公开(公告)号：US06992196B2

公开(公告)日：2006-01-31

申请号：US10227242

申请日：2002-08-26

申请人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

发明人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

IPC分类号： C07D327/10 ,  C07D343/00 ,  C07D411/00

CPC分类号： H01M10/0569 ,  C07D331/02 ,  H01M6/168 ,  H01M10/052 ,  H01M10/0567

摘要： Refined ethylene sulfite exhibits an excellent storage stability when used as a constituent of an electrolyte. A method of producing same has a step of reacting ethylene glycol and thionyl chloride to producing raw ethylene sulfite, a rectifying step for rectifying the raw ethylene sulfite, and a refining process for refining the raw ethylene sulfite or the rectified ethylene sulfite conducted before or after the rectifying step. The refining process is at least one process selected from the group consisting of a washing process, a dehydration process by total reflux distillation, a second rectifying process, and an absorbing process. Refined ethylene sulfite produced according to the method contains chloroethanol in an amount of not more than 1000 ppm.

摘要翻译： 当用作电解质的组分时，精制亚乙基亚硫酸盐显示出优异的储存稳定性。 其制造方法具有使乙二醇与亚硫酰氯反应生成亚乙基亚乙基酯的工序，将亚乙基亚油酸原料精馏的精馏工序，以及精炼前后的亚乙基亚乙基亚乙基酯或精制亚乙基亚乙基酯的精制工序 整改步骤。 精制方法是选自洗涤方法，通过全回流蒸馏的脱水方法，第二精馏方法和吸收方法中的至少一种方法。 根据该方法生产的精制亚乙基亚硫酸酯含有不超过1000ppm的氯乙醇。

公开(公告)号：US20050171378A1

公开(公告)日：2005-08-04

申请号：US11098373

申请日：2005-04-05

申请人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

发明人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

IPC分类号： C07D331/02 ,  H01M6/16 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/0569 ,  H01M10/36 ,  C07C309/00

CPC分类号： H01M10/0569 ,  C07D331/02 ,  H01M6/168 ,  H01M10/052 ,  H01M10/0567

摘要： Refined ethylene sulfite exhibits excellent storage stability when used as a constituent of an electrolyte. Ethylene sulfite is formed by a step of reacting ethylene glycol and thionyl chloride to producing raw ethylene sulfite, a rectifying step for rectifying the raw ethylene sulfite, and a refining process for refining the raw ethylene sulfite or the rectified ethylene sulfite conducted before or after the rectifying step. The refining process is at least one process selected from the group consisting of a washing process, a dehydration process by total reflux distillation, a second rectifying process, and an absorbing process. Refined ethylene sulfite contains chloroethanol in an amount of not more than 1000 ppm.

摘要翻译： 当用作电解质的组分时，精制的亚乙基亚硫酸酯显示出优异的储存稳定性。 亚硫酸亚乙酯是通过使乙二醇和亚硫酰氯反应生成亚乙基亚乙基酯，将亚乙基亚硫酸原料精馏的精馏步骤和精制亚硫酸亚乙酯或精馏的亚硫酸亚乙酯的精制方法， 整改步骤 精制方法是选自洗涤方法，通过全回流蒸馏的脱水方法，第二精馏方法和吸收方法中的至少一种方法。 精制亚乙基亚硫酸盐含有不大于1000ppm的氯乙醇。

公开(公告)号：US20050181286A1

公开(公告)日：2005-08-18

申请号：US11098742

申请日：2005-04-05

申请人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

发明人： Toshimitsu Kato ,  Norioki Mine ,  Minoru Kotato

IPC分类号： C07D331/02 ,  H01M6/16 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/0569 ,  H01M10/36

CPC分类号： H01M10/0569 ,  C07D331/02 ,  H01M6/168 ,  H01M10/052 ,  H01M10/0567

摘要： An electrolyte for a lithium battery contains ethylene sulfite, which includes chloroethanol in an amount of not more than 1000 ppm. A lithium battery includes an electrolyte, which contains chloroethanol in an amount of not more than 1000 ppm.

摘要翻译： 用于锂电池的电解液包含亚乙基亚硫酸盐，其包括不大于1000ppm的氯乙醇。 锂电池包括含有不大于1000ppm的氯乙醇的电解质。

公开(公告)号：US5163300A

公开(公告)日：1992-11-17

申请号：US760457

申请日：1991-09-17

申请人： Toshimitsu Kato ,  Hiroshi Oike

发明人： Toshimitsu Kato ,  Hiroshi Oike

IPC分类号： F25C1/10 ,  F25C1/04 ,  F25C5/04

CPC分类号： F25C5/04 ,  F25C1/04 ,  F25C2305/022

摘要： An automatic ice maker in an ice making compartment of a refrigerator includes an ice tray placed in the ice making compartment, a temperature sensing element for sensing the temperture of the ice tray, an ice removing driver for driving the ice tray so that ice is removed from it, and a controller for controlling the ice removing driver. The controller initiates one or more timing operations when the temperature sensed by the temperature sensing element falls to or below one of a plurality of set temperatures. When one of these timing operations runs to completion, the system determines that the ice making operation has been completed. The time period corresponding to each set temperature decreases with decreasing set temperatures.

摘要翻译： 冰箱的制冰室中的自动制冰机包括放置在制冰室中的冰盘，用于感测冰盘温度的温度检测元件，用于驱动冰盘以除去冰的除冰驱动器 以及用于控制除冰驱动器的控制器。 当温度感测元件检测到的温度降到或低于多个设定温度之一时，控制器启动一个或多个定时操作。 当其中一个定时运行完成时，系统确定制冰操作已经完成。 对应于每个设定温度的时间段随着设定温度的降低而降低。

公开(公告)号：US07102869B2

公开(公告)日：2006-09-05

申请号：US10661367

申请日：2003-09-12

申请人： Toshimitsu Kato ,  Masaru Yumura ,  Yoshiaki Aizawa

发明人： Toshimitsu Kato ,  Masaru Yumura ,  Yoshiaki Aizawa

IPC分类号： H01H47/24

CPC分类号： H03K17/785 ,  H03K17/04123

摘要： An optical semiconductor relay comprises a light emitting element converting an electrical signal into an optical signal, a first photodiode array receiving the optical signal from the light emitting element. The first photodiode array converts the optical signal into an electrical signal. The relay is further provided with a first diode having one electrode connected to one end of the first photodiode array and a MOSFET. The MOSFET has a gate terminal connected to other electrode of the first diode, and a source terminal connected to other end of the first photodiode array. A second photodiode array is arranged to receive the optical signal from the light emitting element. The second photodiode array converts the optical signal into an electrical signal and has both ends connected to the respective electrodes of the first diode. A control circuit connected between the gate and source terminals of the MOSFET.

摘要翻译： 光学半导体继电器包括将电信号转换为光信号的发光元件，从光发射元件接收光信号的第一光电二极管阵列。 第一光电二极管阵列将光信号转换成电信号。 继电器还设置有第一二极管，其具有连接到第一光电二极管阵列的一端的一个电极和MOSFET。 MOSFET具有连接到第一二极管的另一个电极的栅极端子和连接到第一光电二极管阵列的另一端的源极端子。 第二光电二极管阵列被布置成从发光元件接收光信号。 第二光电二极管阵列将光信号转换成电信号，并且其两端连接到第一二极管的相应电极。 连接在MOSFET的栅极和源极端子之间的控制电路。

公开(公告)号：US20050012114A1

公开(公告)日：2005-01-20

申请号：US10860509

申请日：2004-06-04

申请人： Hiromi Tada ,  Yoshiaki Aizawa ,  Toshimitsu Kato

发明人： Hiromi Tada ,  Yoshiaki Aizawa ,  Toshimitsu Kato

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/78 ,  H01L31/0328

CPC分类号： H01L29/7824 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7809

摘要： An up-drain type MOSFET device is formed in a limited n+ diffusion region used for an up-drain structure with the reduction of increase in a chip area which would otherwise be required for such device. Trench 112 is made separately from device regions provided in n−-type exitaxial layer 101. Trench 112 reaches to n+ implanted layer 111 while deeply diffused n+ region 110 is formed along a sidewall of trench 112 by applying slant implantation thereby to form an up-drain structure.

摘要翻译： 在用于上行排列结构的有限的n +扩散区域中形成上溢型MOSFET器件，随着芯片面积的增加减少，否则这种器件将需要这种MOSFET。 沟槽112与设置在n型离子层101中的器件区域分开制成。沟槽112到达n +注入层111，而沿沟槽112的侧壁形成深度扩散的n +区110， 倾斜植入，从而形成上溢结构。