公开(公告)号：US5643827A

公开(公告)日：1997-07-01

申请号：US358977

申请日：1994-12-19

申请人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

发明人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/305 ,  H01L33/025 ,  Y10S438/955

摘要： A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.

摘要翻译： 一种GaP发光元件基板，其包括在通过形成n型GaP缓冲器构成的多层GaP基板上依次层叠的n型GaP层，氮掺杂n型GaP层和p型GaP层 其中n型GaP缓冲层中的硫（S）浓度为5×10 16 [原子/ cc]以下。 其制造方法如下：在n型GaP单晶衬底上形成n型GaP缓冲层，以制备多层GaP衬底，然后将n型GaP层，氮掺杂 n型GaP层和p型GaP层通过熔融回归法层叠在所述多层GaP衬底上，以获得GaP发光元件衬底，其中所述n型GaP层中的硫（S）浓度 当制备多层GaP衬底时，GaP缓冲层为5×10 16 [原子/ cc]以下。