公开(公告)号：US20240271317A1

公开(公告)日：2024-08-15

申请号：US18568227

申请日：2022-09-30

申请人： XI’AN ESWIN MATERIAL TECHNOLOGY CO., LTD.

发明人： Zhenliang SONG ,  Shaojie SONG

IPC分类号： C30B15/20 ,  C30B15/10 ,  C30B29/06

CPC分类号： C30B15/203 ,  C30B15/10 ,  C30B29/06

摘要： A crystal puller for pulling a single-crystal silicon ingot includes a cylindrical heating apparatus and a cylindrical cooling apparatus. The heating apparatus is located above a water cooling jacket, and is configured such that a single-crystal silicon ingot enters a heat treatment chamber defined by the heating apparatus to be heat-treated when the single-crystal silicon ingot moves upwardly in a vertical direction. The cooling apparatus is located above the heating apparatus, and is configured such that the heat-treated single-crystal silicon ingot enters a cooling chamber defined by the cooling apparatus to be cool-treated when the single-crystal silicon ingot continues moving upwardly in the vertical direction.

公开(公告)号：US20240247403A1

公开(公告)日：2024-07-25

申请号：US18289890

申请日：2022-06-22

申请人： XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY CO., LTD

发明人： Shuangli WANG ,  Chun-hung CHEN ,  Chenguang SUN

IPC分类号： C30B15/20 ,  C30B29/06

CPC分类号： C30B15/203 ,  C30B29/06

摘要： Provided are a method and apparatus for single crystal growth, and a single crystal. The method includes: determining a V/G window range that can produce a perfect crystal according to a V/G theory; obtaining a crystal growth rate V, and obtaining a range of a temperature gradient G at a solid-liquid interface for crystal growth; and obtaining a single crystal by determining a gap d or a crystal bar radius r according to the range of the temperature gradient G and a function F(d, r) of the gap d and the crystal bar radius r.

公开(公告)号：US11987901B2

公开(公告)日：2024-05-21

申请号：US17711691

申请日：2022-04-01

申请人： GlobalWafers Co., Ltd.

发明人： Pietro Valcozzena ,  Maria Porrini ,  Januscia Duchini

IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/04 ,  C30B15/14 ,  C30B15/20 ,  C30B29/66 ,  C30B25/10 ,  C30B25/20

CPC分类号： C30B29/06 ,  C30B15/007 ,  C30B15/04 ,  C30B15/14 ,  C30B15/203 ,  C30B29/66 ,  C30B25/10 ,  C30B25/20

摘要： Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.

公开(公告)号：US11959189B2

公开(公告)日：2024-04-16

申请号：US16839808

申请日：2020-04-03

申请人： GlobalWafers Co., Ltd.

发明人： Tapas Jain ,  Sumeet S. Bhagavat ,  Zheng Lu ,  Feng-Chien Tsai ,  Hong-Huei Huang

IPC分类号： C30B15/22 ,  C30B15/14 ,  C30B15/20 ,  C30B30/04

CPC分类号： C30B15/22 ,  C30B15/14 ,  C30B15/203 ,  C30B30/04

摘要： A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

公开(公告)号：US20230307505A1

公开(公告)日：2023-09-28

申请号：US18205886

申请日：2023-06-05

申请人： SUMCO CORPORATION

发明人： Kazuhisa TORIGOE ,  Toshiaki ONO ,  Shunya KAWAGUCHI

IPC分类号： H01L29/32 ,  H01L21/324 ,  C30B15/20 ,  H01L21/322 ,  C30B29/06 ,  C30B33/02

CPC分类号： H01L29/32 ,  H01L21/324 ,  C30B15/203 ,  H01L21/3225 ,  C30B29/06 ,  C30B33/02

摘要： A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.

公开(公告)号：US11708642B2

公开(公告)日：2023-07-25

申请号：US17372533

申请日：2021-07-12

申请人： GlobalWafers Co., Ltd.

发明人： Chun-Hung Chen ,  Hsing-Pang Wang ,  Wen-Ching Hsu ,  I-Ching Li

IPC分类号： C30B15/14 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/14 ,  C30B15/002 ,  C30B15/203 ,  C30B29/06 ,  Y10T117/1088

摘要： A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

公开(公告)号：US10072352B2

公开(公告)日：2018-09-11

申请号：US15327260

申请日：2015-07-10

申请人： SK SILTRON CO., LTD.

发明人： Do Yeon Kim ,  Il Soo Choi ,  Yun Ha An

IPC分类号： C30B15/04 ,  C30B15/20 ,  C30B15/00 ,  C30B15/02 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B15/203 ,  C30B15/00 ,  C30B15/02 ,  C30B15/04 ,  C30B15/14 ,  C30B29/06

摘要： An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. The auxiliary heat shield part can reduce a deviation of a temperature gradient in the body part, whereby increasing the distribution of a defect-free zone in the body part.

公开(公告)号：US10036100B2

公开(公告)日：2018-07-31

申请号：US15112653

申请日：2015-02-03

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Takahiro Yanagimachi ,  Masahiro Akiba ,  Junya Tokue ,  Susumu Sonokawa

IPC分类号： C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  C30B15/22

CPC分类号： C30B15/203 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22 ,  C30B29/06

摘要： An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

公开(公告)号：US20180108538A1

公开(公告)日：2018-04-19

申请号：US15564952

申请日：2016-04-21

申请人： SUMCO CORPORATION

发明人： Tomokazu KATANO

IPC分类号： H01L21/322 ,  C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  C30B25/18 ,  H01L21/02 ,  H01L29/16 ,  H01L29/34 ,  B28D1/08

CPC分类号： H01L21/3225 ,  B28D1/08 ,  C30B15/00 ,  C30B15/203 ,  C30B25/18 ,  C30B29/06 ,  C30B33/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/16 ,  H01L29/34

摘要： A silicon single crystal is pulled up such that nitrogen concentration of the crystal is 1×1011 to 2×1013 atoms/cm3, the crystal cooling rate is about 4.2° C./min at a temperature of a silicon melting point to 1350° C. and is about 3.1° C./min at a temperature of 1200° C. to 1000° C., and oxygen concentration of a wafer is 9.5×1017 to 13.5×1017 atoms/cm3. After a heat treatment is performed on the wafer sliced from the silicon single crystal in a treatment condition of 875° C. for about 30 min, growth of an epitaxial layer is caused. Thus, an epitaxial wafer in which the number of epitaxial defects is not increased while maintaining predetermined oxygen concentration and slips do not occur is produced.

公开(公告)号：US20170283980A1

公开(公告)日：2017-10-05

申请号：US15324856

申请日：2015-04-08

申请人： SUMCO CORPORATION

发明人： Yasuhito NARUSHIMA ,  Masayuki UTO ,  Toshimichi KUBOTA

IPC分类号： C30B15/04 ,  C30B15/22 ,  C23C16/24 ,  C30B25/20 ,  C23C16/02 ,  C30B29/06 ,  C30B33/02

CPC分类号： C30B15/04 ,  C23C16/0209 ,  C23C16/24 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  C30B25/02 ,  C30B25/20 ,  C30B29/06 ,  C30B33/02

摘要： A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees C. or more.