公开(公告)号：US5851924A

公开(公告)日：1998-12-22

申请号：US763013

申请日：1996-12-11

申请人： Atsuo Nakazawa ,  Yuuichirou Mukai ,  Tomoaki Tajiri

发明人： Atsuo Nakazawa ,  Yuuichirou Mukai ,  Tomoaki Tajiri

IPC分类号： H01L21/304 ,  H01L21/322 ,  H01L21/302

CPC分类号： H01L21/02013 ,  H01L21/02024 ,  Y02P80/30 ,  Y10S438/928 ,  Y10S438/974

摘要： A method for fabricating a semiconductor wafer to reduce the number of processing steps and produce low-cost wafers in a short time is disclosed. The method involves surface grinding both the front surface and back surface of a single-crystal silicon wafer which has been sliced from a rod and chamfered. In the surface grinding step, the size numbers of abrasive grains are larger than #2000 for front surface grinding, and smaller than #600 for back surface grinding. The front surface is then chemical polished as a mirror surface which satisfies the requirement of a later photolithography step. Moreover, a deformation layer formed on the back surface of the semiconductor wafer is partially etched and left to provide an extrinsic gettering function. An epitaxial layer can be formed on the front surface to make the wafer an epitaxial wafer. The method of the present invention requires fewer process steps as compared with conventional methods, thereby reducing manufacturing time and cost.

摘要翻译： 公开了一种用于制造半导体晶片以减少处理步骤数量并在短时间内生产低成本晶片的方法。 该方法包括对已经从棒切割并倒角的单晶硅晶片的表面和表面进行表面研磨。 在表面研磨工序中，磨粒的尺寸数大于前表面研磨的＃2000，后表面磨削小于＃600。 然后将前表面进行化学抛光，作为满足后续光刻步骤要求的镜面。 此外，形成在半导体晶片的背面上的变形层被部分蚀刻并留下以提供外在吸气功能。 可以在前表面上形成外延层，以使晶片成为外延晶片。 与常规方法相比，本发明的方法需要更少的工艺步骤，从而减少制造时间和成本。

公开(公告)号：US20090156101A1

公开(公告)日：2009-06-18

申请号：US12371320

申请日：2009-02-13

申请人： Masamitsu Kitahashi ,  Toshiyuki Kamei ,  Hidetoshi Takeda ,  Hiroyuki Tokunaga ,  Tomoaki Tajiri

发明人： Masamitsu Kitahashi ,  Toshiyuki Kamei ,  Hidetoshi Takeda ,  Hiroyuki Tokunaga ,  Tomoaki Tajiri

IPC分类号： B24B1/00 ,  B24B41/06

CPC分类号： B24B37/30

摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。

公开(公告)号：US20090311862A1

公开(公告)日：2009-12-17

申请号：US12456355

申请日：2009-06-15

申请人： Tomoaki Tajiri ,  Daisuke Maruoka

发明人： Tomoaki Tajiri ,  Daisuke Maruoka

IPC分类号： H01L21/302

CPC分类号： H01L21/02008

摘要： By removing residual mechanical stress generated during processing, wafers can be manufactured while suppressing deformation and cracking of the wafer even if the wafer is a large-diameter wafer. A method for manufacturing a wafer, includes: a slicing step (S10) for slicing an ingot to obtain a wafer; a double-sided simultaneous grinding step (S20) for roughly grinding the cut surfaces of each wafer; a chamfering step (S22) for chamfering the edge portion of the wafer; a double-sided simultaneous processing step for simultaneously processing both faces of the wafer so as to remove residual mechanical stress generated on the both faces thereof due to the slicing step and the double-sided grinding step; a single-sided finishing step for separately performing finishing processing on at least one face of the wafer; and a cleaning step for cleaning the wafer.

摘要翻译： 通过去除加工时产生的残余机械应力，即使晶片是大直径晶片，也可以制造晶片，同时抑制晶片的变形和破裂。 一种制造晶片的方法，包括：切片步骤（S10），用于切割锭以获得晶片; 用于粗磨每个晶片的切割表面的双面同时研磨步骤（S20）; 倒角步骤（S22），用于倒角晶片的边缘部分; 双面同时处理步骤，用于同时处理晶片的两个面，以便消除由于切片步骤和双面研磨步骤而在其两个面上产生的残余机械应力; 单面精加工步骤，用于在晶片的至少一个面分别进行精加工处理; 以及用于清洁晶片的清洁步骤。

公开(公告)号：US20060057942A1

公开(公告)日：2006-03-16

申请号：US10528287

申请日：2003-09-26

申请人： Masamitsu Kitahashi ,  Toshiyuki Kamei ,  Hidetoshi Takeda ,  Hiroyuki Tokunaga ,  Tomoaki Tajiri

发明人： Masamitsu Kitahashi ,  Toshiyuki Kamei ,  Hidetoshi Takeda ,  Hiroyuki Tokunaga ,  Tomoaki Tajiri

IPC分类号： B24B1/00

CPC分类号： B24B37/30

摘要： A polishing apparatus comprises a polishing plate (24), an abrasive cloth (25) attached to the surface of the polishing plate (24), a chuck (19) for holding and pressing one surface of a wafer (39) against the abrasive cloth (25), and a circular retaining ring (23) concentrically arranged on the periphery of the chuck (19). The retaining ring (23) is rotatable and vertically movable with respect to the chuck (19), and is pressed against the abrasive cloth (25) during the lapping step. The retaining ring (23) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

摘要翻译： 抛光装置包括抛光板（24），附着在抛光板（24）的表面上的研磨布（25），用于将晶片（39）的一个表面保持并压靠在研磨布上的卡盘（19） （25）和同心地布置在卡盘（19）的周边上的圆形保持环（23）。 保持环（23）可相对于卡盘（19）旋转并且可垂直移动，并且在研磨步骤期间被压靠在研磨布（25）上。 在最后的抛光步骤期间，保持环（23）被向上提升，从而防止研磨颗粒进入最终抛光阶段。 因此，可以使用相同的抛光头连续进行研磨和最终抛光。 利用这种结构，可以实现装置的成本削减，因为使用相同的抛光头连续进行研磨和最终抛光，而不将用于研磨的研磨颗粒带入最后的抛光阶段。