摘要:
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.
摘要:
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.
摘要:
A cam grinding machine which includes a machine frame, a turning grinding wheel adjacent the frame, a swingable table positioned opposite to the frame, and a turnable work shaft for holding a workpiece mounted on the table. The table is controlled in the swing movement by a touch roller device mounted on the table and a master cam device mounted on the frame. The touch roller device is disposed to face and contact the master cam device so that the workpiece may be ground in correspondence to the master cam device by the grinding wheel provided on the forward side of forward and rearward swing direction of the table. The master cam device includes a driving shaft which is turned synchronously with the turning of the work shaft and is adjustable in its turning phase in relation to the work shaft.