公开(公告)号：US20120097523A1

公开(公告)日：2012-04-26

申请号：US13266631

申请日：2010-04-27

申请人： Nobuyuki Mori ,  Hiroshi Yano ,  Toshiyuki Shiroishi ,  Takashi Ushida ,  Nobuhiro Shimizu ,  Noriyuki Takahashi ,  Toshihiro Mitsuzuka

发明人： Nobuyuki Mori ,  Hiroshi Yano ,  Toshiyuki Shiroishi ,  Takashi Ushida ,  Nobuhiro Shimizu ,  Noriyuki Takahashi ,  Toshihiro Mitsuzuka

IPC分类号： C01B33/037 ,  B01J19/08

CPC分类号： C01B33/037

摘要： [Objects] To improve productivity and reduce thermal energy consumption in manufacturing of high purity silicon as a raw material for metallurgical grade pure silicon.[Means to Solve]After conducting a first treatment of either removing boron by water-vapor added plasma arc heating or low-pressure oxygen plasma arc heating upon raw silicon contained in a hearth in a chamber to thereby putting the raw silicon into a high temperature molten state to thereby oxidizing and removing boron by evaporation, or removing phosphorus by electron beam irradiation to thereby putting the raw silicon into a high temperature molten state to thereby remove phosphorus by evaporation in an atmosphere suitable to the treatment; the atmosphere of the chamber is then changed to a vacuum atmosphere suitable to the remaining second treatment, while maintaining the silicon contained in the hearth in its molten state, and the second purification treatment is conducted; whereafter end(s) enriched in impurities is cut off by way of one-way coagulation method to obtain a high purity refined silicon ingot highly free from phosphorus, boron and other impurities.

摘要翻译： [对象]提高生产率，降低冶金级纯硅原料的高纯度硅制造中的热能消耗。 [解决方法]在室内的原料硅中，通过水蒸汽添加等离子体电弧加热或低压氧等离子体电弧加热进行第一次处理之后，将原料硅置于高温 从而通过蒸发氧化和除去硼，或通过电子束照射除去磷，从而将原料硅置于高温熔融状态，从而通过在适于处理的气氛中蒸发除去磷; 然后将室的气氛变成适合于剩余的第二处理的真空气氛，同时将包含在炉床中的硅保持在其熔融状态，并且进行第二净化处理; 然后通过单向凝结法切断富集杂质的末端，得到高度无磷，硼等杂质的高纯度精制硅锭。