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    Compound semiconductor epitaxial substrate and method for manufacturing the same
    1.
    发明授权
    Compound semiconductor epitaxial substrate and method for manufacturing the same 有权
    复合半导体外延基板及其制造方法

    公开(公告)号：US07732836B2

    公开(公告)日：2010-06-08

    申请号：US10540513

    申请日：2003-12-19

    申请人： Takenori Osada ,  Tsuyoshi Nakano ,  Takayuki Inoue

    发明人： Takenori Osada ,  Tsuyoshi Nakano ,  Takayuki Inoue

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7785

    摘要： In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers containing n-type impurities as electron supplying layers 6 and 12, the channel layer 9 has an electron mobility at room temperature of 8300 cm2/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layer 9 to 0.25 or more and optimizing the In composition and the thickness of the channel layer 9. GaAs layers 8 and 10 having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer 9.

    摘要翻译： 在用于包含InGaAs层作为沟道层9的应变通道高电子迁移率场效应晶体管和包含n型杂质作为电子供给层6和12的AlGaAs层的化合物半导体外延基板中，沟道层9具有电子 通过将构成沟道层9的InGaAs层的In组成调整至0.25以上，使In的组成和沟道层9的厚度最优化，室温下的迁移率为8300cm2 / V·s以上。GaAs层8,10 各自的厚度为4nm以上的层叠体可分别与沟道层9的上表面和底面接触。

    High electron mobility epitaxial substrate
    2.
    发明授权
    High electron mobility epitaxial substrate 有权
    高电子迁移率外延衬底

    公开(公告)号：US07291873B2

    公开(公告)日：2007-11-06

    申请号：US10540514

    申请日：2003-12-19

    申请人： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    发明人： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    IPC分类号： H01L31/00

    CPC分类号： H01L29/7785

    摘要： A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.

    摘要翻译： 一种用于应变通道高电子迁移率场效应晶体管的化合物半导体外延基板，包括作为应变通道层6的InGaAs层和含有n型杂质的AlGaAs层作为背面侧和前侧电子供给层3和9，其中 通过优化应变通道层6的In组成和厚度，将77K处的应变通道层6的发射峰值波长设定为1030nm以上。

    Compound semiconductor epitaxial substrate and method for manufacturing the same
    4.
    发明申请
    Compound semiconductor epitaxial substrate and method for manufacturing the same 有权
    复合半导体外延基板及其制造方法

    公开(公告)号：US20060113563A1

    公开(公告)日：2006-06-01

    申请号：US10540513

    申请日：2003-12-19

    申请人： Takenori Osada ,  Tsuyoshi Nakano ,  Takayuki Inoue

    发明人： Takenori Osada ,  Tsuyoshi Nakano ,  Takayuki Inoue

    IPC分类号： H01L31/0328

    CPC分类号： H01L29/7785

    摘要： In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers containing n-type impurities as electron supplying layers 6 and 12, the channel layer 9 has an electron mobility at room temperature of 8300 cm2/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layer 9 to 0.25 or more and optimizing the In composition and the thickness of the channel layer 9. GaAs layers 8 and 10 having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer 9.

    摘要翻译： 在用于包含InGaAs层作为沟道层9的应变通道高电子迁移率场效应晶体管和包含n型杂质作为电子供给层6和12的AlGaAs层的化合物半导体外延基板中，沟道层9具有电子 通过将构成沟道层9的InGaAs层的In组成调节至0.25以上，并使沟道层9的In组成和厚度最优化，室温下的迁移率为8300cm 2 / Vs以上 。 各层厚度为4nm以上的GaAs层8,10分别与沟道层9的上表面和底面接触地层叠。

    Compound semiconductor device and process for producing the same
    5.
    发明申请
    Compound semiconductor device and process for producing the same 审中-公开
    复合半导体器件及其制造方法

    公开(公告)号：US20060131607A1

    公开(公告)日：2006-06-22

    申请号：US10546760

    申请日：2004-02-04

    申请人： Hisashi Yamada ,  Takenori Osada ,  Noboru Kukuhara

    发明人： Hisashi Yamada ,  Takenori Osada ,  Noboru Kukuhara

    IPC分类号： H01L31/109

    CPC分类号： H01L29/66318 ,  H01L29/7371

    摘要： A compound semiconductor device comprising a hetero junction bipolar transistor including a compound semiconductor substrate, and a sub-collector layer, a collector layer, a base layer and an emitter layer formed in this order as thin crystalline layers on the compound semiconductor substrate by vapor phase deposition, wherein the base layer is a thin film of a p-type compound semiconductor doped with C and no peak of a type of bonding between H and C, C2-H, is detected in infrared absorption measurement at room temperature.

    摘要翻译： 一种化合物半导体器件，包括：杂化双极晶体管，其包括化合物半导体衬底，以及副集电极层，集电极层，基极层和发射极层，依次形成为化合物半导体衬底上的薄层化合物 沉积，其中基层是掺杂有C的p型化合物半导体的薄膜，并且在室温下的红外吸收测量中没有检测到H和C之间的键合类型的峰--C2-H。

    High electron mobility epitaxial substrate
    6.
    发明申请
    High electron mobility epitaxial substrate 有权
    高电子迁移率外延衬底

    公开(公告)号：US20060076576A1

    公开(公告)日：2006-04-13

    申请号：US10540514

    申请日：2003-12-19

    申请人： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    发明人： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    IPC分类号： H01L31/0328 ,  H01L21/336

    CPC分类号： H01L29/7785

    摘要： A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.

    摘要翻译： 一种用于应变通道高电子迁移率场效应晶体管的化合物半导体外延基板，包括作为应变通道层6的InGaAs层和包含n型杂质的AlGaAs层作为背面侧和前侧电子供给层3和9，其中 通过优化应变通道层6的In组成和厚度，将77K处的应变通道层6的发射峰值波长设定为1030nm以上。

    Polysilane, its production process and starting materials therefor
    8.
    发明授权
    Polysilane, its production process and starting materials therefor 失效
    聚硅烷，其生产工艺及其原料

    公开(公告)号：US5830972A

    公开(公告)日：1998-11-03

    申请号：US629602

    申请日：1996-04-09

    申请人： Masato Ueda ,  Fumi Yamaguchi ,  Yukio Fujii ,  Isao Yahagi ,  Manabu Sasaki ,  Takenori Osada ,  Makoto Kitano ,  Yasuaki Abe

    发明人： Masato Ueda ,  Fumi Yamaguchi ,  Yukio Fujii ,  Isao Yahagi ,  Manabu Sasaki ,  Takenori Osada ,  Makoto Kitano ,  Yasuaki Abe

    IPC分类号： C08G77/60 ,  G02F1/361 ,  G03G5/07 ,  C08G77/26

    CPC分类号： C08G77/60 ,  G02F1/3615 ,  G03G5/078

    摘要： A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R.sub.1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R.sub.2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar.sub.1 represents a substituted or unsubstituted arylene group; and Ar.sub.2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.

    摘要翻译： 公开了一种聚硅烷，其主链骨架具有由通式（1）表示的重复单元：其中R 1表示取代或未取代的烷基环烷基，芳基或芳烷基; X是具有不成对电子的原子或含有不成对电子的原子的基团，并且表示由通式（2）表示的氧原子，硫原子或含氮原子的基团：其中R2表示取代的 或未取代的烷基，环烷基，芳基或芳烷基; Ar 1表示取代或未取代的亚芳基; Ar 2表示取代或未取代的芳基，具有芳香族胺骨架或亚乙烯基团的基团; 聚硅烷的制造方法; 和作为其原料的二卤代硅烷。 聚硅烷化合物作为高分子材料具有极好的成型性，作为空穴传输材料具有较高的空穴漂移迁移率。