摘要:
The first object of the present invention is to provide a method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The second object of the present invention is to manufacture a monocrystalline organic semiconductor of which almost the entire region consists of a single monocrystal, by printing process.The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head. Furthermore, a shape on which a seed crystal is generated with highly efficiency in one portion of a region storing the ink and a monocrystal is grown over the almost entire region storing the ink from the shape as a starting point.
摘要:
A method for manufacturing a uniform organic semiconductor thin film consisting of single organic molecule with extremely few pinholes and of which both quality and thickness are uniform when the organic semiconductor thin film is manufactured by printing process. The uniform organic semiconductor thin film is manufactured by steps of: preparing a first ink obtained by dissolving a high concentration of the organic semiconductor in an organic solvent with high affinity for the organic semiconductor, and a second ink consisting of an organic solvent having a low affinity for the organic semiconductor; mixing the first and second inks on a substrate by simultaneously or alternately discharging the first and second inks from each ink head.
摘要:
A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.
摘要:
A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.
摘要:
Using information about the position, orientation, and shape of a crack appeared in a judged material and information about the structure of the judged material as parameters, the stress intensity factor KI of the crack is found. Based on the stress intensity factor KI, hydrogen embrittlement cracking of the judged material is judged. The crack growth rate and possibility of brittle fracture can be judged by comparing the stress intensity factor KI with the critical stress intensity factor KIH for crack initiation or the critical stress intensity factor KIC-H for brittle fracture about the temper embrittled steel which absorbs approximately 2.0 ppm hydrogen.
摘要翻译:在判断材料中出现关于裂纹的位置,取向和形状的信息,以及关于判断材料的结构的信息作为参数的信息,发现裂纹的应力强度因子K I I。 基于应力强度因子KI判断判定材料的氢脆裂纹。 裂纹扩展速率和脆性断裂的可能性可以通过将应力强度因子K I I与用于裂纹开始的临界应力强度因子K SUB>或临界应力强度 关于吸收约2.0ppm氢气的回火脆化钢的脆性断裂的因子K <! - SIPO
摘要:
Using information about the position, orientation, and shape of a crack appeared in a judged material and information about the structure of the judged material as parameters, the stress intensity factor KI of the crack is found. Based on the stress intensity factor KI, hydrogen embrittlement cracking of the judged material is judged. The crack growth rate and possibility of brittle fracture can be judged by comparing the stress intensity factor KI with the critical stress intensity factor KIH for crack initiation or the critical stress intensity factor KIC-H for brittle fracture about the temper embrittled steel which absorbs approximately 2.0 ppm hydrogen.
摘要:
An automatic chemical analyzer comprising an extractor for extracting the desired sample from a plurality of liquid samples, a measuring valve for measuring out a fixed quantity of the extracted sample, a plurality of reagent storage tanks each storing a different kind of reagent according to the analysis intended, a plurality of reagent pumps equal in number to the number of reagent storage tanks, each of said plurality of reagent pumps being connected to each of said plurality of reagent storage tanks for drawing the reagents out of the reagent storage tanks, a reaction device comprising a plurality of reaction tubes for containing the samples and reagents, a reagent selector located between the pumps and the reaction device, said selector connecting a specific reagent pump to the reaction device according to the type of analysis.