公开(公告)号：US20050094138A1

公开(公告)日：2005-05-05

申请号：US11012940

申请日：2004-12-15

申请人： Talat Hasan

发明人： Talat Hasan

IPC分类号： G01N21/956 ,  G01N21/00 ,  G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  H01L21/00 ,  H01L21/02 ,  H01L21/66 ,  G01N21/88

CPC分类号： H01L21/67276 ,  G01N21/211 ,  G01N21/47 ,  G01N21/9501

摘要： Systems and methods are disclosed for measuring semiconductor wafers in a fabrication process using one or more of a plurality of measurement systems. A measurement system cluster is provided having a plurality of such measurement systems, along with a system for transferring wafers to one or more of the measurement systems according to one or more selection criteria. Measurement systems may be selected for use based on availability and throughput capabilities, whereby overall system throughput and efficiency may be improved within the required accuracy capabilities required for measuring process parameters associated with the wafers.

摘要翻译： 公开了用于在使用多个测量系统中的一个或多个的制造过程中测量半导体晶片的系统和方法。 提供了具有多个这样的测量系统的测量系统集群，以及根据一个或多个选择标准将晶片传送到一个或多个测量系统的系统。 可以基于可用性和吞吐量能力来选择测量系统使用，由此可以在与晶片相关联的测量工艺参数所需的所需精度能力内提高整个系统的吞吐量和效率。

公开(公告)号：US6112595A

公开(公告)日：2000-09-05

申请号：US420217

申请日：1999-10-18

申请人： Fred E. Stanke ,  Butrus T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

发明人： Fred E. Stanke ,  Butrus T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

IPC分类号： G01N29/04 ,  G01N29/07 ,  G01N29/46 ,  G01N29/18

CPC分类号： G01N29/46 ,  G01N29/041 ,  G01N29/07 ,  G01N29/449 ,  G01N2291/02854 ,  G01N2291/02881 ,  G01N2291/0423 ,  G01N2291/0427 ,  G01N2291/044 ,  G01N2291/102 ,  G01N2291/2698

摘要： An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

摘要翻译： 公开了用于表征可支持声波的半导体晶片或其它测试对象的装置和方法。 源和接收换能器被配置成各种布置以分别激发和检测要表征的晶片中的声波（例如，兰姆波）。 表示检测到的波的信号被数字处理并用于计算与晶片中的波速相关的测量集。 提供了表征灵敏度，其描述不同的感兴趣的晶片特性随着声波传播的变化而变化。 使用在所有晶片特性已知的建立时间计算的表征灵敏度和测量集，以及当至少一个特性未知时的一个或多个处理时间，可以确定设置和处理时间之间的晶片特性的扰动。 通过晶片校准程序改进表征精度，其中针对每个被表征的晶片确定对已知条件的测量偏移。 公开了一种用于校正由于相对于晶片的优选结晶轴的波传播方向引起的声波速度的各向异性的装置和技术。 还描述了一种用于使用单个换能器来测量晶片温度的装置和技术，其温度与晶片的温度和可选的谐振器结构相关。 对于在夹持晶片时发生的表征步骤，描述了一种卡盘结构，其减小卡盘干扰晶片中的波的可能性。

公开(公告)号：US20060274306A1

公开(公告)日：2006-12-07

申请号：US11494924

申请日：2006-07-28

申请人： Talat Hasan

发明人： Talat Hasan

IPC分类号： G01N21/88

CPC分类号： H01L21/67276 ,  G01N21/211 ,  G01N21/47 ,  G01N21/9501

摘要： Systems and methods are disclosed for measuring semiconductor wafers in a fabrication process using one or more of a plurality of measurement systems. A measurement system cluster is provided having a plurality of such measurement systems, along with a system for transferring wafers to one or more of the measurement systems according to one or more selection criteria. Measurement systems may be selected for use based on availability and throughput capabilities, whereby overall system throughput and efficiency may be improved within the required accuracy capabilities required for measuring process parameters associated with the wafers.

公开(公告)号：US5996415A

公开(公告)日：1999-12-07

申请号：US847144

申请日：1997-04-30

申请人： Fred E. Stanke ,  Butrus T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

发明人： Fred E. Stanke ,  Butrus T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

IPC分类号： G01N29/04 ,  G01N29/07 ,  G01N29/46 ,  G01N29/18

CPC分类号： G01N29/46 ,  G01N29/041 ,  G01N29/07 ,  G01N29/449 ,  G01N2291/02854 ,  G01N2291/02881 ,  G01N2291/0423 ,  G01N2291/0427 ,  G01N2291/044 ,  G01N2291/102 ,  G01N2291/2698

摘要： An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

公开(公告)号：US20060247818A1

公开(公告)日：2006-11-02

申请号：US11471992

申请日：2006-06-21

申请人： Talat Hasan

发明人： Talat Hasan

IPC分类号： G06F19/00

CPC分类号： G05B17/02 ,  G05B15/02 ,  G05B23/0216

摘要： Systems and methodologies are disclosed for generating setup information for use measuring process parameters associated with semiconductor devices. A system comprises an off-line measurement instrument to measure an unpatterned wafer and a setup information generator to generate setup information according to the unpatterned wafer measurement. The system then provides the setup information to a process measurement system for use in measuring production wafers in a semiconductor manufacturing process.

公开(公告)号：US06182510B2

公开(公告)日：2001-02-06

申请号：US09568659

申请日：2000-05-10

申请人： Fred E. Stanke ,  B. T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

发明人： Fred E. Stanke ,  B. T. Khuri-Yakub ,  Hung Pham ,  Talat Hasan

IPC分类号： G01N2918

CPC分类号： G01N29/46 ,  G01N29/041 ,  G01N29/07 ,  G01N29/449 ,  G01N2291/02854 ,  G01N2291/02881 ,  G01N2291/0423 ,  G01N2291/0427 ,  G01N2291/044 ,  G01N2291/102 ,  G01N2291/2698

摘要： An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

摘要翻译： 公开了用于表征可支持声波的半导体晶片或其它测试对象的装置和方法。 源和接收换能器被配置成各种布置以分别激发和检测要表征的晶片中的声波（例如，兰姆波）。 表示检测到的波的信号被数字处理并用于计算与晶片中的波速相关的测量集。 提供了表征灵敏度，其描述不同的感兴趣的晶片特性随着声波传播的变化而变化。 使用在所有晶片特性已知的建立时间计算的表征灵敏度和测量集，以及当至少一个特性未知时的一个或多个处理时间，可以确定设置和处理时间之间的晶片特性的扰动。 通过晶片校准程序改进表征精度，其中针对每个被表征的晶片确定对已知条件的测量偏移。 公开了一种用于校正由于相对于晶片的优选结晶轴的波传播方向引起的声波速度的各向异性的装置和技术。 还描述了一种用于使用单个换能器来测量晶片温度的装置和技术，其温度与晶片的温度和可选的谐振器结构相关。 对于在夹持晶片时发生的表征步骤，描述了一种卡盘结构，其减小卡盘干扰晶片中的波的可能性。