公开(公告)号：US6150023A

公开(公告)日：2000-11-21

申请号：US637496

申请日：1996-04-25

申请人： Tatsuhiro Yasaka ,  Takashi Nishizawa ,  Kazuo Muramatsu ,  Tsutomu Watanabe

发明人： Tatsuhiro Yasaka ,  Takashi Nishizawa ,  Kazuo Muramatsu ,  Tsutomu Watanabe

IPC分类号： C04B35/52 ,  C01B31/02 ,  H01L21/02 ,  H01L21/66 ,  H01L23/544 ,  B32B9/00

CPC分类号： H01L22/34 ,  Y10T428/24942 ,  Y10T428/30

摘要： The present invention provides a test dummy wafer used in the process for manufacturing a semiconductor device, which has more excellent etching resistance than a silicon wafer, and excellent mirror surface properties and evenness required for a substrate, and which causes no contamination source in the manufacturing process. The dummy wafer is composed of glassy carbon, and at least one side thereof is preferably polished to a mirror surface having a surface roughness Ra of not more than 0.005 .mu.m. The dummy wafer of the present invention has excellent characteristics as a dummy wafer for monitoring the thickness of a CVD film. The dummy wafer having specific electric resistance of not more than 0.1 .OMEGA..multidot.cm exhibits excellent characteristics as a dummy wafer for monitoring the thickness of a film formed by sputtering and confirming cleanliness.

摘要翻译： 本发明提供了一种用于制造半导体器件的方法的测试虚拟晶片，其具有比硅晶片更好的耐蚀刻性，以及基板所需的优异的镜面性质和均匀性，并且在制造中不产生污染源 处理。 伪晶片由玻璃碳组成，其至少一侧优选抛光至表面粗糙度Ra不大于0.005μm的镜面。 本发明的虚设晶片作为用于监测CVD膜的厚度的虚设晶片具有优异的特性。 具有不大于0.1欧姆·厘米的比电阻的伪晶片作为用于监测由溅射形成的膜的厚度并确认清洁度的虚拟晶片表现出优异的特性。