公开(公告)号：US08331142B2

公开(公告)日：2012-12-11

申请号：US12970744

申请日：2010-12-16

申请人： Dieter Bimberg ,  Martin Geller ,  Andreas Marent ,  Tobias Nowozin

发明人： Dieter Bimberg ,  Martin Geller ,  Andreas Marent ,  Tobias Nowozin

IPC分类号： G11C11/34 ,  H01L29/68

CPC分类号： B82Y10/00 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/803

摘要： An embodiment of the invention relates to a memory comprising a strained double-heterostructure having an inner semiconductor layer which is sandwiched between two outer semiconductor layers, wherein the lattice constant of the inner semiconductor layer differs from the lattice constants of the outer semiconductor layers, the resulting lattice strain in the double-heterostructure inducing the formation of at least one quantum dot inside the inner semiconductor layer, said at least one quantum dot being capable of storing charge carriers therein, and wherein, due to the lattice strain, the at least one quantum dot has an emission barrier of 1.15 eV or higher, and provides an energy state density of at least three energy states per 1000 nm3, all said at least three energy states being located in an energy band of 50 meV or less.

摘要翻译： 本发明的一个实施例涉及包含应变双异质结构的存储器，其具有夹在两个外半导体层之间的内半导体层，其中内半导体层的晶格常数与外半导体层的晶格常数不同， 所述双异质结构中的晶格应变导致在所述内半导体层内部形成至少一个量子点，所述至少一个量子点能够在其中存储电荷载流子，并且其中由于晶格应变，所述至少一个 量子点具有1.15eV或更高的发射势垒，并且提供每1000nm 3至少三个能量状态的能态状态密度，所有所述至少三个能态位于50meV或更小的能带内。

公开(公告)号：US20120155165A1

公开(公告)日：2012-06-21

申请号：US12970744

申请日：2010-12-16

申请人： Dieter BIMBERG ,  Martin Geller ,  Andreas Marent ,  Tobias Nowozin

发明人： Dieter BIMBERG ,  Martin Geller ,  Andreas Marent ,  Tobias Nowozin

IPC分类号： H01L29/68 ,  G11C11/34 ,  H01L29/778 ,  H01L29/66

CPC分类号： B82Y10/00 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/803

摘要： An embodiment of the invention relates to a memory comprising a strained double-heterostructure having an inner semiconductor layer which is sandwiched between two outer semiconductor layers, wherein the lattice constant of the inner semiconductor layer differs from the lattice constants of the outer semiconductor layers, the resulting lattice strain in the double-heterostructure inducing the formation of at least one quantum dot inside the inner semiconductor layer, said at least one quantum dot being capable of storing charge carriers therein, and wherein, due to the lattice strain, the at least one quantum dot has an emission barrier of 1.15 eV or higher, and provides an energy state density of at least three energy states per 1000 nm3, all said at least three energy states being located in an energy band of 50 meV or less.

摘要翻译： 本发明的一个实施例涉及包含应变双异质结构的存储器，其具有夹在两个外半导体层之间的内半导体层，其中内半导体层的晶格常数与外半导体层的晶格常数不同， 所述双异质结构中的晶格应变导致在所述内半导体层内部形成至少一个量子点，所述至少一个量子点能够在其中存储电荷载流子，并且其中由于晶格应变，所述至少一个 量子点具有1.15eV或更高的发射势垒，并且提供每1000nm 3至少三个能量状态的能态状态密度，所有所述至少三个能态位于50meV或更小的能带内。