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    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES
    1.
    发明申请
    METHOD FOR PRODUCING TRICHLOROSILANE WITH REDUCED BORON COMPOUND IMPURITIES 审中-公开
    用减少硼硼化合物生产三氯硅烷的方法

    公开(公告)号：US20120082609A1

    公开(公告)日：2012-04-05

    申请号：US12896116

    申请日：2010-10-01

    申请人： Takeshi Kamei ,  Laura Prine ,  Takamasa Yasukawa ,  Yasuhiro Oda

    发明人： Takeshi Kamei ,  Laura Prine ,  Takamasa Yasukawa ,  Yasuhiro Oda

    IPC分类号： C01B33/107

    CPC分类号： C01B33/10763 ,  C01B35/02 ,  C01B35/026

    摘要： The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

    摘要翻译： 本发明涉及一种具有减少硼化合物量的三氯硅烷的制备方法。 该方法包括：（A）在流化床反应器中使冶金级硅与氯化氢反应，生成包含三氯硅烷的反应气体; （B）首先蒸馏反应气体，用于分离第一蒸气馏分和第一残余馏分，将蒸馏塔顶部的蒸馏温度设定在约三氯硅烷的沸点和约四氯硅烷的沸点之间，并将第一蒸气 馏分至第二蒸馏塔; （C）通过将蒸馏塔顶部的蒸馏温度设定在约二氯硅烷的沸点和约三氯硅烷的沸点之间，对三氯硅烷和包括硼化合物的第二蒸气馏分进行第二次蒸馏; 和（D）将第二蒸气馏分反馈到流化床反应器。