公开(公告)号：US4376796A

公开(公告)日：1983-03-15

申请号：US315572

申请日：1981-10-27

申请人： Robert D. Arrasmith ,  Thomas R. Barnhart ,  Jon C. Goldman

发明人： Robert D. Arrasmith ,  Thomas R. Barnhart ,  Jon C. Goldman

IPC分类号： C01B33/02 ,  H01L21/316

CPC分类号： H01L21/02238 ,  H01L21/31662 ,  Y10S438/909 ,  Y10S438/935

摘要： At atmosphere X and an atmosphere Y, which may be an oxidizing atmosphere, are used in a process wherein silicon wafers are processed in a processing chamber, which is pressurized sequentially with a purging atmosphere, with the atmosphere X, and with the atmosphere Y displacing the atmosphere X excpet for a residual portion remaining with the atmosphere X and diminishing in concentration with time. As the atmosphere X has a molecular weight approximating the molecular weight of the atmosphere Y, stratification is minimized. If the atmosphere Y is steam, the atmosphere X may be a premixture of helium and oxyen.

摘要翻译： 在气氛X和可能是氧化性气氛的气氛Y中，使用硅晶片在用气氛X与依次用吹扫气氛依次加压的处理室中进行处理，气氛Y置换 气氛X排出剩余部分残留气氛X并随时间减少浓度。 由于气氛X具有接近气氛Y的分子量的分子量，所以分层被最小化。 如果气氛Y是蒸汽，气氛X可以是氦和氧气的预混物。