公开(公告)号：US5830972A

公开(公告)日：1998-11-03

申请号：US629602

申请日：1996-04-09

申请人： Masato Ueda ,  Fumi Yamaguchi ,  Yukio Fujii ,  Isao Yahagi ,  Manabu Sasaki ,  Takenori Osada ,  Makoto Kitano ,  Yasuaki Abe

发明人： Masato Ueda ,  Fumi Yamaguchi ,  Yukio Fujii ,  Isao Yahagi ,  Manabu Sasaki ,  Takenori Osada ,  Makoto Kitano ,  Yasuaki Abe

IPC分类号： C08G77/60 ,  G02F1/361 ,  G03G5/07 ,  C08G77/26

CPC分类号： C08G77/60 ,  G02F1/3615 ,  G03G5/078

摘要： A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R.sub.1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R.sub.2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar.sub.1 represents a substituted or unsubstituted arylene group; and Ar.sub.2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.

摘要翻译： 公开了一种聚硅烷，其主链骨架具有由通式（1）表示的重复单元：其中R 1表示取代或未取代的烷基环烷基，芳基或芳烷基; X是具有不成对电子的原子或含有不成对电子的原子的基团，并且表示由通式（2）表示的氧原子，硫原子或含氮原子的基团：其中R2表示取代的 或未取代的烷基，环烷基，芳基或芳烷基; Ar 1表示取代或未取代的亚芳基; Ar 2表示取代或未取代的芳基，具有芳香族胺骨架或亚乙烯基团的基团; 聚硅烷的制造方法; 和作为其原料的二卤代硅烷。 聚硅烷化合物作为高分子材料具有极好的成型性，作为空穴传输材料具有较高的空穴漂移迁移率。

公开(公告)号：US06696588B2

公开(公告)日：2004-02-24

申请号：US10062665

申请日：2002-02-05

申请人： Masato Ueda ,  Isao Yahagi ,  Makoto Kitano

发明人： Masato Ueda ,  Isao Yahagi ,  Makoto Kitano

IPC分类号： C07F708

CPC分类号： H05B33/12 ,  C07F7/1804 ,  C09K11/06 ,  H01L51/0042 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0094 ,  H01L51/5206 ,  H01L2251/308 ,  Y10T428/31663

摘要： The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom. An organic electroluminescence device having excellent mechanical and electric contact between an electrode and an organic layer is also provided by treating the surface of an anode with using a surface-treating agent comprising the above silicon-containing compound.

摘要翻译： 本发明提供了一种基于标准氢电极具有0.3至1.5V的氧化电位的新型含硅化合物，其中至少一个烷氧基与硅原子键合，并且至少一个芳族胺基也与 硅原子。通过使用包含上述含硅化合物的表面处理剂处理阳极的表面，还提供了在电极和有机层之间具有优异的机械和电接触的有机电致发光器件。

公开(公告)号：US06369258B1

公开(公告)日：2002-04-09

申请号：US09033084

申请日：1998-03-02

申请人： Masato Ueda ,  Isao Yahagi ,  Makoto Kitano

发明人： Masato Ueda ,  Isao Yahagi ,  Makoto Kitano

IPC分类号： C07F708

CPC分类号： H05B33/12 ,  C07F7/1804 ,  C09K11/06 ,  H01L51/0042 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0094 ,  H01L51/5206 ,  H01L2251/308 ,  Y10T428/31663

摘要： The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom. An organic electroluminescence device having excellent mechanical and electric contact between an electrode and an organic layer is also provided by treating the surface of an anode with using a surface-treating agent comprising the above silicon-containing compound.

摘要翻译： 本发明提供了一种基于标准氢电极具有0.3至1.5V的氧化电位的新型含硅化合物，其中至少一个烷氧基与硅原子键合，并且至少一个芳族胺基也与 硅原子。通过使用包含上述含硅化合物的表面处理剂处理阳极的表面，还提供了在电极和有机层之间具有优异的机械和电接触的有机电致发光器件。

公开(公告)号：US06949324B2

公开(公告)日：2005-09-27

申请号：US10329992

申请日：2002-12-27

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

IPC分类号： C08G77/38 ,  C09D183/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

公开(公告)号：US07439010B2

公开(公告)日：2008-10-21

申请号：US11124121

申请日：2005-05-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03F7/039

CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

摘要翻译： 具有由下式（1）表示的碱溶性硅氧烷聚合物的正型抗蚀剂组合物，感光性化合物和由正型抗蚀剂组合物形成的1μm厚的抗蚀剂膜，其具有对i的透射率的5％至60％ 线辐射; 在式（1）中，R 1和R 2表示一价有机基团，可以相同或不同; “A”是具有至少一个酚羟基的由下式（2）表示的基团; 和“a”，“b”和“c”满足下列关系： 在式（2）中，a + b + c = 1，R 3，R 4，R 5和R 5表示氢 原子和一价有机基团，并且可以相同或不同，“m”表示整数，“n”表示1至5的整数。优选地，0.25 <= a <= 0.60，0 <= c < 0.25。 该组合物优选用于进行氧等离子体蚀刻的抗蚀剂膜。

公开(公告)号：US20050221227A1

公开(公告)日：2005-10-06

申请号：US11124121

申请日：2005-05-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Shoichi Suda ,  Fumi Yamaguchi ,  Isao Yahagi ,  Michitaka Morikawa

IPC分类号： C08G77/38 ,  C09D183/06 ,  G03F7/004 ,  G03F7/023 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/0233 ,  C09D183/06 ,  G03F7/0045 ,  G03F7/0757

摘要： A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 μm thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25≦a≦0.60, and 0≦c≦0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

公开(公告)号：US20120273786A1

公开(公告)日：2012-11-01

申请号：US13503973

申请日：2010-10-27

申请人： Isao Yahagi

发明人： Isao Yahagi

IPC分类号： C09D5/00 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/47

CPC分类号： H01L51/107 ,  C09D5/008 ,  H01L51/0545

摘要： The problem to be solved by the present invention is to provide such an organic surface protective layer composition that a thin and uniform protective layer can be formed on a surface of an organic layer, that the formed protective layer can easily be removed by etching, and that it can inhibit the alteration of the organic compound presenting in the surface of the organic layer exposed by the etching. Means for solving the problem is an organic surface protective layer composition containing (A) a metal alkoxide, (B) a stabilizer for the metal alkoxide and (C) an organic solvent capable of dissolving the metal alkoxide.

摘要翻译： 本发明要解决的问题是提供一种有机表面保护层组合物，其可以在有机层的表面上形成薄且均匀的保护层，所形成的保护层可以通过蚀刻容易地除去，以及 可以抑制通过蚀刻暴露的有机层的表面中存在的有机化合物的变化。 解决问题的方法是含有（A）金属醇盐，（B）金属醇盐的稳定剂和（C）能够溶解金属醇盐的有机溶剂的有机表面保护层组合物。

公开(公告)号：US20120053287A1

公开(公告)日：2012-03-01

申请号：US13144237

申请日：2010-01-07

申请人： Isao Yahagi

发明人： Isao Yahagi

IPC分类号： C08L35/02 ,  C08L35/08 ,  C08L41/00

CPC分类号： H01L51/107 ,  C08G18/728 ,  C08G18/8116 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  H01L51/0541 ,  H01L51/0545

摘要： The problem to be solved is to provide a resin composition for an organic thin film transistor insulating layer which can cross-link without being subjected to a treatment at a high temperature for a long time to form an insulating layer excellent in surface adhesion property. The solving means is a resin composition for an organic thin film transistor insulating layer comprising (A) a macromolecular compound comprising a repeating unit having a photosensitive group s linked through a urea bond or a urethane bond, (B) a curing agent and (C) an organic solvent.

摘要翻译： 要解决的问题是提供一种有机薄膜晶体管绝缘层的树脂组合物，该树脂组合物可以长时间在高温下进行交联而形成表面粘附性优异的绝缘层。 解决方法是一种有机薄膜晶体管绝缘层的树脂组合物，其包含（A）包含具有通过脲键或氨基甲酸酯键连接的感光基团的重复单元的高分子化合物，（B）固化剂和（C ）有机溶剂。

公开(公告)号：US20110193071A1

公开(公告)日：2011-08-11

申请号：US13060456

申请日：2009-08-25

申请人： Isao Yahagi

发明人： Isao Yahagi

IPC分类号： H01L51/52 ,  H01L51/10 ,  C08F222/22

CPC分类号： C08F220/22 ,  C08F12/20 ,  C08F12/24 ,  C08F212/08 ,  C08F212/10 ,  C08F212/14 ,  C08F220/18 ,  C08F220/36 ,  C08F2220/343 ,  C08K5/0025 ,  C08L25/18 ,  C08L2205/02 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  C08L2666/04

摘要： The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1′), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.

摘要翻译： 本发明的主题是提供具有小滞后的有机薄膜晶体管。 用于解决问题的方法是一种有机薄膜晶体管栅极绝缘层的树脂组合物，其包含（A）大分子，其包含至少一种选自由式（1）表示的重复单元，重复单元 由式（1'）表示的重复单元和式（2）表示的重复单元，其分子中含有2个以上的第一官能团，其中，第一官能团是通过电磁波或热而产生的官能团 与活性氢反应的第二官能团，和（B）选自每个分子中含有两个或更多个活性氢的低分子化合物和每个分子中含有两个或更多个活性氢的大分子的至少一种化合物。

公开(公告)号：US20120235148A1

公开(公告)日：2012-09-20

申请号：US13395771

申请日：2010-09-15

申请人： Isao Yahagi

发明人： Isao Yahagi

IPC分类号： H01L33/08 ,  B05D3/06 ,  C08F12/08 ,  C08F14/18 ,  C08F14/14

CPC分类号： H01L51/052 ,  C08F12/18 ,  C08F12/20 ,  C08F212/08 ,  C08F212/14 ,  C09D125/18 ,  H01L51/0541 ,  H01L51/0545

摘要： A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group.

摘要翻译： 本发明的问题在于提供一种有机薄膜晶体管绝缘层材料，其能够在不进行高温处理的情况下形成交联结构，并且能够使有机薄膜晶体管的绝对值小 当阈值电压（Vth）用于形成栅绝缘层时。 解决问题的手段是包括具有含有氟原子的重复单元的高分子化合物和具有光二聚反应性基团的重复单元的有机薄膜晶体管绝缘层材料。