17084389
申请日:2020-10-29
Inventor: Gabriel Fernando Puebla Hellmann , Diego Monserrat Lopez , Ute Drechsler , Marcel Mayor , Emanuel Marc Löertscher
CPC classification number: B81C1/00119 , B01L3/502707 , B01L3/502715 , B81B1/002 , B01L2200/12 , B01L2300/12 , B01L2300/168 , B81B2201/058 , B81B2203/0353 , B81B2203/04 , B81C2201/0132 , B81C2201/0159 , B81C2201/0178
Abstract: A device includes a first layer of an electrically insulating material and a second layer of a non-electrically insulating material (e.g., semiconductor or electrically conductive) extending on the first layer. The second layer is structured so as to define opposite, lateral walls of a microchannel, a bottom wall of which is defined by an exposed surface of the first layer. The second layer is further structured to form one or more electrical insulation barriers; each barrier includes a line of through holes, each surrounded by an oxidized region of the material of the second layer. The through holes alternate with oxidized portions of the oxidized region along the line. Each barrier extends, as a whole, laterally across the second layer up to one of the lateral walls and delimits two sections of the second layer on each side of the barrier and on a same side of the microchannel.
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公开(公告)号:US20220135399A1
公开(公告)日:2022-05-05
申请号:US17084389
申请日:2020-10-29
Inventor: Gabriel Fernando Puebla Hellmann , Diego Monserrat Lopez , Ute Drechsler , Marcel Mayor , Emanuel Marc Löertscher
Abstract: A device includes a first layer of an electrically insulating material and a second layer of a non-electrically insulating material (e.g., semiconductor or electrically conductive) extending on the first layer. The second layer is structured so as to define opposite, lateral walls of a microchannel, a bottom wall of which is defined by an exposed surface of the first layer. The second layer is further structured to form one or more electrical insulation barriers; each barrier includes a line of through holes, each surrounded by an oxidized region of the material of the second layer. The through holes alternate with oxidized portions of the oxidized region along the line. Each barrier extends, as a whole, laterally across the second layer up to one of the lateral walls and delimits two sections of the second layer on each side of the barrier and on a same side of the microchannel.
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