摘要:
A top-emitting organic electroluminescent device and a manufacturing method thereof are provided. The device comprises a substrate (101), an anode layer (102), a hole-injecting layer (103), a hole-transporting layer (104), a light-emitting layer (105), an electron-transporting layer (106), an electron-injecting layer (107), and a cathode layer (108), which are stacked in order. The cathode layer (108) comprises an aluminum layer (1081) and a composite thin film (1082), which consists of Ag and SiO. The aluminum layer (1081) is deposited on the electron-injecting layer (107), and the composite thin film (1082) is deposited on the aluminum layer (1081). The cathode layer (108) has a composite-layer structure consisting of the Ag and the SiO, so the light transmittance of the device is enhanced, and the emission efficiency of the device can be improved.
摘要:
A titanium doped ternary system silicate film is provided, wherein the titanium doped ternary system silicate film has the general formula, of Ca2-xMgSi2O7:xTi4+, where x has a value of 0.00017˜0.0256. The preparation method of the titanium doped tenuity system silicate film and the application of the titanium doped ternary system ,silicate film obtained by the method in field emission de ices cathode my tubes and/or electroluminescent devices are also provided.
摘要:
Disclosed are a double-sided luminescent organic light emitting device and the manufacturing method thereof. The double-sided luminescent organic light emitting device comprises a transparent substrate (21), an anode (22), a transparent cathode (25), and at least two organic light emitting structures (23a, 23b) and at least a charge-generation layer (24) set between the anode (22) and the transparent cathode (25), and the charge-generation layer (24) is set between the two neighboring organic light emitting structures (23a, 23b), the charge-generation layer (24) and the organic light emitting structures (23a, 23b) are alternately arranged. The charge-generation layer (24) includes an n-type semiconductor layer (241) and a p-type semiconductor (242) layer combined with the n-type semiconductor layer. Said double-sided light emitting organic light emitting device requires low driving current, and has high luminescence efficiency, high brightness, and high light extraction efficiency. In addition, said device enables nearly 360 degrees omnidirectional illumination, enlarges the illumination area and the application range, and has long lifetime, simple preparation procedures and low production cost.
摘要:
Disclosed are a double-sided luminescent organic light emitting device and the manufacturing method thereof. The double-sided luminescent organic light emitting device comprises a transparent substrate (21), an anode (22), a transparent cathode (25), and at least two organic light emitting structures (23a, 23b) and at least a charge-generation layer (24) set between the anode (22) and the transparent cathode (25), and the charge-generation layer (24) is set between the two neighboring organic light emitting structures (23a, 23b), the charge-generation layer (24) and the organic light emitting structures (23a, 23b) are alternately arranged. The charge-generation layer (24) includes an n-type semiconductor layer (241) and a p-type semiconductor (242) layer combined with the n-type semiconductor layer. Said double-sided light emitting organic light emitting device requires low driving current, and has high luminescence efficiency, high brightness, and high light extraction efficiency. In addition, said device enables nearly 360 degrees omnidirectional illumination, enlarges the illumination area and the application range, and has long lifetime, simple preparation procedures and low production cost.