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    PROCESS FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE
    1.
    发明公开
    PROCESS FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE 审中-公开

    公开(公告)号：US20230369541A1

    公开(公告)日：2023-11-16

    申请号：US18360572

    申请日：2023-07-27

    申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

    发明人： Carole Pernel ,  Amélie Dussaigne

    IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L33/12

    CPC分类号： H01L33/305 ,  H01L33/0075 ,  H01L33/12

    摘要： A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.

    Process for manufacturing a relaxed GaN/InGaN structure
    2.
    发明授权
    Process for manufacturing a relaxed GaN/InGaN structure 有权

    公开(公告)号：US11749779B2

    公开(公告)日：2023-09-05

    申请号：US17123267

    申请日：2020-12-16

    申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

    发明人： Carole Pernel ,  Amélie Dussaigne

    IPC分类号： H01L33/30 ,  H01L33/00 ,  H01L33/12

    CPC分类号： H01L33/305 ,  H01L33/0075 ,  H01L33/12

    摘要： A process comprising the following steps of: a) providing a device comprising: a GaN/InGaN structure comprising an electrically conductive doped GaN layer locally covered with InGaN mesas comprising a doped InGaN layer and an undoped or weakly doped InGaN layer, an electrically insulating layer covering the electrically conductive doped GaN layer between the mesas, b) connecting the electrically conductive doped GaN layer and a counter-electrode (500) to a voltage or current generator, c) dipping the device and the counter-electrode into an electrolyte solution, d) applying a voltage or current between the electrically conductive doped GaN layer and the second electrode to porosify the doped InGaN layer, e) forming an InGaN layer by epitaxy on the InGaN mesas, whereby a relaxed epitaxially grown InGaN layer is obtained.

    SEMICONDUCTOR DEVICE COMPRISING ELECTRON BLOCKING LAYER
    5.
    发明公开
    SEMICONDUCTOR DEVICE COMPRISING ELECTRON BLOCKING LAYER 审中-公开

    公开(公告)号：US20230144521A1

    公开(公告)日：2023-05-11

    申请号：US18094185

    申请日：2023-01-06

    申请人： EPISTAR CORPORATION

    发明人： Chia-Ming LIU ,  Chang-Hua HSIEH ,  Yung-Chung PAN ,  Chang-Yu TSAI ,  Ching-Chung HU ,  Ming-Pao CHEN ,  Chi SHEN ,  Wei-Chieh LIEN

    IPC分类号： H01L33/26 ,  H01L33/14 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

    CPC分类号： H01L33/26 ,  H01L33/145 ,  H01L33/06 ,  H01L33/305 ,  H01L33/325

    摘要： A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.