公开(公告)号：US20100186512A1

公开(公告)日：2010-07-29

申请号：US12666869

申请日：2008-07-02

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

IPC分类号： G01N29/00 ,  H01L21/66

CPC分类号： H01L22/12 ,  G01N29/075 ,  G01N2291/02827 ,  G01N2291/0289

摘要： A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K. The ultrasonic generator 27 and the ultrasonic receiver 28 are each equipped with a transducer 30 including a thin film oscillator 31 formed from a high-polymer material with a physical property capable of following an expanding action of a silicon wafer 26 in association with a temperature drop in the above range of the temperatures and whose molecular axes are oriented in the direction of an electric field when decreasing temperature with the electric field applied thereto and further, including electrodes 32, 33 for applying an electric field to the thin film oscillator 31.

摘要翻译： 一种能够有效和定量地评估硅晶片中存在的原子空位的原子空位的定量评估装置和方法。 定量评价装置1配备有包括超声波发生器27和超声波接收器28的检测器5，在超声波发生器27和超声波接收器28上形成的硅样品6，该硅晶片26包括完美的晶体硅，磁力 用于向硅样品6施加外部磁场的发生器4，以及能够将硅样品6冷却并控制在低于或等于50K的温度范围内的冷却器3。 超声波发生器27和超声波接收器28均配备有换能器30，该换能器30包括由高分子材料形成的薄膜振荡器31，该高分子材料具有能够跟随硅晶片26的膨胀作用的物理特性， 在上述温度范围内，并且当施加电场而降低温度时，其分子轴在电场方向上取向，并且还包括用于向薄膜振荡器31施加电场的电极32,33。

公开(公告)号：US20090217866A1

公开(公告)日：2009-09-03

申请号：US12281624

申请日：2007-03-02

申请人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

发明人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

IPC分类号： C30B15/20

CPC分类号： C30B15/203 ,  C30B29/06

摘要： A Si single crystal having no defect region is stably grown by clearly detecting a type of a defect region or a defect free region of Si single crystal grown at a certain pulling rate profile and feeding back the data to the subsequent pulling. In the production of Si single crystal ingot by a CZ method, a concentration distribution of atomic vacancy in a cross-section of a precedent grown Si single crystal is detected by the direct observation method of atomic vacancy and then fed back to the subsequent pulling treatment to adjust a pulling rate profile of the subsequent pulling.

摘要翻译： 通过清楚地检测出以特定的拉伸速率曲线生长的Si单晶的缺陷区域或无缺陷区域的类型，并将数据反馈到随后的拉伸，稳定地生长没有缺陷区域的Si单晶。 在通过CZ法制造Si单晶锭时，通过原子空位的直接观察法检测先前生长的Si单晶的横截面中原子空位的浓度分布，然后反馈到随后的拉拔处理 以调整随后拉动的拉力曲线。

公开(公告)号：US20090064786A1

公开(公告)日：2009-03-12

申请号：US12281623

申请日：2007-03-02

申请人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

发明人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

IPC分类号： G01N29/07

CPC分类号： G01N29/07 ,  G01N29/041 ,  G01N29/2437 ,  G01N29/343 ,  G01N2291/02881 ,  G01N2291/2698

摘要： There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means 2 for applying an external magnetic field to a silicon sample 5 cut out from a given site of a silicon wafer, a temperature controlling means 3 capable of cooling the silicon sample 5 to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means 4 for oscillating ultrasonic pulse to the surface of the silicon sample 5 and propagating the oscillated ultrasonic pulse into the silicon sample 5 and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer 8 having properties capable of following to an expansion of the silicon sample 5 at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample 5.

摘要翻译： 提供了存在于硅晶片中的原子空位的定量评估装置等，其中可以通过在硅样品的表面上形成合理的薄膜换能器来定量评估硅晶片中的原子空位浓度，而不进行 加速处理提高浓度。 其特征在于包括：磁力产生装置2，用于将外部磁场施加到从硅晶片的给定位置切出的硅样品5;温度控制装置3，其能够将硅样品5冷却至 不超过50K的超声波振荡检测装置4，用于将超声脉冲振荡到硅样品5的表面，并将振荡的超声波脉冲传播到硅样品5中，并检测传播的超声脉冲中的声速变化，其中 在硅样品5的表面上直接形成具有能够跟随在上述温度区域的硅样品5膨胀并且基本上沿给定方向对准C轴的性质的薄膜换能器8。

公开(公告)号：US08578777B2

公开(公告)日：2013-11-12

申请号：US13394705

申请日：2010-08-19

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

IPC分类号： G01N29/07

CPC分类号： H01L22/12

摘要： A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

摘要翻译： 通过该方法制造的定量评价方法，硅晶片的制造方法和硅晶片，能够更有效地评价硅晶片中存在的原子空位的浓度。 定量评价方法包括以下步骤：在将硅晶片（26）保持在恒定温度的同时将外部磁场施加到硅晶片（26）的状态下振荡，超声波脉冲并接收测量波 超声波脉冲后通过用于检测超声波脉冲和测量波脉冲之间的相位差的硅晶片（26）传播得到的脉冲; 并从相位差计算弹性常数。 改变外部磁场以计算对应于用于评估硅晶片（26）中的原子空位浓度的外部磁场变化的弹性常数。

公开(公告)号：US20120168912A1

公开(公告)日：2012-07-05

申请号：US13394705

申请日：2010-08-19

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto ,  Mitsuhiro Akatsu

IPC分类号： H01L29/36 ,  G01N27/72

CPC分类号： H01L22/12

摘要： A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).

摘要翻译： 通过该方法制造的定量评价方法，硅晶片的制造方法和硅晶片，能够更有效地评价硅晶片中存在的原子空位的浓度。 定量评价方法包括以下步骤：在将硅晶片（26）保持在恒定温度的同时将外部磁场施加到硅晶片（26）的状态下振荡，超声波脉冲并接收测量波 超声波脉冲后通过用于检测超声波脉冲和测量波脉冲之间的相位差的硅晶片（26）传播得到的脉冲; 并从相位差计算弹性常数。 改变外部磁场以计算对应于用于评估硅晶片（26）中的原子空位浓度的外部磁场变化的弹性常数。

公开(公告)号：US08215175B2

公开(公告)日：2012-07-10

申请号：US12666869

申请日：2008-07-02

申请人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

发明人： Terutaka Goto ,  Hiroshi Kaneta ,  Yuichi Nemoto

IPC分类号： G01N29/07

CPC分类号： H01L22/12 ,  G01N29/075 ,  G01N2291/02827 ,  G01N2291/0289

摘要： A quantitative evaluation device and method of an atomic vacancy, which are capable of efficiently and quantitatively evaluating an atomic vacancy existing in a silicon wafer. A quantitative evaluation device 1 is equipped with a detector 5 including an ultrasonic generator 27 and an ultrasonic receiver 28, a silicon sample 6 formed with the ultrasonic generator 27 and the ultrasonic receiver 28 on a silicon wafer 26 comprising perfect crystal silicon, a magnetic force generator 4 for applying an external magnetic field to the silicon sample 6, and a cooler 3 capable of cooling and controlling the silicon sample 6 to a range of temperatures lower than or equal to 50K. The ultrasonic generator 27 and the ultrasonic receiver 28 are each equipped with a transducer 30 including a thin film oscillator 31 formed from a high-polymer material with a physical property capable of following an expanding action of a silicon wafer 26 in association with a temperature drop in the above range of the temperatures and whose molecular axes are oriented in the direction of an electric field when decreasing temperature with the electric field applied thereto and further, including electrodes 32, 33 for applying an electric field to the thin film oscillator 31.

摘要翻译： 一种能够有效和定量地评估硅晶片中存在的原子空位的原子空位的定量评估装置和方法。 定量评价装置1配备有包括超声波发生器27和超声波接收器28的检测器5，在超声波发生器27和超声波接收器28上形成的硅样品6，该硅晶片26包括完美的晶体硅，磁力 用于向硅样品6施加外部磁场的发生器4，以及能够将硅样品6冷却并控制在低于或等于50K的温度范围内的冷却器3。 超声波发生器27和超声波接收器28均配备有换能器30，该换能器30包括由高分子材料形成的薄膜振荡器31，该高分子材料具有能够跟随硅晶片26的膨胀作用的物理特性， 在上述温度范围内，并且当施加电场而降低温度时，其分子轴在电场方向上取向，并且还包括用于向薄膜振荡器31施加电场的电极32,33。

公开(公告)号：US08037761B2

公开(公告)日：2011-10-18

申请号：US12281623

申请日：2007-03-02

申请人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

发明人： Terutaka Goto ,  Yuichi Nemoto ,  Hiroshi Kaneta ,  Masataka Hourai

IPC分类号： G01N29/07

CPC分类号： G01N29/07 ,  G01N29/041 ,  G01N29/2437 ,  G01N29/343 ,  G01N2291/02881 ,  G01N2291/2698

摘要： There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating means 2 for applying an external magnetic field to a silicon sample 5 cut out from a given site of a silicon wafer, a temperature controlling means 3 capable of cooling the silicon sample 5 to a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting means 4 for oscillating ultrasonic pulse to the surface of the silicon sample 5 and propagating the oscillated ultrasonic pulse into the silicon sample 5 and detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducer 8 having properties capable of following to an expansion of the silicon sample 5 at the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample 5.

摘要翻译： 提供了存在于硅晶片中的原子空位的定量评估装置等，其中可以通过在硅样品的表面上形成合理的薄膜换能器来定量评估硅晶片中的原子空位浓度，而不进行 加速处理提高浓度。 其特征在于包括：磁力产生装置2，用于将外部磁场施加到从硅晶片的给定位置切出的硅样品5;温度控制装置3，其能够将硅样品5冷却至 不超过50K的超声波振荡检测装置4，用于将超声脉冲振荡到硅样品5的表面，并将振荡的超声波脉冲传播到硅样品5中，并检测传播的超声脉冲中的声速变化，其中 在硅样品5的表面上直接形成具有能够跟随在上述温度区域的硅样品5膨胀并且基本上沿给定方向对准C轴的性质的薄膜换能器8。