公开(公告)号：US06429701B2

公开(公告)日：2002-08-06

申请号：US09745735

申请日：2000-12-26

申请人： Toshiro Karaki ,  Kraisorn Throngnumchai

发明人： Toshiro Karaki ,  Kraisorn Throngnumchai

IPC分类号： H03K300

CPC分类号： H03K17/166

摘要： In the initial stage of the operation of turning off a semiconductor device, the impedance of a carrier pull out circuit remains low for rapidly pulling out the stored carriers from the control electrode of the device. When the turn-off transition of the device proceeds and becomes close to its completion, the impedance of the carrier pull out circuit is shifted to a higher level for retarding the carrier pull out speed. A detector is provided for detecting a control current developed by pulling out the carriers. When the current measured by the detector drops down to below a predetermined level, it is judged that the turn-off transition is approaching to its end. This permits the turn-off transition to be smoothly finished and can thus prevent unwanted oscillation of the control electrode voltage. More specifically, the device can be inhibited from being accidentally turned on by the effect of oscillation of the control electrode voltage and also, the decay time in the turn off transition becomes longer while the storage time is same as the conventional circuitry.

摘要翻译： 在关闭半导体器件的操作的初始阶段，载体拉出电路的阻抗保持较低，以便从器件的控制电极快速拉出存储的载流子。 当设备的关断转换进行并且接近其完成时，载波拉出电路的阻抗被转移到更高的电平以延迟载波拉出速度。 提供检测器，用于检测通过拉出载体而产生的控制电流。 当由检测器测量的电流下降到低于预定水平时，判断关断转换接近其结束。 这允许关断转换平稳地完成，并且因此可以防止控制电极电压的不期望的振荡。 更具体地，可以通过控制电极电压的振荡的影响来禁止装置意外接通，并且在关闭转换期间的衰减时间变长，同时存储时间与常规电路相同。

公开(公告)号：US6104075A

公开(公告)日：2000-08-15

申请号：US047441

申请日：1998-03-25

申请人： Toshiro Karaki

发明人： Toshiro Karaki

IPC分类号： G01K7/01 ,  G01K7/22 ,  H01L21/822 ,  H01L27/04 ,  H01L31/58

CPC分类号： G01K7/226 ,  G01K7/01

摘要： A polysilicon gate layer, a first n.sup.+ diffusion region serving as a drain region, and a second n.sup.+ diffusion region serving as a source region form a MOSFET, and then an operating point of the MOSFET is set into its saturation region by connecting a gate layer and a drain region of the MOSFET. The first and second n.sup.+ diffusion regions provide a first and a second leakage paths, respectively. A temperature sensor can be provided by use of the event that a leakage current flowing through the second leakage path is varied according to a substrate temperature. According to such configuration, scatter of detected temperatures due to scattering in manufacturing process can be reduced even if all scattering parameters in manufacturing process are considered. In addition, an required area of the temperature sensor can be made smaller since a high resistance value is not needed.

摘要翻译： 多晶硅栅极层，用作漏极区域的第一n +扩散区域和用作源极区域的第二n +扩散区域形成MOSFET，然后通过连接栅极层将MOSFET的工作点设置为其饱和区域 和MOSFET的漏极区域。 第一和第二n +扩散区域分别提供第一和第二泄漏路径。 可以通过使流过第二泄漏路径的漏电流根据衬底温度而变化的事件来提供温度传感器。 根据这样的结构，即使考虑了制造工序中的所有散射参数，也能够降低由于制造工序中的散射引起的检测温度的散射。 此外，由于不需要高电阻值，因此可以使温度传感器的所需面积更小。

公开(公告)号：US06203589B1

公开(公告)日：2001-03-20

申请号：US09415496

申请日：1999-10-12

申请人： Hitoshi Ohmori ,  Nobuhide Itoh ,  Toshio Kasai ,  Toshiro Karaki-Doy ,  Kenichiro Horio ,  Toshiaki Uno ,  Masayuki Ishii

发明人： Hitoshi Ohmori ,  Nobuhide Itoh ,  Toshio Kasai ,  Toshiro Karaki-Doy ,  Kenichiro Horio ,  Toshiaki Uno ,  Masayuki Ishii

IPC分类号： B24D334

CPC分类号： B24B53/001 ,  B24D3/06 ,  B24D3/28 ,  B24D3/34 ,  B24D18/0009

摘要： The method disclosed here comprises the steps of (a) mixing metal powder, a resin, abrasive grains, and a solid reducing agent at the normal (room) temperature through the melting point of the reducing agent to form a mixture and (b) molding and baking the mixture at the melting point of the reducing agent through that of the metal powder. The solid reducing agent is a fatty acid, preferably stearic acid having a volume ratio of 5 to 20% with respect to the metal powder. With is, it is possible to make metal-resin bond grindstones that give such high-quality mirror surfaces that have conductivity fit for ELID grinding and are not liable to have chippings or scratches and also have an Rmax value of approximately 3 nm or less.

摘要翻译： 本文公开的方法包括以下步骤：（a）在正常（室温）下通过还原剂的熔点混合金属粉末，树脂，磨料颗粒和固体还原剂以形成混合物，和（b）成型 并在还原剂的熔点下通过金属粉末的混合物进行烧成。 固体还原剂是脂肪酸，优选相对于金属粉末体积比为5〜20％的硬脂酸。 也就是说，可以制造具有导电性适合于ELID研磨并且不易产生切屑或划痕并且还具有大约3nm或更小的Rmax值的这种高质量镜面的金属 - 树脂粘结砂轮。

公开(公告)号：US06683777B2

公开(公告)日：2004-01-27

申请号：US09745734

申请日：2000-12-26

申请人： Yoshio Shimoida ,  Kraisorn Throngnumchai ,  Toshiro Karaki

发明人： Yoshio Shimoida ,  Kraisorn Throngnumchai ,  Toshiro Karaki

IPC分类号： H01H4732

CPC分类号： H03K17/0826 ,  H03K17/08126

摘要： A protective control unit for controlling a highside-output transistor and a lowside-output transistor connected in series is provided. The highside-output transistor has a first main electrode region connected to a power supply, a second main electrode region and a first control electrode. The lowside-output transistor has a third main electrode region connected to the second main electrode region, a fourth electrode region connected to ground and a second control electrode. And an inductive load is connected to a connecting point between the second and the third electrode regions. The protective control unit of the present invention has a highside-drive circuit. The highside-drive circuit pulls out charges stored in the highside-output transistor, through the first control electrode, during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. The charges are pulled out by short-circuiting between the first control electrode and the second main electrode region during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state. Or, the charges are pulled out by a providing a potential having an opposite polarity to the charges during the periods when the highside-output transistor is in the end of reverse conducting state and reverse recovery state.

摘要翻译： 提供了用于控制串联连接的高边输出晶体管和低边输出晶体管的保护控制单元。 高边输出晶体管具有连接到电源，第二主电极区域和第一控制电极的第一主电极区域。 低边输出晶体管具有连接到第二主电极区域的第三主电极区域，连接到地的第四电极区域和第二控制电极。 并且感性负载连接到第二和第三电极区域之间的连接点。 本发明的保护控制单元具有高侧驱动电路。 在高边输出晶体管处于反向导通状态和反向恢复状态的结束期间，高边驱动电路通过第一控制电极拉出存储在高边输出晶体管中的电荷。 在高边输出晶体管处于反向导通状态和反向恢复状态的结束期间，通过第一控制电极和第二主电极区域之间的短路来拉出电荷。 或者，通过在高边输出晶体管处于反向导通状态和反向恢复状态的结束期间提供与电荷具有相反极性的电位来拉出电荷。