公开(公告)号：US6008083A

公开(公告)日：1999-12-28

申请号：US820930

申请日：1997-03-19

申请人： Terry J. Brabazon ,  Badih El-Kareh ,  Stuart R. Martin ,  Matthew J. Rutten ,  Carter W. Kaanta

发明人： Terry J. Brabazon ,  Badih El-Kareh ,  Stuart R. Martin ,  Matthew J. Rutten ,  Carter W. Kaanta

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L28/40 ,  H01L21/76895

摘要： A precision analog metal-metal capacitor is fabricated by forming a first capacitor plate in an insulation layer by forming a trench therein, depositing metal within the trench and planarizing the device. A thin dielectric layer is then deposited and patterned over the first capacitor plate. A second insulator is then deposited over the device and discrete openings etched therein to expose the insulation layer and first metal plate. Metal is deposited within the openings and planarized, thereby forming a contact to the first metal plate and the second metal plate of the capacitor.

摘要翻译： 通过在绝缘层中形成第一电容器板，在其中形成沟槽，在沟槽内沉积金属并使器件平坦化来制造精密模拟金属 - 金属电容器。 然后在第一电容器板上沉积并图案化薄介电层。 然后将第二绝缘体沉积在器件上并且在其中蚀刻的离散开口露出绝缘层和第一金属板。 金属沉积在开口内并平坦化，从而与电容器的第一金属板和第二金属板形成接触。

公开(公告)号：US5708559A

公开(公告)日：1998-01-13

申请号：US549450

申请日：1995-10-27

申请人： Terry J. Brabazon ,  Badih El-Kareh ,  Stuart R. Martin ,  Matthew J. Rutten ,  Carter W. Kaanta

发明人： Terry J. Brabazon ,  Badih El-Kareh ,  Stuart R. Martin ,  Matthew J. Rutten ,  Carter W. Kaanta

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01G4/20 ,  H01G4/06

CPC分类号： H01L28/40 ,  H01L21/76895

摘要： A precision analog metal-metal capacitor is fabricated by forming a first capacitor plate in an insulation layer by forming a trench therein, depositing metal within the trench and planarizing the device. A thin dielectric layer is then deposited and patterned over the first capacitor plate. A second insulator is then deposited over the device and discrete openings etched therein to expose the insulation layer and first metal plate. Metal is deposited within the openings and planarized, thereby forming a contact to the first metal plate and the second metal plate of the capacitor.