公开(公告)号：US20120238043A1

公开(公告)日：2012-09-20

申请号：US13414062

申请日：2012-03-07

申请人： Misato SAKAMOTO ,  Yoshitake KATOU ,  Youichi YAMAMOTO ,  Takashi KYOUNO ,  Chikara YAMAMOTO ,  Terukazu MOTOSAWA ,  Mitsuo MAEDA ,  Hiroshi ITOU

发明人： Misato SAKAMOTO ,  Yoshitake KATOU ,  Youichi YAMAMOTO ,  Takashi KYOUNO ,  Chikara YAMAMOTO ,  Terukazu MOTOSAWA ,  Mitsuo MAEDA ,  Hiroshi ITOU

IPC分类号： H01L21/66

CPC分类号： H01L21/67253 ,  H01L21/67109 ,  H01L21/6875 ,  Y10S438/974

摘要： With the stage kept in an as-heated state, the semiconductor wafer is placed over the stage (step S10). Then, with the elapse of first time, a controller causes a pressure inside a vacuum chamber to rise to a second pressure higher than a first pressure (step S40). After the semiconductor wafer is placed over the stage, a pressure difference between a pressure inside the vacuum chamber and a pressure inside the adsorption port is set to a minimum value at which the semiconductor wafer is not allowed to slide over the protrusions. Further, in step S40 as well, the pressure difference is kept at the minimum value at which the semiconductor wafer is not allowed to slide over the protrusions.

摘要翻译： 在阶段保持处于加热状态的情况下，将半导体晶片放置在台上（步骤S10）。 然后，随着第一次经过，控制器使真空室内的压力上升到高于第一压力的第二压力（步骤S40）。 在半导体晶片放置在平台上之后，将真空室内部的压力与吸附口内的压力之间的压力差设定为不允许半导体晶片在突起上滑动的最小值。 此外，在步骤S40中，将压差保持在不允许半导体晶片在突起上滑动的最小值。

公开(公告)号：US08987148B2

公开(公告)日：2015-03-24

申请号：US13414062

申请日：2012-03-07

申请人： Misato Sakamoto ,  Yoshitake Katou ,  Youichi Yamamoto ,  Takashi Kyouno ,  Chikara Yamamoto ,  Terukazu Motosawa ,  Mitsuo Maeda ,  Hiroshi Itou

发明人： Misato Sakamoto ,  Yoshitake Katou ,  Youichi Yamamoto ,  Takashi Kyouno ,  Chikara Yamamoto ,  Terukazu Motosawa ,  Mitsuo Maeda ,  Hiroshi Itou

IPC分类号： H01L21/324 ,  H01L21/477 ,  H01L21/42 ,  H01L21/26 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67253 ,  H01L21/67109 ,  H01L21/6875 ,  Y10S438/974

摘要： With a stage kept in an as-heated state, a semiconductor wafer is placed over the stage. Then, with the elapse of a first time, a controller causes a pressure inside a vacuum chamber to rise to a second pressure higher than a first pressure (step S40). After the semiconductor wafer is placed over the stage, a pressure difference between a pressure inside the vacuum chamber and a pressure inside an adsorption port is set to a minimum value at which the semiconductor wafer is not allowed to slide over protrusions. Further, in step S40 as well, the pressure difference is kept at the minimum value at which the semiconductor wafer is not allowed to slide over the protrusions.

摘要翻译： 在阶段保持处于加热状态的情况下，将半导体晶片放置在平台上。 然后，随着第一次经过，控制器使真空室内的压力上升到高于第一压力的第二压力（步骤S40）。 在将半导体晶片放置在载物台上之后，将真空室内的压力与吸附口内的压力之间的压力差设定为不允许半导体晶片在突起上滑动的最小值。 此外，在步骤S40中，将压差保持在不允许半导体晶片在突起上滑动的最小值。