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    Method for producing a conductive nanoparticle memory device
    2.
    发明授权
    Method for producing a conductive nanoparticle memory device 失效
    导电纳米颗粒存储装置的制造方法

    公开(公告)号：US08389368B2

    公开(公告)日：2013-03-05

    申请号：US12727593

    申请日：2010-03-19

    申请人： Simon Deleonibus ,  Jean-Marie Basset ,  Paul Campbell ,  Thibaut Gutel ,  Paul-Henri Haumesser ,  Gilles Marchand ,  Catherine Santini

    发明人： Simon Deleonibus ,  Jean-Marie Basset ,  Paul Campbell ,  Thibaut Gutel ,  Paul-Henri Haumesser ,  Gilles Marchand ,  Catherine Santini

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66833 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/28273 ,  H01L27/11563 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S977/773

    摘要： A method for producing a memory device with nanoparticles, including steps of: a) forming, in a substrate based on at least one semi-conductor, source and drain regions, and at least one first dielectric on at least one zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) depositing of at least one ionic liquid that is an organic salt or mixture of organic salts in a liquid state, wherein nanoparticles of at least one electrically conductive material are suspended in the ionic liquid, said ionic liquid covering at least said first dielectric, c) forming a deposition of said nanoparticles at least on said first dielectric, d) removing the ionic liquid remaining on the first dielectric, and e) forming at least one second dielectric and at least one control gate on at least one part of the nanoparticles deposited on the first dielectric.

    摘要翻译： 一种制备具有纳米颗粒的存储器件的方法，包括以下步骤：a）在基板中基于至少一个半导体源极和漏极区域形成基底，并且至少一个第一电介质在衬底的至少一个区域上被布置 在源极和漏极区之间并且旨在形成存储器件的通道，b）沉积至少一种离子液体，其是液态的有机盐或有机盐的混合物，其中至少一种导电材料的纳米颗粒 悬浮在离子液体中，所述离子液体至少覆盖所述第一电介质，c）至少在所述第一电介质上形成所述纳米颗粒的沉积，d）去除残留在第一电介质上的离子液体，和e）至少形成 在沉积在第一电介质上的纳米颗粒的至少一部分上的一个第二电介质和至少一个控制栅极。